SM1A23NSV

SM1A23NSV, Single MOSFET, N Channel, 100V, SOT-223

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Manufacturer: Sinopower
Product type: Single MOSFETs
Cfg.: N
BV(V): 100
Package: View
VGS (±V): 20
VTH(V) typ.: 2
ID (A) TA=25: 4.2
Rg (Ω) typ.: 2.5
Ciss (pF) typ.: 740
Coss (pF) typ.: 47
Crss (pF) typ.: 25
Tape & Reel: View
Quality Report: View
RON(mΩ max) 10V max.: 100
RON(mΩ max) 4.5V max.: 110
Delivery and price
Units per pack	1
Price	Ask for quotation
Current stock	10+
Lead time	30 days
Datasheet
**SM1A23NSV** 

- N-Channel Enhancement Mode MOSFET 

- ~~pO~~ 

## **Features** 

## **Pin Description** 

- 100V/4.2A, 

   - DS(ON)= 100mΩ(max.) @ VGS= 10V 

   - DS(ON)= 110mΩ(max.) @ VGS= 4.5V 

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- Reliable and Rugged 

- Lead Free and Green Devices Available (RoHS Compliant) 

Top View SOT-223 

## **Applications** 

- Power Management in DC/DC Converter. 

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N-Channel MOSFET 

## **Ordering and Marking Information** 

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SM1A23NS Package Code<br>     V : SOT-223<br>Assembly Material<br>Operating Junction Temperature Range<br>Handling Code      C : -55  to 150  [o] C<br>Temperature Range Handling Code<br>Package Code      TR : Tape & Reel (2500ea/reel)<br>Assembly Material<br>     G : Halogen and Lead Free Device<br>(Ee | |<br>1A23N<br>SM1A23NS  V: XXXXX - Lot Code<br>XXXXX<br>Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate<br>termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free<br>-<br>requirements of IPC/JEDEC J STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER<br>defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in<br>homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).<br>**----- End of picture text -----**<br>


SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

## **SM1A23NSV** 

## **Absolute Maximum Ratings** (TA = 25°C Unless Otherwise Noted) 

|**Symbol**<br>~~a~~<br>~~Re~~|**Parameter**<br>|**Parameter**<br>|**Rating**|**Unit**|
|---|---|---|---|---|
|**Common Ratings **(TA=25°C Unless Otherwise Noted)<br>~~Re~~|||||
|VDSS<br>~~Rea~~|Drain-Source Voltage<br>~~a~~||100|V|
|VGSS<br>~~a~~<br>~~a~~|Gate-Source Voltage<br>~~a~~<br>~~a~~||±20||
|TJ<br>~~a~~<br>~~ee~~|Maximum Junction Temperature<br>~~a~~<br>~~ee~~||150<br>~~ee~~|°C<br>~~ee~~|
|TSTG<br>~~ee~~<br>~~a~~|Storage Temperature Range<br>~~ee~~||-55 to 150<br>~~ee~~||
|IS<br>~~ee~~<br>~~a~~<br>~~a~~|Diode Continuous Forward Current<br>~~ee~~<br>|TA=25°C<br>~~ee~~<br><br>~~ce~~|3<br>~~ee~~<br><br>~~ee~~|A<br>~~ee~~<br>|
|ID<br>~~a~~|Continuous Drain Current<br>~~a~~|TA=25°C<br>~~a~~<br>~~ce~~|4.2<br>~~a~~<br>~~ee~~||
|||TA=70°C<br>~~a~~<br>~~ce~~<br>~~rr~~|3.4<br>~~a~~<br>~~ee~~<br>~~rr~~||
|IDM<br>a<br><br>~~a~~|Pulsed Drain Current<br>~~a~~<br>|TA=25°C<br>~~a~~<br>~~ce ~~<br>~~rr~~<br><br>~~a~~|16<br>~~a~~<br> ~~ee~~<br>~~rr~~<br><br>~~ee~~||
|PD<br>~~a ee~~|Maximum Power Dissipation<br>~~ee~~|TA=25°C<br>~~ee~~<br>~~a~~<br>~~ee~~|3.5<br>~~ee~~<br>~~ee~~<br>~~ee~~|W<br>~~ee~~|
|||TA=70°C<br>~~ee~~<br>~~a~~<br>~~ee~~|2.2<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|RθJA<br>c<br>~~a~~|Thermal Resistance-Junction to Ambient<br>~~a!~~<br>|t≤10s<br>~~a ~~<br>~~ee ~~<br>~~a!~~|35<br> ~~ee~~<br> ~~ee~~<br>~~a!~~|°C/W<br>~~a!~~<br>|
|||SteadyState<br>~~a!~~<br>~~a~~<br>|70<br>~~a!~~<br>~~a~~<br>~~ee~~<br>||
|IAS<br>b<br>~~a~~<br>~~a~~|Avalanche Current, Singlepulse(L=0.5mH)<br>~~ee~~<br>||7<br>~~ee~~<br>~~ee~~<br>|A<br>~~ee~~<br>|
|EAS<br>b<br>~~a~~|Avalanche Energy, Singlepulse(L=0.5mH)<br>~~ee~~||12<br>~~ee~~<br>~~ee~~|mJ<br>~~ee~~|



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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

## **SM1A23NSV** 

## **Electrical Characteristics** (TA = 25°C Unless Otherwise Noted) 

|**Symbol**<br>~~aCn~~|**Parameter**<br>~~Cn~~|**Test Conditions**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~Cn~~||||||||
|BVDSS<br>~~Cn~~<br>~~ee~~|Drain-Source Breakdown Voltage<br>~~Cn~~<br>~~ee~~|VGS=0V, IDS=250µA<br>~~ee~~<br>~~ee~~||100<br>~~ee~~<br>|-<br>~~ee~~<br>|-<br>~~ee~~<br>|V<br>~~ee~~|
|IDSS<br>~~ee~~<br>~~ee~~<br>~~a~~|Zero Gate Voltage Drain Current<br>~~ee~~<br>~~ee~~<br>|VDS=80V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~ee~~<br>~~ee|~~<br>||-<br>~~ee~~<br>~~ee~~<br><br>~~|~~<br>|-<br>~~ee~~<br>~~ee~~<br><br>~~|~~<br>|1<br>~~ee~~<br>~~ee~~<br><br>|µA<br>~~ee~~<br>~~ee~~<br>|
||||TJ=85°C<br>~~ee~~<br>~~ee|~~<br>|-<br>~~ee~~<br>~~|~~<br>~~|~~<br>|-<br>~~ee~~<br>~~|~~<br>~~|~~<br>|30<br>~~ee~~<br>~~|~~<br>||
|VGS(th)<br>~~a~~|Gate Threshold Voltage<br>|VDS=VGS, IDS=250µA<br>~~ee~~<br>||1<br><br>~~|~~<br>|2<br><br>~~|~~<br>|3<br><br>|V<br>|
|IGSS<br>~~ee~~<br>~~EEE~~|Gate Leakage Current<br>~~ee~~<br>~~EEE~~|VGS=±20V, VDS=0V<br>~~ee~~<br>~~ee~~<br>~~EEE~~||-<br><br>~~ee~~<br>~~EEE~~|-<br><br>~~ee~~<br>~~EEE~~|±10<br><br>~~ee~~<br>~~EEE~~|µA<br>~~ee~~<br>~~EEE~~|
|RDS(ON)<br>d <br>~~EEE~~|Drain-Source On-state Resistance<br>~~EEE~~|VGS=10V, IDS=4A<br>~~EEE~~||-<br>~~EEE~~<br>~~ee ee~~|80<br>~~EEE~~<br>~~ee~~|100<br>~~EEE~~<br>~~ee~~|mΩ<br>~~EEE~~|
|||VGS=4.5V, IDS=3.5A<br>~~EEE~~<br>~~ee~~||~~EEE~~<br>~~ee~~<br>~~ee ee~~|85<br>~~EEE~~<br>~~ee~~<br>~~ee~~|110<br>~~EEE~~<br>~~ee~~<br>~~ee~~|mΩ<br>~~EEE~~<br>~~ee~~|
|**Diode Characteristics**<br>~~EEE~~<br>~~ee~~<br>~~ee ee~~<br>~~Ce~~<br>~~a~~<br>~~esee~~||||||||
|VSD<br>d<br>~~Ce~~<br>~~a~~<br>~~a~~|Diode Forward Voltage<br>~~Ce~~<br>~~es~~|ISD=3A, VGS=0V<br>~~Ce~~<br>~~ee~~<br>~~A~~||-<br>~~Ce~~<br>~~ee~~<br>~~os~~|0.8<br>~~Ce~~<br>~~ee~~<br>~~eres~~|1.3<br>~~Ce~~<br>~~ee~~<br>~~eres~~|V<br>~~Ce~~<br>~~ee~~|
|trr<br>~~a~~<br>~~es~~<br>~~a~~|Reverse Recovery Time<br>~~es~~<br>~~es~~<br>~~ee~~|ISD=3A, dlSD/dt=100A/µs<br>~~ee~~<br>~~es~~<br>~~A~~<br>~~ee~~||-<br>~~ee~~<br>~~es~~<br>~~os~~<br>~~|~~|27<br>~~ee~~<br>~~es~~<br>~~eres~~<br>~~|~~|-<br>~~ee~~<br>~~es~~<br>~~eres~~<br>~~|~~|ns<br>~~ee~~<br>~~es~~<br>~~|~~|
|Qrr<br>~~es~~<br>~~a~~|Reverse Recovery Charge<br>~~es~~<br>~~ee~~|||-<br>~~es~~<br>~~os~~<br>~~|~~|36<br>~~es~~<br>~~eres~~<br>~~|~~|-<br>~~es~~<br>~~eres~~<br>~~|~~|nC<br>~~es~~<br>~~|~~|
|**Dynamic Characteristics**<br>e<br>~~A~~<br>~~os eres~~<br>~~a~~<br>~~ee~~<br>~~|~~||||||||
|RG<br>~~a~~<br>~~ee~~|Gate Resistance|VGS=0V,VDS=0V,f=1MHz||-<br>~~pt~~|2.5<br>~~pt~~|-<br>~~pt~~|Ω|
|Ciss<br>~~a~~<br>~~ee~~<br>~~ee~~|Input Capacitance|VGS=0V,<br>VDS=30V,<br>Frequency=1.0MHz<br>~~ee~~||-<br>~~pt~~<br>~~P|~~|740<br>~~pt~~<br>~~P|~~|960<br>~~pt~~<br>~~P|~~|pF|
|Coss<br>~~ee~~<br>~~ee~~<br>~~a~~|Output Capacitance<br>~~ee~~|||-<br>~~pt~~<br>~~P|~~<br>~~pf~~|47<br>~~pt~~<br>~~P|~~<br>~~pf~~|-<br>~~pt~~<br>~~P|~~<br>~~pf~~||
|Crss<br>~~ee~~<br>~~a~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~|||-<br>~~P|~~<br>~~pf~~<br>~~|~~|25<br>~~P|~~<br>~~pf~~<br>~~|~~|-<br>~~P|~~<br>~~pf~~<br>~~|~~||
|td(ON)<br>~~a~~<br>~~ee~~<br>~~ee~~|Turn-on Delay Time<br>~~ee~~|VDD=30V, RL=30Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~ee~~<br>~~|~~<br>~~ee~~<br>~~**|**~~<br>||-<br>~~pf~~<br>~~|~~<br>~~|~~|11<br>~~pf~~<br>~~|~~<br>|20<br>~~pf~~<br>~~|~~<br>|ns<br>|
|tr<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-on Rise Time<br>~~ee~~<br>|||-<br>~~|~~<br>~~|~~~~**|**~~<br>~~**|**|~~<br>|6<br>~~|~~<br>~~**|**~~<br>|11<br>~~|~~<br>~~**|**~~<br>||
|td(OFF)<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-off Delay Time<br>~~ee~~<br>|||-<br>~~|~~~~**|**~~<br>~~**|**|~~<br>|27<br>~~**|**~~<br>|49<br>~~**|**~~<br>||
|tf<br>~~ee~~<br>~~ee~~|Turn-off Fall Time<br>~~ee~~<br>|||-<br>~~**|**~~<br>~~**|**|~~<br>|5<br>~~**|**~~<br>|10<br>~~**|**~~<br>||
|**Gate Charge Characteristics**<br>e<br>~~ee~~<br>~~**|** |~~<br>~~eea~~||||||||
|Qg|Total Gate Charge|VDS=30V, VGS=4.5V,<br>IDS=4A||-|7.6|-|nC<br>~~a~~|
|Qg<br>~~a~~<br>~~a~~|Total Gate Charge<br>~~a~~<br>~~ee~~|VDS=30V, VGS=10V,<br>IDS=4A<br>~~a~~<br>~~ee~~<br>~~|~~<br>~~|~~||-<br>~~a~~<br>~~pt~~<br>~~|~~<br>~~|~~|16<br>~~a~~<br>~~pt~~|23<br>~~a~~<br>~~pt~~||
|Qgs<br>~~a~~<br>~~a~~|Gate-Source Charge<br>~~ee~~|||-<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|2.5|-||
|Qgd<br>~~a~~<br>~~a~~|Gate-Drain Charge<br>~~ee~~|||-<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|3|-||



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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

## **SM1A23NSV** 

## **Typical Operating Characteristics** 

## **Drain Current** 

## **Power Dissipation** 

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4 5<br>4<br>3<br>3<br>2<br>2<br>1<br>1<br>TA=25oC TA=25oC,VG=10VA=25oC,VG=10V=25oC,VG=10VoC,VG=10VC,VG=10VG=10V=10V<br>0 ni 0<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)<br>Safe Operation Area Thermal Transient Impedance<br>100 3<br>1 Duty = 0.5<br>10<br>0.2<br>0.1<br>1 300µs 0.05<br>1ms<br>0.1 0.02<br>10ms<br>0.01<br>100ms<br>0.1<br>1s<br>DC<br>0.01 TA=25oC 0.01 Single Pulse Mounted on 1inRθJA : 35oC/W 2 pad<br>0.01 0.1 1 10 100 800 1E-4 1E-3 0.01 0.1 1 10 60<br>VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br>- Power (W)<br>tot<br>P - Drain Current (A)<br>ID D<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


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5<br>4<br>3<br>2<br>1<br>TA=25oC,VG=10VA=25oC,VG=10V=25oC,VG=10VoC,VG=10VC,VG=10VG=10V=10V<br>0<br>0 20 40 60 80 100 120 140 160<br>- Drain Current (A)<br>ID D<br>**----- End of picture text -----**<br>


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## **SM1A23NSV** 

## **Typical Operating Characteristics (Cont.)** 

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Output Characteristics<br>20<br>VGS=3.5,4,5,6,7,8,9,10V<br>16<br>12<br>8 3V<br>4<br>2.5V<br>fn<br>0<br>0 1 2 3 4 5 6<br>VDS - Drain - Source Voltage (V)<br>Gate-Source On Resistance<br>180<br>I =4A<br>DS<br>160<br>140<br>120<br>100<br>80<br>60<br>2 3 4 5 6 7 8 9 10<br>VGS - Gate - Source Voltage (V)<br>- Drain Current (A)<br>ID<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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Drain-Source On Resistance<br>140<br>120<br>100<br>V =4.5V<br>GS<br>80<br>V =10V<br>GS<br>60<br>40<br>0 3 6 9 12 15<br>ID - Drain Current (A)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


**Gate Threshold Voltage** 

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1.6<br>IDS=250µA<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (°C)<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


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## **SM1A23NSV** 

## **Typical Operating Characteristics (Cont.)** 

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Drain-Source On Resistance<br>2.5<br>V  = 10V<br>GS<br> I  = 4A<br>DS<br>2.0<br>1.5<br>1.0<br>0.5<br>RON@Tj=25oC: 80mΩ<br>0.0 a<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (°C)<br>Capacitance<br>1100<br>Frequency=1MHz<br>1000<br>900<br>800<br>Ciss<br>700<br>600<br>500<br>400<br>300<br>200<br>100 Coss<br>Crss<br>0<br>0 8 16 24 32 40<br>VDS - Drain - Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


**Source-Drain Diode Forward** 

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20<br>10<br>T =150oC<br>j<br>T =25oC<br>1 j<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD - Source - Drain Voltage (V)<br>Gate Charge<br>10<br>V = 30V<br>DS<br>9<br> I = 4A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 4 8 12 16<br>QG - Gate Charge (nC)<br> - Source Current (A)<br>IS<br> - Gate - source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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## **SM1A23NSV** 

## **Avalanche Test Circuit and Waveforms** 

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VDS<br>L<br>VDSX(SUS)<br>tp<br>DUT<br>VDS<br>IAS<br>RG<br>VDD<br>VDD<br>tp IL EAS<br>0.01Ω<br>tAV<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

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VDS<br>RD<br>DUT VDS<br>90%<br>VGS<br>RG<br>VDD<br>10%<br>tp<br>VGS<br>td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

## **SM1A23NSV** 

## **Package Information** 

## **SOT-223** 

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D<br>b2<br>PT<br>SEE<br>VIEW A<br>n/n) |<br>PA Ly |<br>| | e | | c<br>e1<br>GAUGE PLANE<br>SEATING PLANE<br>L<br>b<br>|| | a, :<br>VIEW A<br>PO SOT-223 RECOMMENDED LAND PATTERN<br>SYM ee MILLIMETERS INCHES 3.1<br>BO<br>L MIN. MAX. MIN. MAX.<br>A - 1.80 - 0.071<br>es A1 0.02 0.10 0.001 0.004 a e<br>A2 1.50 1.70 0.059 0.067<br>b 0.66 0.84 0.026 0.033<br>es<br>a b2 2.90 3.10 0.114 0.122<br>a c 0.23 0.33 0.009 0.013 5.98<br>a D 6.30 6.70 0.248 0.264<br>E 6.70 7.30 0.264 0.287<br>es<br>E1 3.30 3.70 0.130 0.146<br>e 2.30 BSC 0.091 BSC<br>e1 4.60 BSC 0.181 BSC<br>L 0.75 - 0.030 -<br>0 0° 10° 0° 10° 0.81 2.3<br>a<br>Note : 1. Follow from JEDEC TO-261 AA.<br>           2. Dimension D and E1 are determined at the outermost extremes UNIT: mm<br>               of the plastic exclusive of mold flash, tie bar burrs, gate burrs,<br>               and interlead flash, but including any mismatch between the top<br>               and bottom of the plastic body.<br>°<br>0<br>E1 E<br>A2 A<br>A1<br>0.25<br>1.12<br>1.12<br>**----- End of picture text -----**<br>


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## **SM1A23NSV** 

## **Carrier Tape & Reel Dimensions** 

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OD0 P0 P2 P1 A<br>K0 B A0 OD1 B A<br>SECTION A-A<br>: Lae SECTION B-B<br>d<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**SOT-223**|320.0±2.00|2.00<br>50 MIN.|12.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.201.5 MIN.|1.5 MIN.<br>20.2 MIN.|20.2 MIN. 12.00±0.30 1.75|0.30 1.75±0.10|5.50±0.05|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.00±0.10|8.00±0.10|2.00±0.50<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.001.5 MIN.|1.5 MIN.<br>0.6+0.00<br>-0.40|0.6+0.00<br>-0.406.90±0.20|7.50±0.20|2.10±0.20|



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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

**SM1A23NSV** 

## **Taping Direction Information** 

## **SOT-223** 

USER DIRECTION OF FEED 

## **Classification Profile** 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

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## **SM1A23NSV** 

## **Classification Reflow Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 

**Package Volume mm[3 ] Volume mm[3 ] Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~=S=—~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~—_—=————~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~S———————~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C 

## **Customer Service** 

## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan TEL: 886-3-5635818 Fax: 886-3-5642050 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

_www.sinopowersemi.com_ 

11
Updated at February 12, 2024
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