SM1A11NSV

SM1A11NSV, Single MOSFET, N Channel, 100V, SOT-223

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Manufacturer: Sinopower
Product type: Single MOSFETs
Cfg.: N
BV(V): 100
Package: View
VGS (±V): 25
VTH(V) typ.: 3
ID (A) TA=25: 6
Rg (Ω) typ.: 2.5
Ciss (pF) typ.: 1160
Coss (pF) typ.: 90
Crss (pF) typ.: 45
Tape & Reel: View
Quality Report: View
RON(mΩ max) 10V max.: 45
Delivery and price
Units per pack	1
Price	Ask for quotation
Current stock	10+
Lead time	30 days
Datasheet
## **SM1A11NSV** 

## **®** sinopower WN 

N-Channel Enhancement Mode MOSFET 

## **Features** 

## **Pin Description** 

- 100V/6A, 

   - DS(ON)= 45mΩ (Max.) @ VGS=10V 

- Reliable and Rugged 

- Lead Free and Green Devices Available (RoHS Compliant) 

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Top View SOT-223 

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## **Applications** 

- Power Management for Boost Converters. 

- Synchronous Rectifiers for SMPS. 

- LED Backlighting. 

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N-Channel MOSFET<br>**----- End of picture text -----**<br>


## **Ordering and Marking Information** 

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SM1A11NS Package Code<br>     V : SOT-223<br>Assembly Material<br>Operating Junction Temperature Range<br>Handling Code      C : -55  to 150  [o] C<br>Temperature Range Handling Code<br>Package Code      TR : Tape & Reel (2500ea/reel)<br>Assembly Material<br>     G : Halogen and Lead Free Device<br>PE | |<br>1A11N<br>SM1A11NS  V: XXXXX - Lot Code<br>XXXXX<br>Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate<br>termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-<br>free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER<br>defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight<br>in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).<br>**----- End of picture text -----**<br>


SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

_www.sinopowersemi.com_ 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2013 

## **SM1A11NSV** 

## **®** sinopower MA 

**Absolute Maximum Ratings** (TA = 25°C Unless Otherwise Noted) 

|**Symbol**<br>~~a~~|**Parameter**<br>|**Parameter**<br>|**Rating**<br>|**Unit**<br>|
|---|---|---|---|---|
|**Common Ratings**<br><br>~~ae~~<br>~~a~~|||||
|VDSS<br>~~es~~<br>~~a~~|Drain-Source Voltage<br>~~es~~<br>||100<br>~~es~~<br>~~ae~~<br>|V<br>~~es~~<br>~~ae~~<br>~~ee~~|
|VGSS<br>~~es~~<br>~~aee~~|Gate-Source Voltage<br>~~es~~<br>~~ee~~||±25<br>~~es~~<br>~~ae~~<br>~~ee~~||
|TJ<br>~~aee~~|Maximum Junction Temperature<br>~~ee~~||150<br>~~ae~~<br>~~ee~~|°C<br>~~ae~~<br>~~ee~~|
|TSTG<br>~~ee~~<br>~~a~~|Storage Temperature Range<br>~~ee~~<br>~~ee~~||-55 to 150<br>~~ee~~<br>~~ee~~||
|IS<br>~~ee~~<br>~~a~~|Diode Continuous Forward Current<br>~~ee~~<br>~~ee~~|TA=25°C<br>~~ee~~<br>~~ee~~|4<br>~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~|
|ID<br>~~a~~<br>~~PR~~|Continuous Drain Current<br>~~ee~~<br>|TA=25°C<br>~~ee~~<br>~~ee eee~~<br>|6<br>~~ee~~<br>~~eee~~<br>|A<br>~~ee~~<br>~~eee~~<br>|
|||TA=70°C<br>~~ee~~<br>~~ee eee~~<br>|4.8<br>~~ee~~<br>~~eee~~<br>||
|IDM<br>a<br>~~PR~~|Pulsed Drain Current<br>~~ee~~<br>|TA=25°C<br>~~ee eee~~<br>|24<br>~~eee~~<br>|A<br>~~eee~~<br>|
|PD<br>~~PRpe~~|Maximum Power Dissipation<br>~~ee~~<br>~~pe~~<br>~~ee~~|TA=25°C<br>~~ee eee~~<br>~~pe~~|3.5<br>~~eee~~<br>~~pe~~|W<br>~~eee~~<br>~~pe~~|
|||TA=70°C<br>~~pe~~<br>~~ee~~|2.2<br>~~pe~~<br>~~ee~~||
|RθJA<br>c<br>~~[Ee~~<br>~~a~~|Thermal Resistance-Junction to Ambient<br>~~[Ee~~<br>~~es~~|t≤10s<br>~~[Ee~~<br>~~es~~|35<br>~~[Ee~~<br>~~ee~~|°C/W<br>~~[Ee~~<br>~~ee~~|
|||Steady State<br>~~[Ee~~<br>~~es~~|70<br>~~[Ee~~<br>~~ee~~|°C/W<br>~~[Ee~~<br>~~ee~~|
|IAS<br>b<br>~~a~~|Avalanche Current, Single pulse<br>~~es~~|L=0.5mH<br>~~es~~|12<br>~~ee ~~|A<br> ~~ee~~|
|EAS<br>b<br>~~a~~|Avalanche Energy, Single pulse|L=0.5mH|36|mJ|



Note a：Pulse width limited by max. junction temperature. 

Note b：UIS tested and pulse width limited by maximum junction temperature 150[o] C (initial temperature Tj=25[o] C). Note c：Surface Mounted on 1in[2] pad area. 

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**®** sinopower MA 

## **SM1A11NSV** 

## **Electrical Characteristics** (TA = 25°C Unless Otherwise Noted) 

|~~PR~~||||||||
|---|---|---|---|---|---|---|---|
|**Symbol**<br>~~PR~~|**Parameter**|**Test Conditions**||**Min.**|**Typ.**|**Max.**|**Unit**|
|**Static Characteristics**<br>~~PR~~<br>~~PR~~||||||||
|BVDSS<br>~~PR~~|Drain-Source Breakdown Voltage|VGS=0V, IDS=250µA||100|-|-|V|
|IDSS<br>~~PRi~~<br>~~PR~~|Zero Gate Voltage Drain Current|VDS=80V, VGS=0V<br>TJ=85°C<br>~~po~~||-<br>~~po~~|-<br>~~po~~|1<br>~~po~~|µA|
||||TJ=85°C<br>~~po~~|-<br>~~po~~|-<br>~~po~~|30<br>~~po~~||
|VGS(th)<br>~~PR~~|Gate Threshold Voltage|VDS=VGS, IDS=250µA||2|3|4|V|
|IGSS<br>~~PR~~<br>~~a~~<br>~~FR~~|Gate Leakage Current<br>|VGS=±25V, VDS=0V<br>||-<br>|-<br>|±100<br>|nA<br>|
|RDS(ON)<br>d <br>~~FR~~|Drain-Source On-state Resistance<br>|VGS=10V, IDS=6A<br>||-<br>|37<br>|45<br>|mΩ<br>|
|**Diode Characteristics**<br>~~FR~~||||||||
|VSD<br>d<br>~~a~~<br>~~a~~|Diode Forward Voltage<br>|ISD=4A, VGS=0V<br><br>~~a~~||-<br><br>~~es oe~~|0.8<br><br>~~oe~~|1.3<br>|V<br>|
|trr<br>~~es~~<br>~~a~~|Reverse Recovery Time<br>~~es~~|ISD=4A, dlSD/dt=100A/µs<br>~~es~~<br>~~a~~<br>~~|~~||-<br>~~es~~<br>~~es oe~~|31<br>~~es~~<br>~~oe~~<br>~~ft~~|-<br>~~es~~<br>~~ft~~<br>~~ft~~|ns<br>~~es~~<br>~~ft~~|
|Qrr<br>~~es~~<br>~~a~~|Reverse Recovery Charge<br>~~es~~|||-<br>~~es~~<br>~~es oe~~<br>~~|~~|50<br>~~es~~<br>~~oe~~<br>~~|~~<br>~~ft~~|-<br>~~es~~<br>~~|~~<br>~~ft~~<br>~~ft~~|nC<br>~~es~~<br>~~|~~<br>~~ft~~|
|**Dynamic Characteristics**<br>e<br>~~a~~<br>~~es oe~~<br>~~a~~<br>~~ft~~<br>~~ft~~<br>~~PR~~||||||||
|RG<br>~~PR~~<br>~~re~~<br>~~ee~~|Gate Resistance<br>~~ee~~|VGS=0V,VDS=0V,f=1MHz<br>~~|~~||-<br>~~|~~|2.5<br>~~|~~<br>~~ft~~|-<br>~~|~~<br>~~ft~~|Ω|
|Ciss<br>~~PR~~<br>~~re~~<br>~~ee~~<br>~~ee~~|Input Capacitance<br>~~ee~~|VGS=0V,<br>VDS=30V,<br>Frequency=1.0MHz<br>~~|~~<br>~~|~~<br>~~—~~<br>~~ee~~<br>~~ft~~||-<br>~~|~~|1160<br>~~|~~<br>~~ft~~<br>~~|~~|1500<br>~~|~~<br>~~ft~~<br>~~|~~|pF|
|Coss<br>~~re~~<br>~~ee~~<br>~~ee~~<br>~~es~~|Output Capacitance<br>~~ee~~|||-<br>~~|~~<br>~~|~~<br>~~—~~~~**|**~~|90<br>~~|~~<br>~~ft~~<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~ft~~<br>~~|~~<br>~~|~~||
|Crss<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~|||-<br>~~|~~<br>~~—~~~~**|**~~<br>~~ft~~|45<br>~~ft~~<br>~~|~~<br>~~|~~<br>~~ft~~<br>~~|~~|-<br>~~ft~~<br>~~|~~<br>~~|~~<br>~~ft~~<br>~~|~~||
|td(ON)<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|Turn-on Delay Time<br>~~ee~~|VDD=30V, RL=30Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~—~~<br>~~ee~~<br>~~ft~~<br>~~—~~<br>~~—~~<br>~~ft~~||-<br>~~—~~~~**|**~~<br>~~ft~~<br>~~—|~~|15<br>~~|~~<br>~~ft~~<br>~~|~~<br>~~||~~|27<br>~~|~~<br>~~ft~~<br>~~|~~|ns|
|tr<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-on Rise Time<br>~~ee~~|||-<br>~~— ~~~~**|**~~<br>~~ft~~<br>~~—|~~<br>~~—|~~|8<br>~~ft~~<br>~~|~~<br>~~||~~<br>~~||~~|15<br>~~ft~~<br>~~|~~||
|td(OFF)<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-off Delay Time<br>~~ee~~|||-<br>~~—|~~<br>~~—|~~<br>~~ft~~|29<br>~~|~~<br>~~||~~<br>~~||~~<br>~~ft~~<br>~~ft~~|53<br>~~|~~<br>~~ft~~<br>~~ft~~||
|tf<br>~~ee~~<br>~~ee~~|Turn-off Fall Time<br>~~ee~~|||-<br>~~— |~~<br>~~—|~~<br>~~ft~~|9<br>~~| |~~<br>~~||~~<br>~~ft~~<br>~~ft~~|17<br>~~ft~~<br>~~ft~~||
|**Gate Charge Characteristics**<br>e<br>~~— | |~~<br>~~ee~~<br>~~ee~~<br>~~ft~~<br>~~ft~~<br>~~a~~<br>~~ee~~<br>~~|~~<br>~~|~~<br>~~ee~~||||||||
|Qg<br>~~a~~<br>~~ee~~<br>~~a~~|Total Gate Charge<br>~~ee~~|VDS=50V, VGS=10V,<br>IDS=6A<br>~~|~~<br>~~—~~<br>~~|~~||-<br>~~|~~<br>~~—~~<br>||23<br>~~|~~<br>~~|~~<br>~~|~~|33<br>~~|~~<br>~~|~~|nC|
|Qgs<br>~~a~~<br>~~ee~~<br>~~a~~|Gate-Source Charge<br>~~ee~~|||-<br>~~|~~<br>~~—~~<br>||6<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~<br>~~|~~||
|Qgd<br>~~ee~~<br>~~a~~|Gate-Drain Charge|||-<br>~~—~~<br>|<br>~~|~~|5.5<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~<br>~~|~~||



Note d：Pulse test ; pulse width≤300µs, duty cycle≤2%. Note e：Guaranteed by design, not subject to production testing. 

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## **SM1A11NSV** 

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## **Typical Operating Characteristics** 

**Power Dissipation** 

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4.0<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>T =25 o C<br>A<br>0.0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)<br>- Power (W)<br>tot<br>P<br>**----- End of picture text -----**<br>


**Drain Current** 

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7<br>6<br>5<br>4<br>3<br>2<br>1<br>TA=25 o C,VG=10V<br>0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


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Safe Operation Area<br>100<br>10<br>300µs<br>1 1ms<br>10ms<br>100ms<br>0.1<br>1s<br>DC<br>TA=25OC<br>0.01 A<br>0.01 0.1 1 10 100 600<br>VDS - Drain - Source Voltage (V)<br>Rds(on) Limit<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Thermal Transient Impedance** 

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3<br>1 Duty = 0.5<br>0.2<br>0.1<br>0.05<br>0.1<br>0.02<br>0.01<br>0.01<br>Single Pulse<br>Mounted on 1in 2  pad<br>1E-3 RθJA :35oC/W<br>1E-4 1E-3 0.01 0.1 1 10 100<br>Square Wave Pulse Duration (sec)<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


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## **SM1A11NSV** 

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## **Typical Operating Characteristics (Cont.)** 

**Output Characteristics** 

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24<br>VGS=5,6,7,8,9,10V<br>20<br>4.5V<br>16<br>12<br>8<br>4<br>4V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>VDS - Drain - Source Voltage (V)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


## **Gate-Source On Resistance** 

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140<br>I =6A<br>DS<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>3 4 5 6 7 8 9 10<br>VGS - Gate - Source Voltage (V)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


**Drain-Source On Resistance** 

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70<br>60<br>50<br>V =10V<br>40 GS<br>30<br>20<br>10<br>0 4 8 12 16 20 24<br>ID - Drain Current (A)<br>Gate Threshold Voltage<br>[-]<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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Gate Threshold Voltage<br>1.6<br>I DS =250µA<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2 :<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (°C)<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


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## **SM1A11NSV** 

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®<br>**----- End of picture text -----**<br>


## **Typical Operating Characteristics (Cont.)** 

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Drain-Source On Resistance<br>**----- End of picture text -----**<br>


**Source-Drain Diode Forward** 

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2.5<br>V  = 10V<br>GS<br> I  = 6A<br>DS<br>2.0<br>1.5<br>1.0<br>0.5<br>RON@Tj=25oC: 37mΩ<br>0.0<br>-50 -25 0 25 50 75 100 125 150<br>  Tj - Junction Temperature (°C)<br>Capacitance<br>1750<br>Frequency=1MHz<br>1500<br>1250<br>Ciss<br>1000<br>750<br>500<br>250<br>Crss Coss<br>0<br>0 8 16 24 32 40<br>——_<br>VDS - Drain-Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


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30<br>10<br>T =150oC<br>j<br>T =25oC<br>1 j<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD - Source - Drain Voltage (V)<br>Gate Charge<br>10<br>V = 50V<br>9 DS<br> I = 6A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 4 8 12 16 20 24<br>|<br>QG - Gate Charge (nC)<br> - Source Current (A)<br>IS<br> - Gate-source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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**SM1A11NSV** 

## **®** sinopower WA 

## **Avalanche Test Circuit and Waveforms** 

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VDS L tp VDSX(SUS)<br>VDS<br>DUT<br>f IAS aN<br>RG<br>VDD<br>VDD<br>EAS<br>tp IL<br>0.01 Ω<br>tAV<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

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VDS<br>RD<br>DUT<br>VGS<br>RG<br>f VDD<br>tp<br>ge<br>**----- End of picture text -----**<br>


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VDS<br>90%<br>10%<br>VGS<br>td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


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**®** sinopower WN 

## **SM1A11NSV** 

## **Package Information** 

## **SOT-223** 

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D<br>b2<br>SEE<br>| | VIEW A<br>; [|]<br>Hat i} Uj<br>| | |<br>e c<br>Ls tL<br>e1<br>|<br>GAUGE PLANE<br>SEATING PLANE<br>L<br>b<br>a nal<br>VIEW A<br>SYM ee MILLIMETERS SOT-223 INCHES RECOMMENDED LAND PATTERN 3.1<br>BO<br>L MIN. MAX. MIN. MAX.<br>A - 1.80 - 0.071<br>a A1 0.02 es 0.10 0.001 es 0.004 ODS<br>A2 1.50 1.70 0.059 0.067<br>b 0.66 0.84 0.026 0.033<br>aes<br>b2 2.90 3.10 0.114 0.122<br>aesee<br>a c 0.23 0.33 0.009 ee 0.013 5.98<br>a D 6.30 6.70 0.248 0.264<br>a E es 6.70 7.30 0.264 ee 0.287<br>E1 3.30 3.70 0.130 0.146<br>e 2.30 BSC 0.091 BSC<br>e1 4.60 BSC 0.181 BSC<br>L 0.75 - 0.030 -<br>aPf 0 es 0° 10° ee 0° 10° 0.81 2.3<br>Note : 1. Follow from JEDEC TO-261 AA.<br>           2. Dimension D and E1 are determined at the outermost extremes UNIT: mm<br>               of the plastic exclusive of mold flash, tie bar burrs, gate burrs,<br>               and interlead flash, but including any mismatch between the top<br>               and bottom of the plastic body.<br>°<br>0<br>E1 E<br>A2 A<br>A1<br>0.25<br>1.12<br>1.12<br>**----- End of picture text -----**<br>


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## **SM1A11NSV** 

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®<br>**----- End of picture text -----**<br>


## **Carrier Tape & Reel Dimensions** 

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t o pgéd OD0 P0 P2 jo P1 ele A<br>iiresiee K0 B A0 OD1 B A<br>SECTION A-A<br>SECTION B-B<br>d<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**SOT-223**|320.0±2.00|2.00<br>50 MIN.|12.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.201.5 MIN.|1.5 MIN.<br>20.2 MIN.|20.2 MIN. 12.00±0.30 1.75|0.30 1.75±0.10|5.50±0.05|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.00±0.10|8.00±0.10|2.00±0.50<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.001.5 MIN.|1.5 MIN.<br>0.6+0.00<br>-0.40|0.6+0.00<br>-0.406.90±0.20|7.50±0.20|2.10±0.20|



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sinopower **®** YX 

**SM1A11NSV** 

## **Taping Direction Information** 

## **SOT-223** 

USER DIRECTION OF FEED 

## **Classification Profile** 

Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2013 

_www.sinopowersemi.com_ 

10 

**®** 

## **SM1A11NSV** 

## **Classification Reflow Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



**Package Volume mm[3 ] Volume mm** ~~**[3 ]**~~ **Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~=—=SS===~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~———~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~——=—~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C **Customer Service Sinopower Semiconductor, Inc.** 5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan TEL: 886-3-5635818 Fax: 886-3-5642050 Copyright  Sinopower Semiconductor, Inc. Sinopower Semiconductor, Inc.Sinopower Semiconductor, Inc. 11 _www.sinopowersemi.com_ 

Copyright  Sinopower Semiconductor, Inc. Sinopower Semiconductor, Inc.Sinopower Semiconductor, Inc. Rev. A.1 - December, 2013
Updated at February 12, 2024
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