SM1A24NSKP

SM1A24NSKP, Single MOSFET, N Channel, 100V, DFN5x6A-8_EP1

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Manufacturer: Sinopower
Product type: Single MOSFETs
Cfg.: N
BV(V): 100
Package: View
VGS (±V): 20
VTH(V) typ.: 2
ID (A) TA=25: 4.3
ID (A) TC=25: 10
Rg (Ω) typ.: 2.5
Ciss (pF) typ.: 585
Coss (pF) typ.: 36
Crss (pF) typ.: 20
Tape & Reel: View
Quality Report: View
RON(mΩ max) 10V max.: 126
RON(mΩ max) 4.5V max.: 143
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Datasheet
**SM1A24NSKP ®** N-Channel Enhancement Mode MOSFET 

## **Features** 

**Pin Description** 

- 100V/10A, 

- RDS(ON)= 126mΩ(max.) @ VGS= 10V 

- RDS(ON)= 143mΩ(max.) @ VGS= 4.5V 

- Reliable and Rugged 

- Lead Free and Green Devices Available (RoHS Compliant) 

## **Applications** 

- Power Management for Boost Converters. 

- Synchronous Rectifiers for SMPS. 

- LED Backlighting. 

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[D]<br>[D]<br>D [D]<br>[G]<br>[S]<br>S [S]<br>DFN5x6-8<br>( 5,6,7,8 )<br>D D D D<br>(4)<br>G<br>S S S<br>(1, 2, 3)<br>**----- End of picture text -----**<br>


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Pin 1<br>**----- End of picture text -----**<br>


N-Channel MOSFET 

## **Ordering and Marking Information** 

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SM1A24NS Package Code<br>     KP : DFN5x6-8<br>Operating Junction Temperature Range<br>Assembly Material<br>     C : -55  to 150  [o] C<br>Handling Code<br>Handling Code<br>Temperature Range<br>    TR : Tape & Reel (2500ea/reel)<br>Package Code Assembly Material<br>    G : Halogen and Lead Free Device<br>SM1A24NS  KP : SM1A24 XXXXX - Lot Code<br>XXXXX<br>|<br>Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate<br>termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-<br>free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER<br>defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight<br>in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).<br>**----- End of picture text -----**<br>


SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2013 

**SM1A24NSKP** 

## **®** sinopower VN 

**Absolute Maximum Ratings** (TA = 25°C Unless Otherwise Noted) 

|**Symbol**<br>~~a~~|**Parameter**<br>~~a~~|**Parameter**<br>~~a~~|**Rating**<br>~~a~~|**Unit**<br>~~a~~|
|---|---|---|---|---|
|**Common Ratings**<br>~~a~~|||||
|VDSS<br>~~————~~|Drain-Source Voltage<br>~~————~~||100<br>~~————~~|V<br>~~————~~|
|VGSS<br>~~————~~<br>~~a~~|Gate-Source Voltage<br>~~————~~||±20<br>~~————~~||
|TJ<br>~~a~~|Maximum Junction Temperature||150|°C|
|TSTG<br>~~a~~|Storage Temperature Range||-55 to 150||
|IS<br>~~a~~<br>~~a~~|Diode Continuous Forward Current|TC=25°C<br>~~eee~~|5<br>~~eee~~|A<br>~~eee~~|
|ID<br>~~a~~|Continuous Drain Current|TC=25°C<br>~~eee~~|10<br>~~eee~~|A<br>~~eee~~<br>|
|||TC=100°C<br>~~eee~~<br>~~a~~|6.3<br>~~eee~~<br>~~a~~||
|IDM<br>a<br>~~a~~|Pulsed Drain Current<br>|TC=25°C<br>~~eee~~<br><br>~~ee~~|20<br>~~eee~~<br><br>~~ee~~||
|PD<br>~~ee~~|Maximum Power Dissipation<br>~~ee~~|TC=25°C<br>~~ee~~<br>~~ee~~|26<br>~~ee~~<br>~~ee~~|W<br>~~ee~~|
|||TC=100°C<br>~~ee~~<br>~~ee~~<br>~~a~~|10<br>~~ee~~<br>~~ee~~<br>~~a~~||
|RθJC<br>~~a~~|Thermal Resistance-Junction to Case<br>~~ee~~<br>||4.8<br>~~ee~~<br><br>~~ol~~|°C/W<br><br>~~ol~~|
|ID<br>~~le~~|Continuous Drain Current<br>~~le~~|TA=25°C<br>~~le~~|4.3<br>~~le~~<br>~~ol~~|A<br>~~le~~<br>~~ol~~<br>~~a~~|
|||TA=70°C<br>~~le~~<br>~~a~~|3.5<br>~~le~~<br>~~ol~~<br>~~a~~||
|PD<br>~~a~~<br>~~Pop~~|Maximum Power Dissipation<br>~~a~~<br>~~Pop~~|TA=25°C<br>~~a~~|5<br>~~ol~~<br>~~a~~|W<br>~~ol~~<br>~~a~~<br>~~=~~|
|||TA=70°C<br>~~a~~<br>~~rr~~|3.2<br>~~ol~~<br>~~a~~<br>~~rr~~||
|RθJA<br>c<br>~~Pop~~<br>~~a~~|Thermal Resistance-Junction to Ambient<br>~~Pop~~|t≤10s<br>~~rr~~<br>~~rr~~|25<br>~~rr~~<br>~~ee~~|°C/W<br>~~=~~|
|||Steady State<br>~~rr~~<br>~~rr~~|60<br>~~rr~~<br>~~ee~~|°C/W<br>~~=~~|
|IAS<br>b<br>~~Pop~~<br>~~a~~|Avalanche Current, Single pulse<br>~~Pop~~|L=0.5mH<br>~~rr~~<br>~~rr~~|6<br>~~rr~~<br>~~ee~~|A<br>~~=~~|
|EAS<br>b<br>~~a~~|Avalanche Energy, Single pulse|L=0.5mH|9|mJ|



Note a：Pulse width limited by max. junction temperature. 

Note b：UIS tested and pulse width limited by maximum junction temperature 150[o] C (initial temperature Tj=25[o] C). Note c：Surface Mounted on 1in[2] pad area. 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2013 

## **SM1A24NSKP** 

## **®** sinopower VN 

## **Electrical Characteristics** (TA = 25°C Unless Otherwise Noted) 

|~~Rs~~||||||||
|---|---|---|---|---|---|---|---|
|**Symbol**<br>~~Rs~~|**Parameter**<br>|**Test Conditions**<br>||**Min.**<br>|**Typ.**<br>|**Max.**<br>|**Unit**<br>|
|**Static Characteristics**<br>~~Rs|~~||||||||
|BVDSS<br>~~|~~<br>~~a~~|Drain-Source Breakdown Voltage<br>~~|~~<br>~~a~~<br>~~ee~~|VGS=0V, IDS=250µA<br>~~|~~<br>~~a~~<br>~~ee~~||100<br>~~|~~<br>~~a~~<br>~~ee~~|-<br>~~|~~<br>~~a~~<br>~~ee~~|-<br>~~|~~<br>~~a~~<br>~~ee~~|V<br>~~|~~<br>~~a~~<br>~~ee~~|
|IDSS<br>~~ee~~<br>~~a~~|Zero Gate Voltage Drain Current<br>~~ee~~<br>|VDS=80V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~a~~||-<br>~~ee~~<br>~~ee~~|-<br>~~ee~~|1<br>~~ee~~|µA<br>~~ee~~|
||||TJ=85°C<br>~~ee~~<br>~~a~~|-<br>~~ee~~<br>~~ee~~|-<br>~~ee~~|30<br>~~ee~~||
|VGS(th)<br>~~a a~~|Gate Threshold Voltage<br>~~a~~|VDS=VGS, IDS=250µA<br>~~a ~~||1<br> ~~ee~~|2|3|V|
|IGSS|Gate Leakage Current|VGS=±20V, VDS=0V||-|-|±10|µA|
|RDS(ON)<br>d <br>~~pf~~|Drain-Source On-state Resistance<br>~~pf~~|VGS=10V, IDS=5A<br>~~tt~~||-<br>~~tt~~<br>~~ee~~|105<br>~~tt~~<br>~~ee~~|126<br>~~tt~~<br>~~ee~~|mΩ<br>~~ee~~|
|||VGS=4.5V, IDS=4A<br>~~tt~~<br>~~ee~~||-<br>~~tt~~<br>~~ee~~<br>~~ee~~|110<br>~~tt~~<br>~~ee~~<br>~~ee~~|143<br>~~tt~~<br>~~ee~~<br>~~ee~~|mΩ<br>~~ee~~<br>~~ee~~|
|**Diode Characteristics**<br>~~ee~~<br>~~ee ee~~<br>~~Cn~~||||||||
|VSD<br>d<br>~~aSS~~|Diode Forward Voltage<br>~~SS~~|ISD=5A, VGS=0V<br>~~ee~~||-<br>~~ee~~|0.8<br>~~ee~~|1.3<br>~~ee~~|V<br>~~ee~~|
|trr<br>~~SS~~|Reverse Recovery Time<br>~~SS~~|ISD=5A, dlSD/dt=100A/µs<br>~~ee~~<br>~~a~~||-<br>~~ee~~|27<br>~~ee~~|-<br>~~ee~~|ns<br>~~ee~~|
|Qrr<br>~~SS~~<br>~~a~~|Reverse Recovery Charge<br>~~SS~~<br>~~a~~|||-<br>~~ee~~<br>~~a~~<br>~~|~~|38<br>~~ee~~<br>~~a~~<br>~~|~~|-<br>~~ee~~<br>~~a~~<br>~~|~~|nC<br>~~ee~~<br>~~a~~<br>~~|~~|
|**Dynamic Characteristics**<br>e<br>~~SS~~<br>~~ee~~||||||||
|RG<br>~~a~~<br>~~ee~~|Gate Resistance<br>~~a~~|VGS=0V,VDS=0V,f=1MHz<br>~~a~~||-<br>~~a~~<br>~~Pf~~|2.5<br>~~a~~<br>~~Pf~~|-<br>~~a~~<br>~~Pf~~|Ω<br>~~a~~|
|Ciss<br>~~a~~<br>~~ee~~<br>~~ee~~|Input Capacitance<br>~~a~~|VGS=0V,<br>VDS=30V,<br>Frequency=1.0MHz<br>~~a~~||-<br>~~a~~<br>~~Pf~~<br>~~pf~~|585<br>~~a~~<br>~~Pf~~<br>~~pf~~|760<br>~~a~~<br>~~Pf~~<br>~~pf~~|pF<br>~~a~~|
|Coss<br>~~ee~~<br>~~ee~~<br>~~a~~|Output Capacitance<br>~~ee~~|||-<br>~~Pf~~<br>~~pf~~<br>~~Pf~~|36<br>~~Pf~~<br>~~pf~~<br>~~Pf~~|-<br>~~Pf~~<br>~~pf~~<br>~~Pf~~||
|Crss<br>~~ee~~<br>~~a~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~|||-<br>~~pf~~<br>~~Pf~~<br>~~pt~~|20<br>~~pf~~<br>~~Pf~~<br>~~pt~~|-<br>~~pf~~<br>~~Pf~~<br>~~pt~~||
|td(ON)<br>~~a~~<br>~~ee~~<br>~~ee~~|Turn-on Delay Time<br>~~ee~~|VDD=30V, RL=30Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~ee~~||-<br>~~Pf~~<br>~~pt~~<br>~~pf~~|10<br>~~Pf~~<br>~~pt~~<br>~~pf~~|18<br>~~Pf~~<br>~~pt~~<br>~~pf~~|ns|
|tr<br>~~ee~~<br>~~ee~~<br>~~rs~~|Turn-on Rise Time<br>~~ee~~|||-<br>~~pt~~<br>~~pf~~<br>~~pf~~|7<br>~~pt~~<br>~~pf~~<br>~~pf~~|13<br>~~pt~~<br>~~pf~~<br>~~pf~~||
|td(OFF)<br>~~ee~~<br>~~rs~~<br>~~ee~~|Turn-off Delay Time<br>~~ee~~|||-<br>~~pf~~<br>~~pf~~<br>~~Pf~~|22<br>~~pf~~<br>~~pf~~<br>~~Pf~~|40<br>~~pf~~<br>~~pf~~<br>~~Pf~~||
|tf<br>~~rs~~<br>~~ee~~|Turn-off Fall Time<br>~~ee~~|||-<br>~~pf~~<br>~~Pf~~|4<br>~~pf~~<br>~~Pf~~|7<br>~~pf~~<br>~~Pf~~||
|**Gate Charge Characteristics**<br>e<br>~~ee~~<br>~~Pf~~<br>~~ee~~||||||||
|Qg<br>~~ee~~<br>~~es~~|Total Gate Charge<br>~~ee~~<br>~~ee~~|VDS=30V, VGS=4.5V,<br>IDS=5A<br>~~ee~~<br>~~ee~~<br>~~|~~||-<br>~~ee~~<br>~~|~~<br>~~|~~|6.1<br>~~ee~~|-<br>~~ee~~|nC<br>~~ee~~|
|Qg<br>~~es~~<br>~~a~~|Total Gate Charge<br>~~ee~~<br>~~ee~~|VDS=30V, VGS=10V,<br>IDS=5A<br>~~ee~~<br>~~|~~<br>~~ee~~<br>~~|~~||-<br>~~|~~<br>~~|~~<br>~~|~~|13<br>|19<br>||
|Qgs<br>~~es~~<br>~~a~~<br>~~ee~~|Gate-Source Charge<br>~~ee~~<br>~~ee~~|||-<br>~~|~~<br>~~|~~<br>~~|~~~~**|**~~|2.4<br>~~**|**~~|-<br>~~**|**~~||
|Qgd<br>~~a~~<br>~~ee~~|Gate-Drain Charge<br>~~ee~~|||-<br>~~|~~~~**|**~~|2.4<br>~~**|**~~|-<br>~~**|**~~||



Note d：Pulse test ; pulse width≤300µs, duty cycle≤2%. Note e：Guaranteed by design, not subject to production testing. 

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power WA ®<br>**----- End of picture text -----**<br>


## **Typical Operating Characteristics** 

**Power Dissipation** 

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30<br>25<br>20<br>15<br>10<br>5<br>TC=25oC<br>0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)<br>- Power (W)<br>tot<br>P<br>**----- End of picture text -----**<br>


**Drain Current** 

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12<br>10<br>8<br>6<br>4<br>2<br>TC=25oC,VG=10V<br>0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Safe Operation Area** 

**Thermal Transient Impedance** 

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100 2<br>1 Duty = 0.5<br>0.2<br>100µs<br>10 0.1<br>0.1<br>0.05<br>1ms 0.02<br>1 0.01<br>0.01<br>10ms<br>DC<br>0.1<br>1E-3<br>Single Pulse<br>0.01 TC=25oC 1E-4 RθJC : 4.8oC/W<br>0.01 0.1 1 10 100 500 1E-6 1E-5 1E-4 1E-3 0.01 0.1<br>VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


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## **Typical Operating Characteristics (Cont.)** 

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Output Characteristics Drain-Source On Resistance<br>20 210<br>VGS=3.5,4,5,6,7,8,9,10V<br>180<br>16<br>150<br>12<br>V =4.5V<br>GS<br>120<br>8<br>V =10V<br>GS<br>90<br>3V<br>4<br>60<br>2.5V<br>0 Ae 30<br>0 1 2 3 4 5 0 3 6 9 12 15<br>VDS - Drain - Source Voltage (V) ID - Drain Current (A)<br>Gate-Source On Resistance Gate Threshold Voltage<br>160 1.6<br>I DS =5A IDS=250µA<br>150<br>1.4<br>140<br>1.2<br>130<br>1.0<br>120<br>0.8<br>110<br>0.6<br>100<br>90 i. 0.4<br>2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150<br>VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)<br>)<br>Ω<br> - Drain Current (A) - On - Resistance (m<br>ID<br>DS(ON)<br>R<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


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## **SM1A24NSKP** 

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®<br>**----- End of picture text -----**<br>


## **Typical Operating Characteristics (Cont.)** 

## **Drain-Source On Resistance** 

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2.5<br>VGS = 10V<br> I  = 5A<br>DS<br>2.0<br>1.5<br>1.0<br>0.5<br>RON@Tj=25oC: 105mΩ<br>0.0<br>-50 -25 0 25 50 75 100 125 150<br>  Tj - Junction Temperature (°C)<br>Capacitance<br>900<br>Frequency=1MHz<br>800<br>700<br>600 Ciss<br>500<br>400<br>300<br>200<br>100<br>Coss<br>0 Smuts Crss<br>0 8 16 24 32 40<br>VDS - Drain-Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


**Source-Drain Diode Forward** 

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20<br>10<br>T =150oC<br>j<br>T =25oC<br>1 j<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD - Source - Drain Voltage (V)<br> - Source Current (A)<br>IS<br>**----- End of picture text -----**<br>


**Gate Charge** 

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10<br>9 V DS = 30V<br> I DS = 5A<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 2 4 6 8 10 12 14<br>QG - Gate Charge (nC)<br> - Gate-source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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**SM1A24NSKP** 

## **®** sinopower WA. 

## **Avalanche Test Circuit and Waveforms** 

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VDS<br>L<br>DUT<br>J<br>RG<br>VDD<br>tp IL<br>0.01 Ω<br>**----- End of picture text -----**<br>


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tp VDSX(SUS)<br>IAS rn VDS<br>VDD<br>EAS<br>tAV<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

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VDS<br>RD<br>DUT<br>VGS<br>RG<br>e VDD<br>tp<br>o&<br>**----- End of picture text -----**<br>


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VDS<br>90%<br>10%<br>VGS<br>td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


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## **SM1A24NSKP** 

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®<br>**----- End of picture text -----**<br>


## **Package Information** 

## **DFN5x6-8** 

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F F1<br>D1<br>H<br>K<br>G1<br>G<br>D<br>e B<br>res<br>SYM MILLIMETERS DFN5x6-8 INCHES RECOMMENDED LAND PATTERN<br>BOL MIN. MAX. MIN. MAX. 4.6<br>A 0.90 1.20 0.035 0.047<br>SS = 0.77<br>B 0.3 0.51 0.012 0.020<br>eee C 0.19 0.25 0.007 0.010<br>D 4.80 5.30 0.189 0.209<br>D1 4.00 4.40 0.157 0.173<br>E 5.90 6.20 0.232 0.244 3.6<br>=S==1<br>E1 5.50 5.80 0.217 0.228 6.1<br>e 1.27 BSC 0.050 BSC<br>F 0.05 0.30 0.002 0.012<br>F1 0.35 0.75 0.014 0.030<br>G 0.05 0.30 0.002 0.012<br>0.5 1.27<br>G1 0.35 0.75 0.014 0.030<br>H 3.34 3.9 0.131 0.154<br>K 0.762 - 0.03 -<br>UNIT: mm<br>Note : 1.Dimension D, D1,D2 and E1 do not include mold flash or protrusions.<br>              Mold flash or protrusions shall not exceed 10 mil.<br>E1 E<br>A<br>C<br>0.61<br>1.16<br>1.18<br>0.71<br>**----- End of picture text -----**<br>


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## **SM1A24NSKP** 

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®<br>**----- End of picture text -----**<br>


## **Carrier Tape & Reel Dimensions** 

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to pad OD0 é P0 & P2 fe P1 ele A<br>K0 B A0 OD1 B A<br>SECTION A-A<br>SECTION B-B<br>d<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**DFN5x6-8**|330.0±2.00|2.00<br>50 MIN.|12.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.201.5 MIN.|20.2 MIN.|20.2 MIN. 12.0±0.30|1.75±0.10|5.5±0.10|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.0±0.10|8.0±0.10|2.0±0.10<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.001.5 MIN.|0.3±0.05|0.05<br>6.5±0.10|5.3±0.10|1.4±0.10|



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sinopower **®** UX 

## **SM1A24NSKP** 

## **Taping Direction Information** 

## **DFN5x6-8** 

USER DIRECTION OF FEED 

## **Classification Profile** 

Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2013 

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**®** 

## **SM1A24NSKP** 

## **Classification Reflow Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) **Package Volume mm3 Volume mm[3 ] Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C Table 2. Pb-free Process – Classification Temperatures (Tc) ~~FE~~ **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~—————~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~——=—~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C 

## **Customer Service** 

## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan 

TEL: 886-3-5635818 Fax: 886-3-5642050 

_www.sinopowersemi.com_ 

Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2013 

11
Updated at February 12, 2024
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