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SKM200GB12V
IGBT Module, Half Bridge, 311 A, 1.75 V, 175 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: SEMIKRON
- Product type:
- Transistor Polarity:Dual N Channel; DC Collector Current:311A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Tr
- No. of Pins: 7Pins
- Product Range: -
- IGBT Technology: V-IGBT
- IGBT Termination: Stud
- Power Dissipation: -
- IGBT Configuration: Half Bridge
- Transistor Mounting: Panel
- Transistor Polarity: Dual N Channel
- DC Collector Current: 311A
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Junction Temperature Tj Max: 175°C
- Continuous Collector Current: 311A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.75V
- Collector Emitter Saturation Voltage Vce(on): 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 200.42 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**SKM200GB12V** **SEMITRANS[®] 3** ## **SKM200GB12V** ## **Features** - V-IGBT = 6. Generation Trench V-IGBT (Fuji) - CAL4 = Soft switching 4. Generation CAL-diode - Isolated copper baseplate using DBC technology (Direct Copper Bonding) - UL recognized, file no. E63532 - Increased power cycling capability - With integrated gate resistor - Low switching losses at high di/dt ## **Typical Applications*** - AC inverter drives - UPS - Electronic welders ## **Remarks** • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° |**Absolute Maximum Ratings**| |---| |**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**| |**IGBT**| |VCES<br>Tj= 25 °C<br>1200<br>V| |IC<br>Tj= 175 °C<br>Tc= 25 °C<br>311<br>A<br>Tc= 80 °C<br>237<br>A| |ICnom<br>200<br>A| |ICRM<br>ICRM= 3xICnom<br>600<br>A<br>VGES<br>-20 ... 20<br>V<br>~~ee~~<br>~~ee~~| |tpsc<br>VCC= 720 V<br>VGE≤ 20 V<br>VCES≤ 1200 V<br>Tj= 125 °C<br>10<br>µs<br>Tj<br>-40 ... 175<br>°C<br>**Inverse diode**<br>IF<br>Tj= 175 °C<br>Tc= 25 °C<br>229<br>A<br>Tc= 80 °C<br>172<br>A<br>IFnom<br>200<br>A<br>IFRM<br>IFRM= 3xIFnom<br>600<br>A<br>IFSM<br>tp= 10 ms, sin 180°, Tj= 25 °C<br>990<br>A<br>Tj<br>-40 ... 175<br>°C<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~PYeee~~<br>~~|~~<br>~~ee ee~~<br>~~eT~~<br>~~ee~~<br>~~——~~<br>~~pp~~<br>~~a~~| |**Module**| |It(RMS)<br>Tterminal= 80 °C<br>500<br>A<br>Tstg<br>-40 ... 125<br>°C<br>Visol<br>AC sinus 50Hz, t = 1 min<br>4000<br>V<br>~~A~~<br>~~ee~~<br>~~ee~~<br>~~es~~| |**Characteristics**| |**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**| |**IGBT**| |VCE(sat)<br>IC= 200 A<br>VGE= 15 V<br>chiplevel<br>Tj= 25 °C<br>1.75<br>2.20<br>V<br>Tj= 150 °C<br>2.20<br>2.50<br>V<br>VCE0<br>Tj= 25 °C<br>0.94<br>1.04<br>V<br>Tj= 150 °C<br>0.88<br>0.98<br>V<br>rCE<br>VGE= 15 V<br>Tj= 25 °C<br>4.05<br>5.8<br>m<br>Tj= 150 °C<br>6.60<br>7.60<br>m<br>VGE(th)<br>VGE=VCE, IC= 8 mA<br>5.5<br>6<br>6.5<br>V<br>ICES<br>VGE= 0 V<br>VCE= 1200 V<br>Tj= 25 °C<br>0.1<br>0.3<br>mA<br>Tj= 150 °C<br>mA<br>~~|~~<br>~~es ee~~<br>~~eeee~~<br>~~————————~~<br>~~a OO~~<br>~~|~~<br>~~ee~~<br>~~ee~~| |Cies<br>f = 1 MHz<br>12.02<br>nF| |VCE= 25 V<br>VGE= 0 V<br>Coes<br>f = 1 MHz<br>1.18<br>nF<br>Cres<br>f = 1 MHz<br>1.178<br>nF<br>QG<br>VGE= - 8 V...+ 15 V<br>2210<br>nC<br>~~ee~~<br>~~ee~~<br>~~a OO~~| |RGint<br>3.8<br><br>td(on)<br>VCC= 600 V<br>IC= 200 A<br>VGE= ±15 V<br>RG on= 3<br>RG off= 3<br>di/dton= 7000 A/µs<br>di/dtoff= 2300 A/µs<br>du/dtoff= 6900 V/<br>µs<br>Tj= 150 °C<br>320<br>ns<br>tr<br>Tj= 150 °C<br>45<br>ns<br>Eon<br>Tj= 150 °C<br>14<br>mJ<br>td(off)<br>Tj= 150 °C<br>550<br>ns<br>tf<br>Tj= 150 °C<br>72<br>ns<br>Eoff<br>Tj= 150 °C<br>22<br>mJ<br>Rth(j-c)<br>per IGBT<br>0.14<br>K/W<br>~~a~~<br>~~|~~<br>~~ee ee ee~~<br>~~|~~<br>~~ee~~<br>~~ee~~<br>~~|~~<br>~~ee ee~~<br>~~|~~<br>~~**e**s~~<br>~~ee~~<br>~~a~~<br>~~e~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~es~~| **==> picture [16 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> GB<br>**----- End of picture text -----**<br> ~~Pe~~ **© by SEMIKRON Rev. 5 – 17.06.2011 1** **SKM200GB12V** **SEMITRANS[®] 3** ## **SKM200GB12V** ## **Features** - V-IGBT = 6. Generation Trench V-IGBT (Fuji) - CAL4 = Soft switching 4. Generation CAL-diode - Isolated copper baseplate using DBC technology (Direct Copper Bonding) |**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**Inverse diode**|**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**Inverse diode**|**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**Inverse diode**|**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**Inverse diode**|**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**Inverse diode**| |---|---|---|---|---| |VF= VEC|IF= 200 A<br>VGE= 0 V<br>chip|Tj= 25 °C|2.20<br>2.52|V| |||Tj= 150 °C|2.15<br>2.47|V| |VF0||Tj= 25 °C|1.3<br>1.5|V| |||Tj= 150 °C|0.9<br>1.1|V| |rF<br>~~a~~||Tj= 25 °C|4.5<br>5.1|m| |~~a~~<br>~~Po~~||Tj= 150 °C<br>~~ee ee~~|6.3<br>6.8<br>~~ee~~|m| |IRRM<br>~~a~~<br>~~Po~~<br>~~Po~~|IF= 200 A<br>di/dtoff= 5300 A/µs<br>VGE= ±15 V<br>VCC = 600 V|Tj= 150 °C<br>~~ee ee~~<br>~~ee~~|230<br>~~ee~~<br>~~ee~~|A| |Qrr<br>~~Po~~<br>~~Po~~<br>~~|~~||Tj= 150 °C<br>~~ee ee~~<br>~~ee~~<br>~~ee~~|30<br>~~ee~~<br>~~ee~~<br>~~ee~~|µC<br>~~ee~~| |Err<br>~~Po~~<br>~~|~~||Tj= 150 °C<br>~~ee ~~<br>~~ee~~|13<br> ~~ee~~<br>~~ee~~|mJ<br>~~ee~~| |Rth(j-c)<br>~~|~~<br>~~a~~|per diode<br>~~ee~~||0.26<br>~~ee ~~|K/W<br> ~~ee~~| |**Module**||||| |LCE<br>~~ee~~|~~ed~~||15<br>20|nH| |RCC'+EE'<br>~~ee~~<br>~~Po~~|terminal-chip<br>~~ed~~|TC= 25 °C<br>~~ed~~<br>~~ee ee~~|0.25<br>~~ee~~|m| |~~ee~~<br>~~Po~~||TC= 125 °C<br>~~ed~~<br>~~ee ee~~|0.5<br>~~ee~~|m| |Rth(c-s)<br>~~ee~~<br>~~Po~~|per module<br>~~ed~~<br>~~ee ee~~||0.02<br>0.038<br>~~ee~~|K/W| |Ms<br>~~a~~|to heat sink M6||3<br>5|Nm| |Mt<br>~~a~~||to terminals M6|2.5<br>5|Nm| |~~a~~||||Nm| |w<br>~~a~~<br>~~a~~|||325|g| - UL recognized, file no. E63532 - Increased power cycling capability - With integrated gate resistor - Low switching losses at high di/dt ## **Typical Applications*** - AC inverter drives - UPS - Electronic welders ## **Remarks** • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° ~~| 4]~~ **GB** ~~es~~ **2 Rev. 5 – 17.06.2011 © by SEMIKRON** **SKM200GB12V** Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 5: Typ. transfer characteristic Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 6: Typ. gate charge characteristic **© by SEMIKRON** **Rev. 5 – 17.06.2011** **3** **SKM200GB12V** Fig. 7: Typ. switching times vs. IC Fig. 9: Transient thermal impedance Fig. 11: CAL diode peak reverse recovery current Fig. 8: Typ. switching times vs. gate resistor RG Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 12: Typ. CAL diode peak reverse recovery charge **© by SEMIKRON** **Rev. 5 – 17.06.2011** **4** **SKM200GB12V** ~~LO~~ **==> picture [62 x 126] intentionally omitted <==** **----- Start of picture text -----**<br> SEMITRANS 3<br>GB<br>**----- End of picture text -----**<br> This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. ~~Pe~~ **© by SEMIKRON Rev. 5 – 17.06.2011 5**
Updated at March 31, 2026
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