SM1A00NSW

SM1A00NSW, Single MOSFET, N Channel, 100V, TO-247

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Manufacturer: Sinopower
Product type: Single MOSFETs
Cfg.: N
BV(V): 100
Package: View
VGS (±V): 25
Tube: View
VTH(V) typ.: 3
ID (A) TA=25: 18
ID (A) TC=25: 180
Rg (Ω) typ.: 1
Ciss (pF) typ.: 9550
Coss (pF) typ.: 980
Crss (pF) typ.: 595
RON(mΩ max) 10V max.: 4.2
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Datasheet
**®** sinopower WN 

## **SM1 A00NSW** 

N-Channel Enhancement Mode MOSFET 

## **Features** 

## **Pin Description** 

- 100V/180A[a] , 

- RDS(ON)= 4.2m Ω (Max.) @ VGS=10V 

- Reliable and Rugged 

- Lead Free and Green Devices Available (RoHS Compliant) 

- 100% UIS + R Tested g 

## **Applications** 

- Synchronous Rectification. 

- Power Management in Inverter Systems. 

- Motor Driver. 

- Uninterruptible Power Supply. 

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~S D [S]<br>G<br>Top View of TO-247<br>D<br>G<br>; :<br>S<br>**----- End of picture text -----**<br>


Top View of TO-247 

N-Channel MOSFET 

## **Ordering and Marking I nform ation** 

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SM1A00NS OO - O00 Package Code<br>    W : TO-247<br>Assembly Material Operating Junction Temperature Range<br>    C : -55  to 150  [o] C<br>Handling Code<br>Handling Code<br>Temperature Range     TU : Tube (30ea/tube)<br>Assembly Material<br>Le Package Code     G : Halogen and Lead Free Device<br>SM1A00NS   W : SM1A00NS XXXXX - Lot Code<br>XXXXX<br>**----- End of picture text -----**<br>


Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 

SINOPOWER reserves the right to m ake changes to im prove reliability or m anufacturability without notice, and advise custom ers to obtain the latest version of relevant inform ation to verify before placing orders. 

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**Absolute Maxim um  Ratings** (TA = 25 ° C Unless Otherwise Noted) 

|**Symbol**<br>~~a~~<br>~~Re~~|**Parameter**<br>~~a~~<br>|**Parameter**<br>~~a~~<br>|**Rating**<br>~~a~~<br>|**Unit**<br>~~a~~<br>|
|---|---|---|---|---|
|**Common Ratings**<br>~~Re~~|||||
|VDSS<br>~~Re————~~|Drain-Source Voltage<br>~~————~~||100<br>~~————~~|V<br>~~————~~<br>~~——————————e~~|
|VGSS<br>~~————~~<br>~~a——————————e~~|Gate-Source Voltage<br>~~————~~<br>~~——————————e~~||±25<br>~~————~~<br>~~——————————e~~||
|TJ<br>~~——————————e~~|Maximum Junction Temperature<br>~~——————————e~~||150<br>~~——————————e~~|°C<br>~~——————————e~~|
|TSTG<br>~~——————————e~~<br>~~a~~<br>~~7~~|Storage Temperature Range<br>~~——————————e~~<br>~~ee ee~~||-55 to 150<br>~~——————————e~~||
|IS<br>~~——————————e~~<br>~~a~~<br>~~7~~|Diode Continuous Forward Current<br>~~——————————e~~<br>~~ee ee~~|TC=25°C<br>~~——————————e~~<br>~~ee~~|80<br>~~——————————e~~|A<br>~~——————————e~~<br>|
|ID<br>~~7~~|Continuous Drain Current<br>~~ee ee~~|TC=25°C<br>~~ee~~|180<br>a||
|||TC=100°C<br>~~ee~~<br>~~Po~~|115<br>~~Po~~||
|IDM<br>b<br>~~a~~|Pulsed Drain Current<br>|TC=25°C<br>|400<br>||
|PD<br>~~ee~~<br>~~a~~|Maximum Power Dissipation<br>~~ee~~<br>~~ee~~|TC=25°C<br>~~ee~~|312<br>~~ee~~|W<br>~~ee~~|
|||TC=100°C<br>~~ee~~<br>~~po~~|125<br>~~ee~~<br>~~po~~||
|RθJC<br>~~a~~|Thermal Resistance-Junction to Case<br>~~ee~~|Steady State|0.4|°C/W|
|ID<br>~~a~~<br>~~ee~~|Continuous Drain Current<br>~~ee~~<br>~~ee~~|TA=25°C<br>~~ee~~|18<br>~~ee~~|A<br>~~ee~~|
|||TA=70°C<br>~~ee~~<br>~~Po~~|14.5<br>~~ee~~<br>~~Po~~||
|PD<br>~~a~~|Maximum Power Dissipation<br>~~a~~|TA=25°C<br>~~a~~|3.1<br>~~a~~|W<br>~~a~~|
|||TA=70°C<br>~~a~~<br>~~po~~|2<br>~~a~~<br>~~po~~||
|RθJA<br>~~a~~|Thermal Resistance-Junction to Ambient<br>~~a~~<br>~~a~~|Steady State|40|°C/W|
|IAS<br>c<br>~~a~~|Avalanche Current, Single pulse<br>~~a~~<br>~~ee~~|L=0.5mH<br>~~ee~~|57<br>~~ee~~|A<br>~~ee~~|
|EAS<br>c<br>~~a~~|Avalanche Energy, Single pulse|L=0.5mH|812|mJ|



Note a：Calculated continuous current based on maximum allowable junction temperature. Bonding wire limitation current is 120A. 

Note b；Pulse width limited by max. junction temperature. Note c：UIS tested and pulse width limited by maximum junction temperature 150[o] C (initial temperature Tj=25[o] C). 

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## **Electrical Characteristics** (TA = 25 ° C Unless Otherwise Noted) 

|~~PR~~||||||||
|---|---|---|---|---|---|---|---|
|**Symbol**<br>~~PR~~|**Parameter**|**Test Conditions**||**Min.**|**Typ.**|**Max.**|**Unit**|
|**Static Characteristics**<br>~~PR~~<br>~~PR~~||||||||
|BVDSS<br>~~PR~~|Drain-Source Breakdown Voltage<br>|VGS=0V, IDS=250µA<br><br>~~ee~~||100<br><br>~~ee~~|-<br><br>|-<br><br>|V<br>|
|IDSS<br>~~PRee~~<br>~~HR~~|Zero Gate Voltage Drain Current<br>~~ee~~|VDS=80V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~eepT~~||-<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>|1<br>~~ee~~<br>|µA<br>~~ee~~|
||||TJ=85°C<br>~~ee~~<br>~~eepT~~|-<br>~~ee~~<br>~~eepT~~|-<br>~~ee~~<br>~~pT~~|30<br>~~ee~~<br>~~pT~~||
|VGS(th)<br>~~HR~~<br>~~PR~~|Gate Threshold Voltage|VDS=VGS, IDS=250µA<br>~~eepT~~||2<br>~~eepT~~|3<br>~~pT~~|4<br>~~pT~~|V|
|IGSS<br>~~HR~~<br>~~PR~~<br>~~PR~~|Gate Leakage Current<br>|VGS=±25V, VDS=0V<br>~~eepT~~<br>||-<br>~~eepT~~<br>|-<br>~~pT~~<br>|±100<br>~~pT~~<br>|nA<br>|
|RDS(ON)<br>d <br>~~PR~~<br>~~PR~~|Drain-Source On-state Resistance<br>|VGS=10V, IDS=40A<br>||-<br>|3.5<br>|4.2<br>|mΩ<br>|
|**Diode Characteristics**<br>~~PR~~||||||||
|VSD<br>d<br>~~a~~<br>~~a~~|Diode Forward Voltage<br>|ISD=20A, VGS=0V<br><br>~~a~~||-<br><br>~~oe~~|0.8<br><br>~~oe~~|1.3<br><br>~~el~~|V<br><br>~~el~~|
|trr<br>~~es~~<br>~~a~~|Reverse Recovery Time<br>~~es~~|ISD=40A, dlSD/dt=100A/µs<br>~~es~~<br>~~a~~<br>~~|~~||-<br>~~es~~<br>~~oe~~<br>~~|~~<br>~~|~~|56<br>~~es~~<br>~~oe~~<br>~~|~~|-<br>~~es~~<br>~~el~~|ns<br>~~es~~<br>~~el~~|
|Qrr<br>~~es~~<br>~~a~~|Reverse Recovery Charge<br>~~es~~|||-<br>~~es~~<br>~~oe~~<br>~~|~~<br>~~|~~|136<br>~~es~~<br>~~oe~~<br>~~|~~|-<br>~~es~~<br>~~el~~|nC<br>~~es~~<br>~~el~~|
|**Dynamic Characteristics**<br>e<br>~~a~~<br>~~oe el~~<br>~~a~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~ee~~||||||||
|RG<br>~~a~~<br>~~ee~~|Gate Resistance<br>~~ee~~|VGS=0V,VDS=0V,f=1MHz<br>~~|~~||-<br>~~|~~<br>~~|~~|1<br>~~|~~|-<br>~~|~~|Ω|
|Ciss<br>~~ee~~<br>~~ee~~|Input Capacitance<br>~~ee~~|VGS=0V,<br>VDS=30V,<br>Frequency=1.0MHz<br>~~|~~<br>~~|~~<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~Ff~~|9550<br>~~|~~<br>~~Ff~~|12400<br>~~|~~<br>~~Ff~~|pF|
|Coss<br>~~ee~~<br>~~ee~~<br>~~ee~~|Output Capacitance<br>~~ee~~|||-<br>~~|~~<br>~~|~~<br>~~Ff~~<br>~~|~~|980<br>~~|~~<br>~~Ff~~<br>|-<br>~~|~~<br>~~Ff~~<br>||
|Crss<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~|||-<br>~~Ff~~<br>~~||~~<br>~~pf~~|595<br>~~Ff~~<br>~~|~~<br>~~pf~~|-<br>~~Ff~~<br>~~|~~<br>~~pf~~||
|td(ON)<br>~~ee~~<br>~~es~~<br>~~ee~~|Turn-on Delay Time<br>~~ee~~|VDD=30V, RL=30Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~|~~<br>~~ee~~<br>~~|~~||-<br>~~||~~<br>~~pf~~|47<br>~~|~~<br>~~pf~~|85<br>~~|~~<br>~~pf~~|ns|
|tr<br>~~es~~<br>~~ee~~<br>~~ee~~|Turn-on Rise Time<br>~~ee~~|||-<br>~~|~~<br>~~pf~~<br>~~Ff~~<br>~~|~~|33<br>~~|~~<br>~~pf~~<br>~~Ff~~<br>|60<br>~~|~~<br>~~pf~~<br>~~Ff~~<br>||
|td(OFF)<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-off Delay Time<br>~~ee~~<br>~~ee~~|||-<br>~~pf~~<br>~~Ff~~<br>~~|~~~~**|**~~<br>~~|~~|160<br>~~pf~~<br>~~Ff~~<br>~~**|**~~|290<br>~~pf~~<br>~~Ff~~<br>~~**|**~~||
|tf<br>~~ee~~<br>~~ee~~|Turn-off Fall Time<br>~~ee~~|||-<br>~~Ff~~<br>~~|~~~~**|**~~<br>~~|~~|100<br>~~Ff~~<br>~~**|**~~|180<br>~~Ff~~<br>~~**|**~~||
|**Gate Charge Characteristics**<br>e<br>~~**|**~~<br>~~ee~~<br>~~ee~~<br>~~|~~<br>~~a~~<br>~~ee~~<br>~~Ft~~||||||||
|Qg<br>~~a~~<br>~~ee ee~~|Total Gate Charge<br>~~ee~~<br>~~ee~~|VDS=50V, VGS=10V,<br>IDS=40A<br>~~ee~~<br>~~|~~<br>~~|~~||-<br>~~Ft~~<br>~~|~~|215<br>~~Ft~~<br>|300<br>~~Ft~~<br>|nC|
|Qgs<br>~~a~~<br>~~ee ee~~<br>~~a~~|Gate-Source Charge<br>~~ee~~<br>~~ee~~|||-<br>~~Ft~~<br>~~|tT~~<br>~~|~~|61<br>~~Ft~~<br>~~tT~~<br>|-<br>~~Ft~~<br>~~tT~~<br>||
|Qgd<br>~~ee ee~~<br>~~a~~|Gate-Drain Charge<br>~~ee~~|||-<br>~~|~~<br>~~|tt~~|62<br><br>~~tt~~|-<br><br>~~tt~~||



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## **SM1 A00NSW** 

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## **Typical Operating Characteristics** 

**Power Dissipation** 

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350<br>300<br>250<br>200<br>150<br>100<br>50<br>T =25 o C<br>C<br>0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)<br>- Power (W)<br>tot<br>P<br>**----- End of picture text -----**<br>


**Drain Current** 

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140<br>120<br>100<br>80<br>60<br>40<br>20<br>TC=25 o C,VG=10V<br>0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Safe Operation Area** 

**Thermal Transient Impedance** 

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800 3<br>1 Duty = 0.5<br>0.2<br>100 0.1<br>0.05<br>0.1<br>0.02<br>100 µ s<br>10 0.01<br>0.01<br>1ms<br>1 10ms<br>1E-3 Single Pulse<br>DC<br>0.1 TC=25oC 1E-4 R θ JC :0.4oC/W<br>0.01 0.1 1 10 100 500 1E-6 1E-5 1E-4 1E-3 0.01 0.1 0.5<br>VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


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## **SM1 A00NSW** 

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## **Typical Operating Characteristics ( Cont.)** 

**Output Characteristics** 

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240<br>VGS=6,7,8,9,10V<br>5.5V<br>200<br>160<br>120<br>80 5V<br>40<br>4.5V<br>0<br>0 1 2 3 4 5<br>VDS - Drain - Source Voltage (V)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


## **Gate-Source On Resistance** 

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18<br>I =40A<br>DS<br>15<br>12<br>9<br>6<br>3<br>0<br>3 4 5 6 7 8 9 10<br>VGS - Gate - Source Voltage (V)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


**Drain-Source On Resistance** 

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5.0<br>4.5<br>4.0<br>V =10V<br>3.5 GS<br>3.0<br>2.5<br>2.0<br>0 40 80 120 160 200<br>ID - Drain Current (A)<br>Gate Threshold Voltage<br>[a]<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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Gate Threshold Voltage<br>1.6<br>I DS =250 µ A<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2 _<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (°C)<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


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## **Typical Operating Characteristics ( Cont.)** 

**Source-Drain Diode Forward** 

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Drain-Source On Resistance Source-Drain Diode Forward<br>3.0 200<br>V  = 10V<br>GS<br>100<br> I  = 40A<br>DS<br>2.5<br>2.0 o<br>T =150 C<br>10 j<br>1.5 T =25oC<br>j<br>1.0<br>1<br>0.5<br>RON@Tj=25oC: 3.3m Ω<br>0.0 i 0.1<br>-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>  Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)<br>Capacitance Gate Charge<br>16000 10<br>Frequency=1MHz 9 V DS = 50V<br>14000  I DS = 40A<br>8<br>12000<br>7<br>10000 Ciss 6<br>8000 5<br>4<br>6000<br>3<br>4000<br>2<br>2000 Coss<br>1<br>Crss<br>0 0<br>0 8 16 24 32 40 0 40 80 120 160 200 240<br>VDS - Drain-Source Voltage (V) QG - Gate Charge (nC)<br> - Source Current (A)<br>IS<br>Normalized On Resistance<br>C - Capacitance (pF)<br> - Gate-source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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## **Avalanche Test  Circuit  and W aveform s** 

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VDS<br>L<br>DUT<br>RG<br>VDD<br>tp IL<br>0.01 Ω<br>**----- End of picture text -----**<br>


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VDSX(SUS)<br>tp<br>VDS<br>IAS<br>VDD<br>EAS<br>tAV<br>**----- End of picture text -----**<br>


## **Sw it ching Tim e Test Circuit and W aveform s** 

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VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>ef<br>tp<br>**----- End of picture text -----**<br>


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VDS<br>90%<br>10%<br>VGS<br>td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


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## **Disclaim er** 

Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. 

All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. 

In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. 

The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. 

The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. 

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Copyright  Sinopow er Sem iconductor, Inc. Rev. A.1 - March, 2015 

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**SM1 A00NSW** 

## **Package I nform at ion** 

## **TO-247** 

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E A<br>_<br>E2 / 2 A2 4 S<br>Q D1<br>e E2 |<br>D E1<br>Z<br>D D<br>E E<br>C C<br>L1<br>a PLATING (b1, b3, b5) BASE METAL<br>b2<br>b4<br>L C hx] 0 C1<br>b<br>C (b, b2, b4)<br>A1<br>LJ e a<br>P P1 D2<br>**----- End of picture text -----**<br>


## SECTION C-C, D-D, E-E 

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TO-247<br>SYMB MILLIMETERS INCHES RECOMMENDED LAND PATTERN<br>O PE<br>L MIN. MAX. MIN. MAX.<br>—— A 4.7 5.31 0.185 0.209<br>A1 2.21 2.59 0.087 0.102 5.46<br>A2 1.5 2.49 0.059 0.098<br>———— — ———————<br>——— D 20.8 ee 21.46 0.819 0.845 ®<br>E 15.49 16.26 0.610 | 0.640<br>E2 4.32 5.49 0.170 0.216<br>————<br>a e be 5.46 BSC [a] [-——— 0.215 BSC<br>a L 19.81 20.32 0.780 0.800 UNIT: mm<br>rc L1 - ee 4.5 - 0.177<br>—— P 3.56 3.66 0.140 0.144<br>———— Q ee 5.38 6.2 0.212 0.244<br>S 6.15 BSC 0.242 BSC<br>b 0.99 1.4 0.039 0.055<br>———— b1 0.99 1.35 0.039 0.053<br>b2 1.65 2.39 0.065 0.094<br>————<br>———— b3 1.65 2.34 0.065 0.092<br>eee b4 2.59 3.43 0.102 TT 0.135<br>I b5 2.59 /-———— 3.38  es 0.102 0.133<br>—— c 0.38 0.89 0.015 0.035<br>c1 0.38 0.84 0.015 0.033<br>D1 13.08 - 0.515 -<br>—————— — |<br>Pf D2 0.51 1.35 0.020 TT 0.053<br>E1 13.46 - 0.530 -<br>-— /-——— ee<br>— P1 - ee 7.4 a - 0.291<br>1.76<br>**----- End of picture text -----**<br>


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## **Classificat ion Profile** 

Copyright  Sinopow er Sem iconductor, Inc. Rev. A.1 - March, 2015 

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**®** 

## **SM1 A00NSW** 

## **Classification Reflow  Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 

**Package Volume mm[3 ] Volume mm[3 ] Thickness <350** ≥ **350** <2.5 mm 235 ° C 220 ° C ≥ 2.5 mm 220 ° C 220 ° C ~~SS~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 ° C 260 ° C 260 ° C 1.6 mm – 2.5 mm 260 ° C 250 ° C 245 ° C ≥ 2.5 mm 250 ° C 245 ° C 245 ° C ~~———————~~ **Reliabilit y Test Prog ram Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245 ° C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100 % RH, 2atm, 121 ° C ~~————~~ TCT JESD-22, A104 500 Cycles, -65 ° C~150 ° C **Custom er Service** 

## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan 

TEL: 886-3-5635818 Fax: 886-3-5642050 

_ww w.sinopowersem i.com_ 

11 

Copyright  Sinopow er Sem iconductor, Inc. Rev. A.1 - March, 2015
Updated at February 12, 2024
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