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SKM200GB12T4
IGBT Module, Half Bridge, 313 A, 1.8 V, 175 °C, Module
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: SEMIKRON
- Product type:
- Transistor Polarity:Dual N Channel; DC Collector Current:313A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Tra
- No. of Pins: 7Pins
- Product Range: -
- IGBT Technology: IGBT 4 Fast [Trench]
- IGBT Termination: Stud
- Power Dissipation: -
- IGBT Configuration: Half Bridge
- Transistor Mounting: Panel
- Transistor Polarity: Dual N Channel
- DC Collector Current: 313A
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Junction Temperature Tj Max: 175°C
- Continuous Collector Current: 313A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.8V
- Collector Emitter Saturation Voltage Vce(on): 1.8V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 166.07 € |
| Current stock | 50+ |
| Lead time | 30 days |
Datasheet
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Updated at March 31, 2026