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SKM300GB12E4
IGBT Module, Half Bridge, 422 A, 1.85 V, 125 °C, Module
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- Manufacturer: SEMIKRON
- Product type: IGBT Modules
- IGBT Technology: IGBT 4 [Trench]
- IGBT Termination: Stud
- IGBT Configuration: Half Bridge
- Transistor Mounting: Panel
- Transistor Polarity: Dual NPN
- DC Collector Current: 422A
- Transistor Case Style: Module
- Operating Temperature Max: 125°C
- Junction Temperature Tj Max: 125°C
- Continuous Collector Current: 422A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.85V
- Collector Emitter Saturation Voltage Vce(on): 1.85V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 109.62 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**SKM300GB12E4** ~~ST~~ ## **SEMITRANS[®] 3** ## IGBT4 Modules ## **SKM300GB12E4** ## **Features** - IGBT4 = 4. generation medium fast trench IGBT (Infineon) - CAL4 = Soft switching 4. generation CAL-diode - Isolated copper baseplate using DBC technology (Direct Bonded Copper) - Increased power cycling capability - With integrated gate resistor - For higher switching frequenzies up to 12kHz - UL recognized, file no. E63532 ## **Typical Applications*** - AC inverter drives - UPS ## **Remarks** - Case temperature limited to Tc = 125°C max. - Recommended Top = -40 ... +150°C - Product reliability results valid for Tj = 150°C |**Absolute Maximum Ratings**| |---| |**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**| |**IGBT**| |VCES<br>Tj= 25 °C<br>1200<br>V<br>IC<br>Tj= 175 °C<br>Tc= 25 °C<br>422<br>A<br>Tc= 80 °C<br>324<br>A<br>ICnom<br>300<br>A<br>ICRM<br>ICRM= 3xICnom<br>900<br>A<br>VGES<br>-20 ... 20<br>V<br>tpsc<br>VCC= 800 V<br>VGE≤ 15 V<br>VCES≤ 1200 V<br>Tj= 150 °C<br>10<br>µs<br>Tj<br>-40 ... 175<br>°C<br>**Inverse diode**<br>~~iee~~<br>~~ee~~<br>~~ee~~<br>~~TO~~| |IF<br>Tj= 175 °C<br>Tc= 25 °C<br>353<br>A<br>Tc= 80 °C<br>264<br>A<br>~~—~~<br>~~pop~~| |IFnom<br>300<br>A| |IFRM<br>IFRM= 3xIFnom<br>900<br>A<br>IFSM<br>tp= 10 ms, sin 180°, Tj= 25 °C<br>1548<br>A<br>Tj<br>-40 ... 175<br>°C<br>**Module**<br>It(RMS)<br>Tterminal= 80 °C<br>500<br>A<br>Tstg<br>-40 ... 125<br>°C<br>Visol<br>AC sinus 50 Hz, t = 1 min<br>4000<br>V<br>~~|~~<br>~~OS~~<br>~~pfee~~<br>~~a~~| || |**Characteristics**| |**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**| |**IGBT**| |VCE(sat)<br>IC= 300 A<br>VGE= 15 V<br>chiplevel<br>Tj= 25 °C<br>1.85<br>2.10<br>V<br>Tj= 150 °C<br>2.25<br>2.45<br>V<br>VCE0<br>chiplevel<br>Tj= 25 °C<br>0.8<br>0.9<br>V<br>Tj= 150 °C<br>0.7<br>0.8<br>V<br>rCE<br>VGE= 15 V<br>chiplevel<br>Tj= 25 °C<br>3.50<br>4.00<br>m<br>Tj= 150 °C<br>5.17<br>5.50<br>m<br>VGE(th)<br>VGE=VCE, IC= 12 mA<br>5<br>5.8<br>6.5<br>V<br>ICES<br>VGE= 0 V<br>VCE= 1200 V<br>Tj= 25 °C<br>4.0<br>mA<br>Tj= 150 °C<br>mA<br>Cies<br>VCE= 25 V<br>VGE= 0 V<br>f = 1 MHz<br>17.6<br>nF<br>Coes<br>f = 1 MHz<br>1.16<br>nF<br>Cres<br>f = 1 MHz<br>0.94<br>nF<br>QG<br>VGE= - 8 V...+ 15 V<br>1700<br>nC<br>RGint<br>Tj= 25 °C<br>2.5<br><br>td(on)<br>VCC= 600 V<br>IC= 300 A<br>VGE= ±15 V<br>RG on= 1.5<br>RG off= 1.5<br>di/dton= 6100 A/µs<br>di/dtoff= 3000 A/µs<br>Tj= 150 °C<br>220<br>ns<br>tr<br>Tj= 150 °C<br>44<br>ns<br>Eon<br>Tj= 150 °C<br>27<br>mJ<br>td(off)<br>Tj= 150 °C<br>520<br>ns<br>tf<br>Tj= 150 °C<br>117<br>ns<br>Eoff<br>Tj= 150 °C<br>39<br>mJ<br>Rth(j-c)<br>per IGBT<br>0.11<br>K/W<br>~~ee ee~~<br>~~_~~<br>~~pp~~<br>~~EE~~<br>~~—~~<br>~~=~~<br>~~pf~~<br>~~Se~~<br>~~EE~~<br>~~—~~<br>~~ee~~<br>~~eeee~~<br>~~ee~~<br>~~=~~<br>~~-~~<br>~~rs~~<br>~~pf~~<br>~~|~~<br>~~es~~ ee<br>~| G off tf di/dton = 6100 A/µs Tj = 150 °C 117 ns di/dtoff = 3000 A/µs Eoff Tj = 150 °C 39 mJ Rth(j-c) per IGBT 0.11 K/W ~~gle. | es~~ ee **GB** ~~ah~~ ~ ~~|~~ **© by SEMIKRON Rev. 3 – 21.08.2013 1** **SKM300GB12E4** ~~iiee~~ **SEMITRANS[®] 3** IGBT4 Modules ## **SKM300GB12E4** ## **Features** - IGBT4 = 4. generation medium fast trench IGBT (Infineon) - CAL4 = Soft switching 4. generation CAL-diode - Isolated copper baseplate using DBC technology (Direct Bonded Copper) |**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**Inverse diode**|**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**Inverse diode**|**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**Inverse diode**|**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**Inverse diode**|**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**Inverse diode**| |---|---|---|---|---| |VF= VEC|IF= 300 A<br>VGE= 0 V<br>chiplevel|Tj= 25 °C|2.17<br>2.49|V| |||Tj= 150 °C|2.11<br>2.42|V| |VF0|chiplevel|Tj= 25 °C|1.3<br>1.5|V| |||Tj= 150 °C|0.9<br>1.1|V| |rF<br>~~a~~|chiplevel|Tj= 25 °C|2.9<br>3.3|m| |~~a~~<br>~~Po~~||Tj= 150 °C<br>~~ee ee~~|4.0<br>4.4<br>~~ee~~|m| |IRRM<br>~~a~~<br>~~Po~~<br>~~ne~~|IF= 300 A<br>di/dtoff= 7300 A/µs<br>VGE= ±15 V<br>VCC = 600 V<br>~~ne~~|Tj= 150 °C<br>~~ee ee~~<br>~~ne~~|345<br>~~ee~~<br>~~ne~~|A<br>~~ne~~| |Qrr<br>~~Po~~<br>~~ne~~<br>~~|~~||Tj= 150 °C<br>~~ee ee~~<br>~~ne~~<br>~~ee~~|54<br>~~ee~~<br>~~ne~~<br>~~ee~~|µC<br>~~ne~~<br>~~ee~~| |Err<br>~~ne~~<br>~~|~~||Tj= 150 °C<br>~~ne~~<br>~~ee~~|23<br>~~ne~~<br>~~ee~~|mJ<br>~~ne~~<br>~~ee~~| |Rth(j-c)<br>~~ne~~<br>~~|~~<br>~~a~~|per diode<br>~~ne~~<br>~~ee ~~<br>||0.17<br>~~ne~~<br> ~~ee ~~<br>|K/W<br>~~ne~~<br> ~~ee~~<br>| |**Module**<br>~~ee~~||||| |LCE<br>~~ee~~<br>~~P|~~|~~ee~~<br>~~ee~~||15<br>20<br>~~ee~~<br>~~ee~~|nH<br>~~ee~~| |RCC'+EE'<br>~~ee~~<br>~~P|~~|terminal-chip<br>~~ee~~|TC= 25 °C<br>~~ee~~<br>~~ee~~|0.25<br>~~ee~~<br>~~ee~~|m<br>~~ee~~| |~~P|~~||TC= 125 °C<br>~~ee~~|0.5<br>~~ee~~|m| |Rth(c-s)<br>~~ee~~|per module<br>~~ee~~||0.02<br>0.038<br>~~ee~~|K/W<br>~~ee~~| |Ms<br>~~ee~~|to heat sink M6<br>~~ee~~||3<br>5<br>~~ee~~|Nm<br>~~ee~~| |Mt<br>~~ee~~|~~ee~~|to terminals M6<br>~~ee~~|2.5<br>5<br>~~ee~~|Nm<br>~~ee~~| |~~ee~~||~~ee~~|~~ee~~|Nm<br>~~ee~~| |w<br>~~ee~~<br>~~a~~|~~ee~~||325<br>~~ee~~|g<br>~~ee~~| - Increased power cycling capability - With integrated gate resistor - For higher switching frequenzies up to 12kHz - UL recognized, file no. E63532 ## **Typical Applications*** - AC inverter drives - UPS ## **Remarks** - Case temperature limited to Tc = 125°C max. - Recommended Top = -40 ... +150°C - Product reliability results valid for Tj = 150°C **==> picture [26 x 43] intentionally omitted <==** **----- Start of picture text -----**<br> |<br>GB<br>**----- End of picture text -----**<br> ~~SS~~ **2 Rev. 3 – 21.08.2013 © by SEMIKRON** **SKM300GB12E4** Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 5: Typ. transfer characteristic Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 6: Typ. gate charge characteristic **© by SEMIKRON** **Rev. 3 – 21.08.2013** **3** **SKM300GB12E4** Fig. 7: Typ. switching times vs. IC Fig. 9: Transient thermal impedance Fig. 11: CAL diode peak reverse recovery current Fig. 8: Typ. switching times vs. gate resistor RG Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 12: Typ. CAL diode peak reverse recovery charge **© by SEMIKRON** **Rev. 3 – 21.08.2013** **4** **SKM300GB12E4** ~~LO~~ **==> picture [62 x 126] intentionally omitted <==** **----- Start of picture text -----**<br> SEMITRANS 3<br>GB<br>**----- End of picture text -----**<br> This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. ~~Pe~~ **© by SEMIKRON Rev. 3 – 21.08.2013 5**
Updated at February 9, 2023
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