SM1A20NSV

SM1A20NSV, Single MOSFET, N Channel, 100V, SOT-223

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Manufacturer: Sinopower
Product type: Single MOSFETs
Cfg.: N
BV(V): 100
Package: View
VGS (±V): 20
VTH(V) typ.: 2
ID (A) TA=25: 8
Rg (Ω) typ.: 1
Ciss (pF) typ.: 2400
Coss (pF) typ.: 150
Crss (pF) typ.: 85
Tape & Reel: View
Quality Report: View
RON(mΩ max) 10V max.: 29
RON(mΩ max) 4.5V max.: 33
Delivery and price
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Current stock	10+
Lead time	30 days
Datasheet
**®** wer WN 

**SM1A2 0NSV ®** 

N-Channel Enhancement Mode MOSFET ~~pO~~ 

## **Features** 

## **Pin Description** 

- 100V/8A, 

- RDS(ON)= 29m Ω (max.) @ VGS= 10V 

- RDS(ON)= 33m Ω (max.) @ VGS= 4.5V 

- Reliable and Rugged 

- Lead Free and Green Devices Available (RoHS Compliant) 

## **Applications** 

- Power Management in DC/DC Converter. 

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N-Channel MOSFET 

## **Ordering and Marking I nform ation** 

SM1A20NS Package Code V : SOT-223 Assembly Material Operating Junction Temperature Range Handling Code C : -55  to 150[o] C Temperature Range Handling Code Package Code TR : Tape & Reel (2500ea/reel) Assembly Material G : Halogen and Lead Free Device 1A20N SM1A20NS  V: XXXXX - Lot Code XXXXX 

Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free **-** requirements of IPC/JEDEC J STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 

SINOPOWER reserves the right to m ake changes to im prove reliability or m anufacturability without notice, and advise custom ers to obtain the latest version of relevant inform ation to verify before placing orders. 

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Copyright  Sinopow er Sem iconductor, Inc. Rev. A.2 - Decem ber, 2013 

**SM1A2 0NSV** 

## **®** sinopower WN 

**Absolute Maxim um  Ratings** (TA = 25 ° C Unless Otherwise Noted) 

|**Symbol**<br>~~a~~|**Parameter**<br>~~a~~|**Parameter**<br>~~a~~|**Rating**<br>~~a~~|**Unit**<br>~~a~~|
|---|---|---|---|---|
|**Common Ratings **(TA= 25°C Unless Otherwise Not ed)|||||
|VDSS<br>~~**a**~~|Drain-Source Voltage<br>~~**a**~~||100<br>~~**a**~~|V<br>~~**a**~~|
|VGSS<br>~~**a**~~|Gate-Source Voltage<br>~~**a**~~<br>~~ee~~||±20<br>~~**a**~~<br>~~ee~~||
|TJ<br>~~a~~<br>~~es~~|Maximum Junction Temperature<br>~~a~~||150|°C|
|TSTG<br>~~a~~<br>~~es~~<br>~~ee~~|Storage Temperature Range<br>~~a~~||-55 to 150||
|IS<br>~~es~~<br>~~ee~~|Diode Continuous Forward Current|TA=25°C<br>~~ee~~|4<br>~~ee~~|A<br>~~ee~~|
|ID<br>~~ee~~<br>~~i e~~|Continuous Drain Current<br>~~e~~~~**e**~~|TA=25°C<br>~~**e**~~<br>~~ee~~|8<br>~~**e**~~<br>~~ee~~|A<br>~~**e**~~<br>~~ee~~|
|||TA=70°C<br>~~**e**~~<br>~~ee~~|6.4<br>~~**e**~~<br>~~ee~~<br>~~e~~||
|IDM<br>a<br>~~i e~~<br>~~a~~|Pulsed Drain Current<br>~~e~~~~**e**~~<br>|TA=25°C<br>~~**e**~~<br>~~ee~~<br><br>~~ee~~|32<br>~~**e**~~<br>~~ee~~<br>~~e~~<br><br>~~ee~~<br>|A<br>~~**e**~~<br>~~ee~~<br><br>|
|PD<br>~~aa~~|Maximum Power Dissipation<br>~~es~~|TA=25°C<br>~~ee ~~<br>~~es~~<br>~~ee~~|3.5<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|W<br>~~ee~~<br>~~es~~<br>~~ee~~|
|||TA=70°C<br>~~es~~<br>~~ee~~|2.2<br>~~es~~<br>~~ee~~<br>~~ee~~||
|RθJA<br>c<br>~~Ee~~<br>~~a~~<br>~~ee~~|Thermal Resistance-Junction to Ambient<br>~~Ee~~<br>|t≤10s<br>~~ee ~~<br>~~Ee~~<br><br>|35<br>~~ee~~<br> ~~ee~~<br>~~Ee~~<br><br>|°C/W<br>~~ee~~<br>~~Ee~~<br>~~ee~~<br>|
|||SteadyState<br>~~Ee~~<br>~~a ~~<br>|70<br>~~Ee~~<br> ~~ee~~<br><br>~~ee~~|°C/W<br>~~Ee~~<br>~~eeee~~<br>|
|IAS<br>b<br>~~a~~<br>~~ee~~|Avalanche Current, Single pulse (L=0.5mH)<br><br>~~ee~~||18<br><br>~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~|
|EAS<br>b<br>~~ee~~|Avalanche Energy, Singlepulse(L=0.5mH)||81<br>~~ee~~|mJ|



Note a: Pulse width is limited by maximum junction temperature. 

b: UIS tested and pulse width are limited by maximum junction temperature 150oC (initial temperature Tj=25°C) c: Surface Mounted on 1in2 pad area, 

**Electrical Characteristics** (TA = 25 ° C Unless Otherwise Noted) 

|**Symbol**<br>~~a~~|**Parameter**<br>~~ee ee~~|**Test Conditions**<br>~~ee~~|**Test Conditions**<br>~~ee~~|**Min.**<br>~~se~~|**Typ.**<br>~~se~~|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~a~~<br>~~ee ee~~<br>~~se~~<br>~~CO~~<br>~~a~~<br>~~esesee~~<br>~~ee~~||||||||
|BVDSS<br>Drain-Source Breakdown Voltage<br>~~a~~|Drain-Source Breakdown Voltage<br>~~es~~|VGS=0V, IDS=250µA<br>~~es~~||100<br>~~ee~~|-<br>~~ee~~|-|V|
|IDSS<br>Zero Gate Voltage Drain Current<br>~~a~~<br>i~~ee~~<br>~~Pe~~|Zero Gate Voltage Drain Current<br>~~es~~<br>~~ee~~|VDS=80V, VGS=0V<br>TJ=85°C<br>~~es ~~<br>~~ee~~<br>~~ff~~||-<br> ~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|1<br>~~ee~~|µA<br>~~ee~~|
||||TJ=85°C<br>~~ee~~<br>~~ff~~|-<br>~~ee~~<br>~~ff~~|-<br>~~ee~~<br>~~ff~~|30<br>~~ee~~<br>~~ff~~||
|VGS(th)<br>Gate Threshold Voltage<br>~~Pe~~<br>~~Cs~~|Gate Threshold Voltage|VDS=VGS, IDS=250µA<br>~~ff~~||1<br>~~ff~~|2<br>~~ff~~|3<br>~~ff~~|V|
|IGSS<br>Gate Leakage Current<br>~~Pe~~<br>~~Cs~~<br>~~eeee~~|Gate Leakage Current<br>~~ee~~|VGS=±20V, VDS=0V<br>~~ff~~<br>~~ee~~||-<br>~~ff~~<br>~~ee~~|-<br>~~ff~~<br>~~ee~~|±100<br>~~ff~~<br>~~ee~~|nA<br>~~ee~~|
|RDS(ON)<br>d Drain-Source On-state Resistance<br>~~Cs~~<br>~~eeee~~|Drain-Source On-state Resistance<br>~~ee~~|VGS=10V, IDS=8A<br>~~ee~~||-<br>~~ee~~<br>~~ee~~|24<br>~~ee~~<br>~~ee~~|29<br>~~ee~~<br>~~ee~~|mΩ<br>~~ee~~<br>~~ee~~|
|||VGS=4.5V, IDS=6A<br>~~ee~~<br>~~ee~~||-<br>~~ee~~<br>~~ee~~<br>~~ee~~|25<br>~~ee~~<br>~~ee~~<br>~~ee~~|33<br>~~ee~~<br>~~ee~~<br>~~ee~~|mΩ<br>~~ee~~<br>~~ee~~<br>~~ee~~|



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## **SM1A2 0NSV** 

## **®** sinopower WN 

## **Electrical Characteristics ( Cont.)** (TA = 25 ° C Unless Otherwise Noted) 

|**Electrical Characteristics ( Cont.)**<br>~~a~~|**Electrical Characteristics ( Cont.)**<br>~~ee~~|**Electrical Characteristics ( Cont.)**(TA = 25A = 25= 25°C Unless Otherwise Noted)|C Unless Otherwise Noted)|C Unless Otherwise Noted)|C Unless Otherwise Noted)||
|---|---|---|---|---|---|---|
|**Symbol**<br>~~a~~<br>~~a~~|**Parameter**<br>~~ee~~|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|**Diode Characteristics**<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~a~~<br>~~ee~~|||||||
|VSD<br>c<br>~~a~~<br>~~a~~|Diode Forward Voltage<br>~~ee~~|ISD=5A, VGS=0V|-|0.8|1.3|V|
|trr<br>~~a~~<br>~~**a**~~|Reverse Recovery Time<br>~~ee~~<br>~~**a**~~|ISD=5A, dlSD/dt=100A/µs<br>~~**a**e~~<br>~~|~~|-<br>~~e~~<br>~~|~~<br>~~|~~|40<br>~~e~~<br>~~TT~~|-<br>~~e~~<br>~~TT~~|ns<br>~~e~~<br>~~TT~~|
|Qrr<br>~~**a**~~|Reverse Recovery Charge<br>~~**a**~~||-<br>~~e~~<br>~~|~~<br>~~|~~|70<br>~~e~~<br>~~TT~~|-<br>~~e~~<br>~~TT~~|nC<br>~~e~~<br>~~TT~~|
|**Dynamic Characteristics**d<br>~~**a**e~~<br>~~|~~<br>~~|TT~~<br>~~oe~~|||||||
|RG<br>~~a eG~~<br>~~a~~|Gate Resistance<br>~~eG~~<br>~~ae~~|VGS=0V,VDS=0V,f=1MHz<br>~~eG~~<br>~~ae~~|-<br>~~eG~~<br>~~P|~~|1.0<br>~~eG~~<br>~~P|~~|-<br>~~eG~~<br>~~P|~~|Ω<br>~~eG~~|
|Ciss<br>~~a~~<br>~~ee~~|Input Capacitance<br>~~ae~~|VGS=0V,<br>VDS=30V,<br>Frequency=1.0MHz<br>~~ae~~|-<br>~~P|~~<br>~~P|~~|2400<br>~~P|~~<br>~~P|~~|3120<br>~~P|~~<br>~~P|~~|pF|
|Coss<br>~~a ~~<br>~~ee~~<br>~~ee~~|Output Capacitance<br> ~~ae~~<br>~~ee~~||-<br>~~P|~~<br>~~P|~~<br>~~PTT~~|150<br>~~P|~~<br>~~P|~~<br>~~PTT~~|-<br>~~P|~~<br>~~P|~~<br>~~PTT~~||
|Crss<br>~~ee~~<br>~~ee~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~||-<br>~~P|~~<br>~~PTT~~<br>~~PTT~~|85<br>~~P|~~<br>~~PTT~~<br>~~PTT~~|-<br>~~P|~~<br>~~PTT~~<br>~~PTT~~||
|td(ON)<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-on Delay Time<br>~~ee~~<br>~~ee~~<br>~~ee~~|VDD=30V, RL=30Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~ee~~<br>~~ee~~<br>~~**|**~~|-<br>~~PTT~~<br>~~PTT~~<br>~~PTT~~|18<br>~~PTT~~<br>~~PTT~~<br>~~PTT~~|33<br>~~PTT~~<br>~~PTT~~<br>~~PTT~~|ns|
|tr<br>~~ee~~<br>~~ee~~<br>~~a~~|Turn-on Rise Time<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~PTT~~<br>~~PTT~~<br>~~PT~~|9<br>~~PTT~~<br>~~PTT~~<br>~~PT~~|17<br>~~PTT~~<br>~~PTT~~<br>~~PT~~||
|td(OFF)<br>~~ee~~<br>~~a~~<br>~~ee~~|Turn-off Delay Time<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~PTT~~<br>~~PT~~<br>~~**|**~~|56<br>~~PTT~~<br>~~PT~~|101<br>~~PTT~~<br>~~PT~~||
|tf<br>~~a~~<br>~~ee~~|Turn-off Fall Time<br>~~ee~~<br>~~ee~~||-<br>~~PT~~<br>~~**|**~~|14<br>~~PT~~<br>~~|~~|26<br>~~PT~~<br>~~|~~||
|**Gate Charge Characteristics**d<br>~~ee~~<br>~~ee~~<br>~~**|**~~<br>~~Rn~~|||||||
|Qg<br>~~Rn~~<br>~~ee~~|Total Gate Charge<br>~~Rn~~<br>~~ee~~|VDS=30V, VGS=4.5V,<br>IDS=8A<br>~~Rn~~|-<br>~~Rn~~<br>~~PTT~~|23<br>~~Rn~~<br>~~PTT~~|-<br>~~Rn~~<br>~~PTT~~|nC<br>~~Rn~~|
|Qg<br>~~ee~~|Total Gate Charge<br>~~ee~~|VDS=30V, VGS=10V,<br>IDS=8A<br>~~ee~~|-<br>~~PTT~~|50<br>~~PTT~~|65<br>~~PTT~~||
|Qgs<br>~~ee~~<br>~~a~~<br>~~ee~~|Gate-Source Charge<br>~~ee~~<br>~~ee~~||-<br>~~PTT~~<br>~~PTT~~<br>~~FT|~~|9<br>~~PTT~~<br>~~PTT~~<br>~~FT|~~|-<br>~~PTT~~<br>~~PTT~~<br>~~FT|~~||
|Qgd<br>~~ee~~|Gate-Drain Charge<br>~~ee~~||-<br>~~FT|~~|9<br>~~FT|~~|-<br>~~FT|~~||



Note d: Pulse test; pulse width ≤ 300 µ s, duty cycle ≤ 2%. e: Guaranteed by design, not subject to production testing. 

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## **SM1A2 0NSV** 

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## **Typical Operating Characteristics** 

## **Drain Current** 

## **Power Dissipation** 

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4.0 9<br>3.5 8<br>7<br>3.0<br>6<br>2.5<br>5<br>2.0<br>4<br>1.5<br>3<br>1.0<br>2<br>0.5 1<br>T A =25 o C T A =25 o C,V G =10V<br>0.0 - 0<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)j - Junction Temperature (°C)- Junction Temperature (°C)<br>Safe Operation Area Thermal Transient Impedance<br>100 3<br>1 Duty = 0.5<br>0.2<br>10<br>0.1<br>300 µ s 0.05<br>0.1<br>1ms<br>0.02<br>1<br>10ms 0.01<br>100ms<br>0.01<br>0.1<br>1s Single Pulse<br>DC Mounted on 1in 2  pad<br>0.01 TA=25oC 1E-3 R θ JA : 35oC/W<br>0.01 0.1 1 10 100 800 1E-4 1E-3 0.01 0.1 1 10 60<br>VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br>- Power (W)<br>tot<br>P - Drain Current (A)<br>ID D<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


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9<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>T A =25 o C,V G =10V<br>0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)j - Junction Temperature (°C)- Junction Temperature (°C)<br>- Drain Current (A)<br>ID D<br>**----- End of picture text -----**<br>


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**®** sinopower WN 

**SM1A2 0NSV** 

## **Typical Operating Characteristics ( Cont.)** 

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Output Characteristics<br>**----- End of picture text -----**<br>


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35<br>V GS =3.5,4,5,6,7,8,9,10V<br>30<br>25 /<br>20<br>3V<br>15<br>10<br>5<br>2.5V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>VDS - Drain - Source Voltage (V)<br>Gate-Source On Resistance<br>50<br>I =8A<br>DS<br>45<br>40<br>35<br>30<br>25<br>20<br>15<br>2 3 4 5 6 7 8 9 10<br>VGS - Gate - Source Voltage (V)<br>- Drain Current (A)<br>ID<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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32<br>30<br>28<br>V =4.5V<br>GS<br>26<br>24<br>V =10V<br>GS<br>22<br>20<br>18<br>0 5 10 15 20 25 30<br>ID - Drain Current (A)<br>Gate Threshold Voltage<br>1.6<br>I DS  =250 µ A<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (°C)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


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**SM1A2 0NSV** 

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## **Typical Operating Characteristics ( Cont.)** 

## **Drain-Source On Resistance** 

**Source-Drain Diode Forward** 

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2.2<br>V  = 10V<br>GS<br>2.0  I  = 8A<br>DS<br>1.8<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2 i R ON @T j =25 o C: 24m Ω<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (°C)<br>Capacitance<br>4000<br>Frequency=1MHz<br>3500<br>3000<br>2500 Ciss<br>2000<br>1500<br>1000<br>500<br>Coss<br>Crss<br>0<br>0 8 16 24 32 40<br>VDS - Drain - Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


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30<br>10<br>T =150 o C<br>j<br>T =25oC<br>1 j<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD - Source - Drain Voltage (V)<br>Gate Charge<br>10<br>V = 30V<br>DS<br>9<br> I = 8A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 10 20 30 40 50<br>QG - Gate Charge (nC)<br> - Source Current (A)<br>IS<br> - Gate - source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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sinopower **®** WA. 

## **SM1A2 0NSV** 

## **Avalanche Test  Circuit  and W aveform s** 

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VDS<br>L<br>VDSX(SUS)<br>tp<br>DUT<br>VDS<br>IAS<br>RG<br>VDD<br>VDD<br>tp IL EAS<br>0.01 Ω<br>tAV<br>**----- End of picture text -----**<br>


## **Sw it ching Tim e Test Circuit and W aveform s** 

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VDS<br>RD<br>DUT VDS<br>90%<br>VGS<br>RG<br>VDD<br>10%<br>tp<br>VGS<br>td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


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**SM1A2 0NSV** 

sinopower **®** 

## **Package I nform at ion** 

## **SOT-223** 

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D<br>b2<br>PT ( )<br>SEE<br>VIEW A<br>| | |<br>“TIt)] ~ty Lly |<br>0<br>e c<br>| | | LL<br>e1<br>GAUGE PLANE<br>SEATING PLANE<br>L<br>b<br>| | =<br>VIEW A<br>SYM DT MILLIMETERS SOT-223 INCHES RECOMMENDED LAND PATTERN 3.1<br>BO PD LT<br>L MIN. MAX. MIN. MAX.<br>—a A 1.80 0.071 -a——<br>A1 0.02 0.10 0.001 0.004<br>A2 1.50 1.70 0.059 0.067<br>b 0.66 0.84 0.026 0.033<br>es<br>i b2 2.90 3.10 0.114 0.122<br>a c 0.23 0.33 0.009 0.013 5.98<br>a D 6.30 6.70 0.248 0.264<br>a E 6.70 7.30 0.264 0.287<br>E1 3.30 3.70 0.130 0.146<br>e 2.30 BSC 0.091 BSC<br>e1 4.60 BSC 0.181 BSC<br>L 0.75 0.030<br>e 0 s 0 ° 10 ° 0 ° 10 ° 0.81 2.3<br>ooo H F<br>Note : 1. Follow from JEDEC TO-261 AA.<br>           2. Dimension D and E1 are determined at the outermost extremes UNIT: mm<br>               of the plastic exclusive of mold flash, tie bar burrs, gate burrs,<br>               and interlead flash, but including any mismatch between the top<br>               and bottom of the plastic body.<br>°<br>0<br>E1 E<br>A2 A<br>A1<br>0.25<br>1.12<br>1.12<br>**----- End of picture text -----**<br>


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## **SM1A2 0NSV** 

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**----- Start of picture text -----**<br>
®<br>**----- End of picture text -----**<br>


## **Carrier Tape & Reel Dim ensions** 

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OD0 P0 P2 P1 A<br>K0 B A0 OD1 B A<br>SECTION A-A<br>: Lae SECTION B-B<br>d<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**SOT-223**|320.0±2.00|2.00<br>50 MIN.|12.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.201.5 MIN.|1.5 MIN.<br>20.2 MIN.|20.2 MIN. 12.00±0.30 1.75|0.30 1.75±0.10|5.50±0.05|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.00±0.10|8.00±0.10|2.00±0.50<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.001.5 MIN.|1.5 MIN.<br>0.6+0.00<br>-0.40|0.6+0.00<br>-0.406.90±0.20|7.50±0.20|2.10±0.20|



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Copyright  Sinopow er Sem iconductor, Inc. Rev. A.2 - Decem ber, 2013 

**®** sinopower NA. 

**SM1A2 0NSV** 

## **Taping Direction I nform at ion** 

## **SOT-223** 

USER DIRECTION OF FEED 

## **Classificat ion Profile** 

Copyright  Sinopow er Sem iconductor, Inc. Rev. A.2 - Decem ber, 2013 

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**®** 

## **SM1A2 0NSV** 

## **Classification Reflow  Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) **Package Volume mm[3 ] Volume mm[3 ] Thickness <350** ≥ **350** <2.5 mm 235 ° C 220 ° C ≥ 2.5 mm 220 ° C 220 ° C ~~Ss~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 ° C 260 ° C 260 ° C 1.6 mm – 2.5 mm 260 ° C 250 ° C 245 ° C ≥ 2.5 mm 250 ° C 245 ° C 245 ° C ~~——=———~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245 ° C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100 % RH, 2atm, 121 ° C ~~S—————~~ TCT JESD-22, A104 500 Cycles, -65 ° C~150 ° C **Custom er Service Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan TEL: 886-3-5635818 Fax: 886-3-5642050 

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Copyright  Sinopow er Sem iconductor, Inc. Rev. A.2 - Decem ber, 2013
Updated at February 12, 2024
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