SKM800GA176D

IGBT Module, Trench, Single, 830 A, 2 V, 150 °C, Module

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Manufacturer: SEMIKRON
Product type:
Transistor Polarity:N Channel; DC Collector Current:830A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.7kV; Transistor Cas
SVHC: No SVHC (15-Jun-2015)
Product Range: SEMITRANS 4
IGBT Technology: IGBT 3 [Trench]
IGBT Termination: Stud
Power Dissipation: -
IGBT Configuration: Single
Transistor Mounting: Panel
Transistor Polarity: N Channel
DC Collector Current: 830A
Power Dissipation Pd: -
Transistor Case Style: Module
Operating Temperature Max: 150°C
Junction Temperature Tj Max: 150°C
Continuous Collector Current: 830A
Collector Emitter Voltage Max: 1.7kV
Collector Emitter Voltage V(br)ceo: 1.7kV
Collector Emitter Saturation Voltage: 2V
Collector Emitter Saturation Voltage Vce(on): 2V

Delivery and price
Units per pack	5
Price	331.98 €
Current stock	10+
Lead time	30 days

Datasheet

## **SKM 800GA176D** 

||||||< >><br>=><br>=<|< >><br>=><br>=<|||||**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**<br>**IGBT**<br>||**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**<br>**IGBT**<br>||**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**<br>**IGBT**<br>||**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**<br>**IGBT**<br>||**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**<br>**IGBT**<br>||T, =|<br>||<br>||25 °C,|**Values**<br> unless otherwise|otherwise specified|specified<br>||specified<br>||**Units**<br>specified|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||AF<br>=a<br>¢||,||=<br><ilee<br>BeSe<br>| ea<br>ra|||||||\ccs<br>Io<br>loam|||T, =25°C<br>T,= 150 °C<br>lopm=2Xlonom||T, =<br>25°C<br>~~T, = 80°C~~||||1700<br>830<br>~~590~~<br>1200||||Vv<br>A<br>~~A~~<br>A|
|||||||||||||~~a~~||||||||||||||
|||**SEMITRANS® 4**|||||||||tose|||Voc = 1200 V; Veg <br>Voges < 1700V|< 20V;|T,= 125°C||||10||||ys|
|Trench IGBT Modules|||||Trench IGBT Modules||||||**Inverse Diode**<br>lp<br>T, = 150 °C|||||T, = 25°C||||630||||A|
|||||||||||||||||T, = 80°C||||440||||A|
||||||||||||||||||||||||||
|**SKM 800GA176D**|||||||||||les|||t,<br>= 10 ms; sin.||T, = 150 °C||||3600||||A|
||||||||||||**Module**||||||||||||||
||||||||||||| vRMs)|||||||||500||||A|
||||||||||||||||||||||||||
||||||||||||Tig|||||||||-40... +125||||°C|
|**Features**|||||||||||Visol|||AC, 1 min.||||||4000||||Vv|
|e||Homogeneous Si|||||||||||||||||||||||
|e||Trench = Trenchgate technology|||||||||**Characteristics**|||||T, =|||25 °C,|unless otherwise specified|||||
|°||Vcesat with positivetemperature<br>coefficient|||||||||**Symbol**<br>**IGBT**||||**Conditions**||||||**min.**|**typ.**|**max.**||||**Units**|
|**Typical Applications***<br>High<br>short circuit capability, <br>° Fgh<br>papiity<br>~~limiting to 6 x |,~~||||||||self|||Veet)<br>logs<br>Voeo|||=<br>=<br>Vor=Voge: Ie=24mA<br>Voe=9ViVoe=Voes||1)=25°C<br>T, = 25°C|||5,2|58<br>1|64<br>4<br>1,2|||Vv<br>mA<br>V|
|e||AC inverter||drives mains|||575 -|||||||||T, = 125 °C||||0,9|1,1|||Vv|
|**Remarks**<br>750V AC<br>e Public transport <br>~~Wind~~<br>~~power~~<br>~~iY~~<br>~~Pp~~|||||(auxiliary||syst.)||||ror<br>Vce(sat|||Voge = 15V<br>=<br>lonom = 800A, Veg|=<br> = 15V|T, = 25°C<br>T,= 125°C<br>~~5p~~<br> T= 25°Corintey,<br>T,= 125°C chiptey,||||1,7<br>2,5<br>2<br>2,45|2,1<br>2,45<br>2,9|||maQ<br>moQ<br>V<br>Vv|
|Inc<br>< 500A<br>ren|||A|limited for<br>T**r**ominal<br>Terminal”|||||=||Ties<br>|c.,||||Vog=25,Veg=0V||f=1MHz||||39,6<br>2,2||||nF<br>nF|
||||||||||||Cres|||||||||2,5||||nF|
||||||||||||Q.|||Vg = -8V...+15V||||||4800||||nc|
||||||||||||tan)|||||||||230||||ns|
||||||||||||t,|||Reon = 32||Veg = 1200V||||90||||ns|
||||||||||||Eon|||||I= 600A||||335||||mJ|
||||||||||||tao|||Roo= 32||T, = 125 °C||||1030||||ns|
||||||||||||t;|||||Voge = + 15V||||160||||ns|
||||||||||||i|||||||||245||||mJ|
||||||||||||Ring-c)|||per IGBT|||||||0,04|||K/W|
|||**GA**|||||||||||||||||||||||



© by SEMIKRON 

28-06-2010 GIL 

1 

**SKM 800GA176D** 

**==> picture [362 x 50] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||||
|---|---|---|---|---|---|---|---|
|Characteristics|
|Symbol|Conditions|min.|typ.|max.|Units|
|Inverse Diode|
|Ve=V|lenom|= 600A;|Voe=OV|T,=25°C|1,6|1,9|V|

**----- End of picture text -----**<br>


## **SEMITRANS[®] 4** 

## Trench IGBT Modules 

**Module** 

**SKM 800GA176D** 

## **Features** 

This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. 

## **Typical Applications*** 

* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. 

## **Remarks** 

**==> picture [16 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
GA<br>**----- End of picture text -----**<br>


© by SEMIKRON 

28-06-2010 GIL 

2 

**SKM 800GA176D** 

**==> picture [534 x 202] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||||
|---|---|---|---|---|---|---|
|Z|
|th|
|Symbol|Conditions|Values|Units|
|<——|||
|Z|
|th(j-c)l|
|a|R;|i=1|28|mk/W|
|<=|SS|ee|R;|i=2|9,5|mk/W|
|«|R;|i=3|2,17|mk/W|
|tau,|i=1|0,0447|s|
|g|R;|i=4|0,33|mk/W|
|tau,|i=2|0,02|s|
|tau,|i=3|0,0015|s|
|SEMITRANS|[®]|4|tau,|i=4|0,0025|s|
|Z|
|th(j-c)D|
|Trench IGBT Modules|R;|i=1|46|mk/W|
|R,|i=2|17|mk/W|
|R;|i=3|5,9|mk/W|
|R;|i=4|1,1|mk/W|
|SKM 800GA176D|tau,|i=1|0,05|s|

**----- End of picture text -----**<br>


## **Features** 

**==> picture [123 x 316] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||||
|---|---|---|---|---|---|---|
|Typical Applications*|
|e|AC|inverter|drives|mains|
|750|V AC|
|e|Public|transport|(auxiliary|
|e|Wind|power|
|Remarks|
|©|Ipc|<|500|A|limited|for|
|100|°C|
|GA|

**----- End of picture text -----**<br>


~~LT~~ 3 28-06-2010 GIL © by SEMIKRON 

## **SKM 800GA176D** 

Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' 

Fig. 3 Typ. turn-on /-off energy = f (IC) 

Fig. 5 Typ. transfer characteristic 

Fig. 2 Rated current vs. temperature IC = f (TC) 

Fig. 4 Typ. turn-on /-off energy = f (RG) 

Fig. 6 Typ. gate charge characteristic 

© by SEMIKRON 

28-06-2010 GIL 

4 

**SKM 800GA176D** 

Fig. 7 Typ. switching times vs. IC 

Fig. 9 Transient thermal impedance 

Fig. 11 Typ. CAL diode peak reverse recovery current 

Fig. 8 Typ. switching times vs. gate resistor RG 

Fig. 10 Typ. CAL diode forward characteristic 

Fig. 12 Typ. CAL diode peak reverse recovery charge 

© by SEMIKRON 

28-06-2010 GIL 

5 

**SKM 800GA176D** 

File no. E 63 532 

UL Recognized 

~~Co~~ 6 28-06-2010 GIL © by SEMIKRON

Updated at March 31, 2026

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