SM1A11NSF

SM1A11NSF, Single MOSFET, N Channel, 100V, TO-220

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Manufacturer: Sinopower
Product type: Single MOSFETs
Cfg.: N
BV(V): 100
Package: View
VGS (±V): 25
Tube: View
VTH(V) typ.: 3
ID (A) TA=25: 4.5
ID (A) TC=25: 24
Rg (Ω) typ.: 2.5
Ciss (pF) typ.: 1160
Coss (pF) typ.: 90
Crss (pF) typ.: 45
Quality Report: View
RON(mΩ max) 10V max.: 45
Delivery and price
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Current stock	10+
Lead time	30 days
Datasheet
sinopower UN **®** 

**SM1A11NSF ®** 

N-Channel Enhancement Mode MOSFET pO 

## **Features** 

## **Pin Description** 

- 100V/24A, 

- RDS(ON)= 45mΩ (Max.) @ VGS=10V 

- Reliable and Rugged 

- Lead Free and Green Devices Available 

   - (RoHS Compliant) 

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Top View of TO-220<br>**----- End of picture text -----**<br>


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## **Applications** 

- High Speed Switching. 

- High Voltage Synchronous Rectification for 

- Industrial Application. 

- Fully Avalanche Rated. 

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N-Channel MOSFET<br>**----- End of picture text -----**<br>


**Ordering and Marking Information** 

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SM1A11NS Package Code<br>    F : TO-220<br>Assembly Material Operating Junction Temperature Range<br>    C : -55  to 150  [o] C<br>Handling Code<br>Handling Code<br>    TU : Tube (50ea/tube)<br>Temperature Range<br>Assembly Material<br>Package Code G : Halogen and Lead Free Device<br>E e,<br>SM1A11NS  F : SM1A11N XXXXX - Lot Code<br>XXXXX<br>Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate<br>termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-<br>free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER<br>defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight<br>in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).<br>**----- End of picture text -----**<br>


SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

_www.sinopowersemi.com_ 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2013 

**SM1A11NSF** 

## **®** sinopower MA 

**Absolute Maximum Ratings** (TA = 25°C Unless Otherwise Noted) 

|**Symbol**<br>~~a~~|**Parameter**<br>~~a~~|**Parameter**<br>~~a~~|**Rating**<br>~~a~~|**Unit**<br>~~a~~|
|---|---|---|---|---|
|**Common Ratings**|||||
|VDSS<br>~~|~~|Drain-Source Voltage<br>~~|~~||100<br>~~|~~|V<br>~~|~~<br>|
|VGSS<br>~~|~~<br>~~a~~|Gate-Source Voltage<br>~~|~~<br>||±25<br>~~|~~<br>||
|TJ<br>~~SS~~|Maximum Junction Temperature<br>~~SS~~||150<br>~~ee~~|°C<br>~~ee~~|
|TSTG<br>~~SS~~<br>~~a~~|Storage Temperature Range<br>~~SS ~~<br>~~ee~~||-55 to 150<br> ~~ee~~<br>~~ee~~||
|IS<br>~~a~~|Diode Continuous Forward Current<br>~~a~~|TC=25°C<br>~~a~~|12<br>~~a~~|A|
|ID<br>~~[~~<br>~~PR~~|Continuous Drain Current<br>~~[~~<br>~~ee~~<br>|TC=25°C<br>~~[~~<br>~~ee~~|24<br>~~[~~<br>~~ee~~|A<br>~~ee~~|
|||TC=100°C<br>~~[~~<br>~~ee~~|15<br>~~[~~<br>~~ee~~||
|IDM<br>a<br>~~PR~~|Pulsed Drain Current<br>~~ee~~<br>|TC=25°C<br>~~ee~~|72<br>~~ee~~||
|PD<br>~~PRa~~|Maximum Power Dissipation<br>~~ee~~<br>~~a~~<br>~~ee~~|TC=25°C<br>~~ee~~|54<br>~~ee~~<br>~~el~~|W<br>~~ee~~<br>~~el~~|
|||TC=100°C<br>~~ee~~|21<br>~~el~~<br>~~ee~~||
|RθJC<br>~~a~~|Thermal Resistance-Junction to Case<br>~~es~~||2.3<br>~~es~~|°C/W<br>~~es~~|
|ID<br>~~a~~|Continuous Drain Current<br>~~ee~~|TA=25°C<br>~~ee~~<br>~~ee~~|4.5<br>~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~|
|||TA=70°C<br>~~ee~~<br>~~ee~~|3.6<br>~~ee~~<br>~~ee~~||
|PD<br>~~el~~<br>~~a~~|Maximum Power Dissipation<br>~~ee~~<br>~~el~~<br>~~ee~~|TA=25°C<br>~~ee ~~<br>~~el~~<br>~~ee~~|2<br> ~~ee~~<br>~~el~~<br>~~eee~~|W<br>~~ee~~<br>~~el~~<br>~~eee~~|
|||TA=70°C<br>~~el~~<br>~~ee~~|1.25<br>~~el~~<br>~~eee~~||
|RθJA<br> <br>~~a~~|Thermal Resistance-Junction to Ambient<br>~~ee ~~||62.5<br> ~~eee~~|°C/W<br>~~eee~~|
|IAS<br>b<br>~~a~~|Avalanche Current, Single pulse|L=0.5mH|12|A|
|EAS<br>b<br>~~a~~|Avalanche Energy, Single pulse|L=0.5mH|36|mJ|



Note a：Pulse width limited by max. junction temperature. Note b：UIS tested and pulse width limited by maximum junction temperature 150[o] C (initial temperature Tj=25[o] C). 

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## **SM1A11NSF** 

## **®** sinopower MA 

## **Electrical Characteristics** (TA = 25°C Unless Otherwise Noted) 

|~~PR~~||||||||
|---|---|---|---|---|---|---|---|
|**Symbol**<br>~~PR~~|**Parameter**|**Test Conditions**||**Min.**|**Typ.**|**Max.**|**Unit**|
|**Static Characteristics**<br>~~PR~~<br>~~PR~~||||||||
|BVDSS<br>~~PR~~|Drain-Source Breakdown Voltage<br>|VGS=0V, IDS=250µA<br>||100<br>|-<br>|-<br>|V<br>|
|IDSS<br>~~PRee~~<br>~~PR~~|Zero Gate Voltage Drain Current<br>~~ee~~|VDS=80V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~pT~~||-<br>~~ee~~|-<br>~~ee~~|1<br>~~ee~~|µA<br>~~ee~~|
||||TJ=85°C<br>~~ee~~<br>~~pT~~|-<br>~~ee~~<br>~~pT~~|-<br>~~ee~~<br>~~pT~~|30<br>~~ee~~<br>~~pT~~||
|VGS(th)<br>~~PR~~|Gate Threshold Voltage|VDS=VGS, IDS=250µA<br>~~pT~~||2<br>~~pT~~|3<br>~~pT~~|4<br>~~pT~~|V|
|IGSS<br>~~PR~~<br>~~I~~<br>~~PR~~|Gate Leakage Current|VGS=±25V, VDS=0V<br>~~pT~~||-<br>~~pT~~|-<br>~~pT~~|±100<br>~~pT~~|nA|
|RDS(ON)<br>c <br>~~PR~~|Drain-Source On-state Resistance|VGS=10V, IDS=12A||-|37|45|mΩ|
|**Diode Characteristics**<br>~~PRa~~<br>~~es~~||||||||
|VSD<br>c<br>~~a~~<br>~~a~~|Diode Forward Voltage<br>~~es~~|ISD=12A, VGS=0V<br>~~a~~||-<br>~~oe~~|0.8<br>~~oe~~|1.3|V|
|trr<br>~~a~~<br>~~es~~<br>~~a~~|Reverse Recovery Time<br>~~es~~<br>~~es~~|ISD=12A, dlSD/dt=100A/µs<br>~~es~~<br>~~a~~<br>~~|~~||-<br>~~es~~<br>~~oe~~<br>~~|~~<br>~~|~~|31<br>~~es~~<br>~~oe~~<br>~~|~~|-<br>~~es~~|ns<br>~~es~~|
|Qrr<br>~~es~~<br>~~a~~|Reverse Recovery Charge<br>~~es~~|||-<br>~~es~~<br>~~oe~~<br>~~|~~<br>~~|~~|40<br>~~es~~<br>~~oe~~<br>~~|~~|-<br>~~es~~|nC<br>~~es~~|
|**Dynamic Characteristics**<br>d<br>~~a~~<br>~~oe~~<br>~~a~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~PR~~||||||||
|RG<br>~~PR~~<br>~~re~~|Gate Resistance<br>~~ee~~|VGS=0V,VDS=0V,f=1MHz<br>~~|~~||-<br>~~|~~<br>~~|~~|2.5<br>~~|~~|-<br>~~|~~|Ω|
|Ciss<br>~~PR~~<br>~~re~~<br>~~ee~~|Input Capacitance<br>~~ee~~|VGS=0V,<br>VDS=30V,<br>Frequency=1.0MHz<br>~~|~~<br>~~|~~<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~Ff~~|1160<br>~~|~~<br>~~Ff|~~|1500<br>~~|~~<br>~~|~~|pF|
|Coss<br>~~re~~<br>~~ee~~<br>~~ee~~|Output Capacitance<br>~~ee~~|||-<br>~~|~~<br>~~|~~<br>~~Ff~~<br>~~|~~|90<br>~~|~~<br>~~Ff|~~<br>|-<br>~~|~~<br>~~|~~<br>||
|Crss<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~|||-<br>~~Ff~~<br>~~|ot~~<br>~~ptt~~|45<br>~~Ff |~~<br>~~ot~~<br>~~ptt~~|-<br>~~|~~<br>~~ot~~<br>~~ptt~~||
|td(ON)<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|Turn-on Delay Time<br>~~ee~~|VDD=30V, RL=30Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~|~~<br>~~ee~~<br>~~|~~||-<br>~~|ot~~<br>~~ptt~~<br>~~Ff~~|15<br>~~ot~~<br>~~ptt~~<br>~~Ff |~~|27<br>~~ot~~<br>~~ptt~~<br>~~|~~|ns|
|tr<br>~~es~~<br>~~ee~~<br>~~ee~~|Turn-on Rise Time<br>~~ee~~|||-<br>~~ot~~<br>~~ptt~~<br>~~Ff~~<br>~~|~~|8<br>~~ot~~<br>~~ptt~~<br>~~Ff |~~<br>|15<br>~~ot~~<br>~~ptt~~<br>~~|~~<br>||
|td(OFF)<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-off Delay Time<br>~~ee~~<br>~~ee~~|||-<br>~~ptt~~<br>~~Ff~~<br>~~|~~~~**|**~~<br>~~|~~|29<br>~~ptt~~<br>~~Ff |~~<br>~~**|**~~|53<br>~~ptt~~<br>~~|~~<br>~~**|**~~||
|tf<br>~~ee~~<br>~~ee~~|Turn-off Fall Time<br>~~ee~~|||-<br>~~Ff~~<br>~~|~~~~**|**~~<br>~~|~~|9<br>~~Ff |~~<br>~~**|**~~|17<br>~~|~~<br>~~**|**~~||
|**Gate Charge Characteristics**<br>d<br>~~**|**~~<br>~~ee~~<br>~~ee~~<br>~~|~~<br>~~a~~<br>~~ee~~<br>~~Ff~~||||||||
|Qg<br>~~a~~<br>~~ee~~|Total Gate Charge<br>~~ee~~|VDS=50V, VGS=10V,<br>IDS=12A<br>~~|~~||-<br>~~Ff~~<br>~~ee~~|23<br>~~Ff~~<br>~~ee~~|33<br>~~Ff~~<br>~~ee~~|nC|
|Qgs<br>~~a~~<br>~~ee~~<br>~~a~~|Gate-Source Charge<br>~~ee~~|||-<br>~~Ff~~<br>~~ee~~<br>~~|~~|6<br>~~Ff~~<br>~~ee~~<br>|-<br>~~Ff~~<br>~~ee~~<br>||
|Qgd<br>~~ee~~<br>~~a~~|Gate-Drain Charge|||-<br>~~ee~~<br>~~|tT~~|5.5<br>~~ee~~<br>~~tT~~|-<br>~~ee~~<br>~~tT~~||



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_www.sinopowersemi.com_ 

sinopower SR **®** 

**SM1A11NSF** 

## **Typical Operating Characteristics** 

**Power Dissipation** 

## **Drain Current** 

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60 28<br>24<br>50<br>20<br>40<br>16<br>30<br>12<br>20<br>8<br>10<br>4<br>TC=25 o C TC=25 o C,VG=10V<br>0 0<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C) Tj - Junction Temperature<br>Safe Operation Area Thermal Transient Impedance<br>300 2<br>1 Duty = 0.5<br>100<br>0.2<br>0.1<br>100µs 0.1 0.05<br>10 0.02<br>0.01<br>0.01<br>1ms<br>1<br>10ms<br>1E-3<br>DC<br>Single Pulse<br>TC=25oC RθJC :2.3 o C/W<br>0.1 A 1E-4 an an a<br>0.01 0.1 1 10 100 500 1E-6 1E-5 1E-4 1E-3 0.01 0.1<br>VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br>- Power (W)<br>tot<br>P - Drain Current (A)<br>ID<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


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## **SM1A11NSF** 

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®<br>**----- End of picture text -----**<br>


## **Typical Operating Characteristics (Cont.)** 

**Output Characteristics** 

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50<br>VGS=6,7,8,9,10V<br>40 5V<br>30<br>20<br>4.5V<br>10<br>4V<br>0<br>0 1 2 3 4 5 6<br>VDS - Drain - Source Voltage (V)<br>Gate-Source On Resistance<br>140<br>I =12A<br>DS<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>3 4 5 6 7 8 9 10<br>VGS - Gate - Source Voltage (V)<br> - Drain Current (A)<br>ID<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


**Drain-Source On Resistance** 

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90<br>75<br>60<br>45 V =10V<br>GS<br>30<br>15<br>0<br>0 8 16 24 32 40<br>ID - Drain Current (A)<br>Gate Threshold Voltage<br>[a]<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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Gate Threshold Voltage<br>1.6<br>I DS =250µA<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2 _<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (°C)<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


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## **SM1A11NSF** 

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®<br>**----- End of picture text -----**<br>


## **Typical Operating Characteristics (Cont.)** 

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Drain-Source On Resistance<br>2.5<br>V  = 10V<br>GS<br> I  = 12A<br>DS<br>2.0<br>1.5<br>1.0<br>0.5<br>RON@Tj=25oC: 37mΩ<br>0.0 ei<br>-50 -25 0 25 50 75 100 125 150<br>  Tj - Junction Temperature (°C)<br>Capacitance<br>1750<br>Frequency=1MHz<br>1500<br>1250<br>Ciss<br>1000<br>750<br>500<br>250<br>Crss Coss<br>0<br>0 8 16 24 32 40<br>VDS - Drain-Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


**Source-Drain Diode Forward** 

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100<br>10 T =150 o C<br>j<br>T =25 o C<br>j<br>1<br>0.1<br>0.0 0.3 0.6 0.9 1.2 1.5<br>VSD - Source - Drain Voltage (V)<br>Gate Charge<br>10<br>V = 50V<br>9 DS<br> I = 12A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 4 8 12 16 20 24<br>QG - Gate Charge (nC)<br> - Source Current (A)<br>IS<br> - Gate-source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2013 

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_www.sinopowersemi.com_ 

**SM1A11NSF** 

## **®** sinopower WA 

## **Avalanche Test Circuit and Waveforms** 

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VDS L tp VDSX(SUS)<br>VDS<br>DUT<br>f IAS aN<br>RG<br>VDD<br>VDD<br>EAS<br>tp IL<br>0.01 Ω<br>tAV<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

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VDS<br>RD<br>DUT<br>VGS<br>RG<br>f VDD<br>tp<br>ge<br>**----- End of picture text -----**<br>


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VDS<br>90%<br>10%<br>VGS<br>td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


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## **SM1A11NSF** 

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Package Information<br>TO-220<br>E A<br>E/2 A1 E1<br>7a<br>tl b e c A2<br>b2<br>SYM MILLIMETERS TO-220 INCHES RECOMMENDED LAND PATTERN<br>BOL MIN. MAX. MIN. MAX.<br>A 3.56 4.83 0.140 0.190 2.54<br>A1 0.51 1.40 0.020 0.055<br>A2 2.03 2.92 0.080 0.115<br>b 0.38 1.02 0.015 0.040<br>b2 1.14 1.78 0.045 0.070<br>c 0.36 0.61 0.014 0.024<br>D 14.22 16.51 0.560 0.650<br>D1 8.38 9.02 0.330 0.355 UNIT: mm<br>D2 12.19 13.65 0.480 0.537<br>E 9.65 10.67 0.380 0.420<br>E1 6.86 8.89 0.270 0.350<br>e 2.54 BSC 0.100 BSC<br>H1 5.84 6.86 0.230 0.270<br>L 12.70 14.73 0.500 0.580<br>L1 - 6.35 - 0.250<br>P 3.53 4.09 0.139 0.161<br>Q 2.54 3.43 0.100 0.135<br>ae<br>Note: Follow JEDEC TO-220 AB.<br>Copyright  Sinopower Semiconductor, Inc. 8 www.sinopowersemi.com<br>Rev. A.1 - December, 2013<br>R0.52<br>P<br>Q<br>H1<br>D2<br>D<br>D1<br>L1<br>L<br>**----- End of picture text -----**<br>


**®** sinopower VN 

**SM1A11NSF** 

## **Classification Profile** 

Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - December, 2013 

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**®** 

## **SM1A11NSF** 

## **Classification Reflow Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



**Package Volume mm[3 ] Volume mm** ~~**[3 ]**~~ **Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~=—=SS===~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~———~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~——=—~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C **Customer Service Sinopower Semiconductor, Inc.** 5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan TEL: 886-3-5635818 Fax: 886-3-5642050 Copyright  Sinopower Semiconductor, Inc. Sinopower Semiconductor, Inc.Sinopower Semiconductor, Inc. 10 _www.sinopowersemi.com_ 

Copyright  Sinopower Semiconductor, Inc. Sinopower Semiconductor, Inc.Sinopower Semiconductor, Inc. Rev. A.1 - December, 2013
Updated at February 12, 2024
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