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SKM200GB125D
IGBT Module, Half Bridge, 200 A, 3.3 V, 150 °C, Module
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- Manufacturer: SEMIKRON
- Product type:
- Transistor Polarity:Dual N Channel; DC Collector Current:200A; Collector Emitter Saturation Voltage Vce(on):3.3V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Tra
- No. of Pins: 7Pins
- Product Range: -
- IGBT Technology: NPT IGBT [Ultrafast]
- IGBT Termination: Stud
- Power Dissipation: -
- IGBT Configuration: Half Bridge
- Transistor Mounting: Panel
- Transistor Polarity: Dual N Channel
- DC Collector Current: 200A
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 200A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 3.3V
- Collector Emitter Saturation Voltage Vce(on): 3.3V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 305.23 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **SKM 200GB125D** |||Ag<br>@<br>Sy<br>Zales<br>a|||**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**<br>||**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**<br>||**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**<br>||**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**<br>||**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**<br>||||T, = <br>||T, = <br>||25 °C,|**Values**<br> unless otherwise|otherwise specified|specified<br>||specified<br>||**Units**<br>specified| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||||||**IGBT**||||||||||||||| ||a<br>4al<br>.<br>apart<br>=<br>~~<br>yhi<br>@<br>is<br>ive|||||~~Voes~~<br>le|||~~T, = 25°C~~<br>T, = 150 °C||Tease = 25 °C<br>~~Tcase = 80 °C~~|||||~~1200~~<br>200<br>~~160~~||||~~Vv~~<br>A<br>~~A~~| |||lee<br>ff4|||~~lorm~~|||~~lcrm=2Xlcnom~~|||||||~~300~~||||~~A~~| |||**SEMITRANS® 3**|||tose|||Voc = 600 V; Veg <20V;<br>Vces < 1200 V||T,= 125°C|||||10||||ys| |Ultra Fast IGBT Modules|||||**Inverse Diode**<br>le<br>T, = 150 °C|||||Tease = 25 °C|||||200||||A| |||||||||||Tease = 80 °C|||||130||||A| ||||||||||||||||||||| |**SKM 200GB125D**|||||les|||t,<br>= 10 ms; sin.||T,|= 150 °C||||1440||||A| |**SKM 200GAL125D**|||||**Freewheeling Diode**||||||||||||||| |**SKM 200GAR125D**|||||lp|||T,=°C||T,|= 25°C||||200||||A| |||||||||||T,|= 80°C||||130||||A| ||||||||||||||||||||| |**Features**|||||**Module**<br>les|||t, = 10 ms;||T,|= 150 °C||||1440||||A| |e <br>e <br>e||Nchannel<br>, homogeneous Si<br> Low inductance case<br> Short tail current with low|||lyms)<br>T<br>~~4~~||||||||||500<br>40...+ 150<br>~~”~~||||A<br>°C| |||temperature dependence|||T tg||||||||||~40...+ 125||||°C| |+ <br>e<br>-||limiting to 6 x lenom<br> Fast& soft inverseCAL diodes<br>Isolated copper baseplate using<br>DCB DirectCopperBonding<br>Technology<br> Large clearance (13mm) and|||**Characteristics**<br>**Symbol**<br>**Conditions**<br>**IGBT**<br>|<br>~~Vee (th)~~<br>~~Voe = Voce: Ie =~~||||~~6 mA~~|||T, = <br>|||**min.**<br> 25 °C, <br>~~4,5~~|**typ.**<br>**max.**<br>**Units**<br> unless otherwise specified<br>|<br>~~5,5~~<br>~~6.5~~<br>~~Vv~~||||| |||creepage distance (20 mm)||||||Vez=OV.Vce=Veeg||7,|=25°C||||0,15|0,45|||| |**Typical Applications***<br>Switched<br>mod<br>lies<br>at<br>e<br>Switched<br>mode power supplies a<br>>20kHz<br>sw<br>e Resonant inverters up to 100 kHz|||||Voeo<br>Tor|||~~=~~<br>Voge = 15V||T, = 25°C<br>~~nae~~<br>~~==~~<br>T, = 25°C<br>T, = 125°C<br>~~j~~|||||1,5<br>12|1,75<br>14|||V<br>moQ<br>moa| |e||Inductive heating|||VcE(sat)|||lonom = 150A,Vee = 15VT)|||= °Cohiniey.|ohiniey.|||3,3|3,85|||v| |e||Electronic welders at f,,,> 20 KHZ||||Cj.,||||||||||10|13|||nF| ||||||Coes|||Vog = 25, Veg =|0V|f=|1 MHz||||1,5|2|||nF| ||||||Cres||||||||||0,8|1,2|||nF| ||||||Q.|||Vg = OV - +20V|||||||1300||||nc| ||||||||||||||||||||| ||||||taon)||||||||||75||||ns| ||||||t,|||Reon = 42||Voc =||600V|||36||||ns| ||||<br>||||Eon<br>ta(otn<br>t;|||Reon = 4 2||I= 150A<br>T,=125°C<br>Voge = £15V|||||14<br>420<br>25||||mJ<br>ns<br>ns| ||||||a||||||||||||||mJ| |||a<br>a|||Ringo)|||perIGBT||||||||0,09||KW||KW| |||**GB**<br>**GAL**<br>**GAR**|||||||||||||||||| © by SEMIKRON 04-05-2007 SEI 1 **SKM 200GB125D** |**Characteristics**<br>**Symbol**<br>**Conditions**<br>**Inverse Diode**<br>||||**min.**|**typ.**|**max.**|||**Units**| |---|---|---|---|---|---|---| ## **SEMITRANS[®] 3** ## Ultra Fast IGBT Modules ||||**Freewheeling Diode**|**Freewheeling Diode**| |---|---|---|---|---| |**SKM 200GB125D**||||| |**SKM 200GAL125D**||||| |**SKM 200GAR125D**||||| |||||| |||||| |||||| |**Features**|||Q,|di/dt = 5500 A/us| |-|Nchannel , homogeneous Si||~~Er~~|~~Vee = 0 Vs Voc~~| |-|Low inductance case|||| |e|Short tail current with low||**Module**|| ## **Typical Applications*** This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. **GB GAL GAR** ~~LT~~ 2 04-05-2007 SEI © by SEMIKRON ## **SKM 200GB125D** **Z** fy 4 Pe **th Symbol Conditions Values Units Z** = Z| |R, **th(j-c)l** i=1 60 mk/W > R; i=2 23 mk/W a aoe R; i=3 5,9 mk/W = ys R; j=4 1,1 mk/W ‘: **tau, i** =2= **0,0** 744087 **s** tau, i=3 0,002 s **SEMITRANS[®] 3** tau, i=4 0,0015 s **Z th(j-c)D** R; i=1 160 mk/W Ultra Fast IGBT Modules R, i=2 67 mk/W R; i=3 20 mk/W R; i=4 3 mk/W **SKM 200GB125D** tau, i=1 0,0536 s tau, i=2 0,0034 s **SKM 200GAL125D** tau, i=3 0,077 s **SKM 200GAR125D** tau, i=4 0,0003 s ## **Features** ## **Typical Applications*** **GB GAL GAR** ~~LT~~ 3 04-05-2007 SEI © by SEMIKRON ## **SKM 200GB125D** Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 5 Typ. transfer characteristic Fig. 2 Rated current vs. temperature IC = f (TC) **==> picture [139 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 4 Typ. turn-on /-off energy = f (RG)<br>**----- End of picture text -----**<br> Fig. 6 Typ. gate charge characteristic © by SEMIKRON 04-05-2007 SEI 4 ## **SKM 200GB125D** Fig. 7 Typ. switching times vs. IC Fig. 9 Transient thermal impedance Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery charge © by SEMIKRON 04-05-2007 SEI 5 **SKM 200GB125D** UL Recognized **==> picture [41 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> File 63 532<br>**----- End of picture text -----**<br> ~~Lo~~ 6 04-05-2007 SEI © by SEMIKRON
Updated at March 31, 2026
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