SKM195GB066D

IGBT Module, Half Bridge, 265 A, 1.45 V, 175 °C, Module

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Manufacturer: SEMIKRON
Product type:
Transistor Polarity:Dual N Channel; DC Collector Current:265A; Collector Emitter Saturation Voltage Vce(on):1.45V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:600V; Tran
No. of Pins: 7Pins
Product Range: -
IGBT Technology: IGBT 3 [Trench]
IGBT Termination: Stud
Power Dissipation: -
IGBT Configuration: Half Bridge
Transistor Mounting: Panel
Transistor Polarity: Dual N Channel
DC Collector Current: 265A
Power Dissipation Pd: -
Transistor Case Style: Module
Operating Temperature Max: 175°C
Junction Temperature Tj Max: 175°C
Continuous Collector Current: 265A
Collector Emitter Voltage Max: 600V
Collector Emitter Voltage V(br)ceo: 600V
Collector Emitter Saturation Voltage: 1.45V
Collector Emitter Saturation Voltage Vce(on): 1.45V

Delivery and price
Units per pack	10
Price	90.21 €
Current stock	10+
Lead time	30 days

Datasheet

## **SKM 195GB066D** 

|fi<br>——<br>oe|||f|**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**|**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**|**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**|**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**|**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**|Toase|=||20°C,|**Values**<br> unless otherwise|otherwise specified|specified|specified|**Units**<br>specified|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||**IGBT**||||||||||||||
|se<br>Mie|||le|||T, = 175 °C||T, =25°C||||265||||A|
|7,<br>1<br>a**l** allel||||||||T, =80°C||||200||||A|
|a<br>)|||lorm<br>lcrm=2Xlcnom<br>~~Mees |~~<br>tose<br>Veg = 360 V; Veg < 15V;|||||T= 150°C||||400<br>6||||A<br>us|
|**SEMITRANS® 2**|||**Inverse Diode**<br>Vces < 600 V||||||||||||||
|Trench IGBT Modules|||Ie|||T, = 175°C||T,= 25°C<br>T, = 80°C||||200<br>130||||A<br>A|
||||||||||||||||||
|**SKM195GB066D**|||**Module**<br>lesm|||t, = 10 ms; sin.||T, = 175 °C||||1400||||A|
||||las)|||||||||200||||A|
||||~~a~~||||||||||||||
||||Tog|||||||||-40... +125||||°C|
||||Visol|||AC, 1 min.||||||4000||||Vv|
|**Features**|||||||||||||||||
|« Homogeneous Si|||**Characteristics**|||||Toase|=||20°C,|unless otherwise specified|||||
|**Typical Applications***<br>e Trench = Trenchgate technology<br>° VE(sat)with positive<br>temperature coefficient<br>e High short circuit capability,<br>ae<br>self limiting to 6 x I¢|||**Symbol**<br>**IGBT**<br>Veet)<br>~~CES~~<br>VoE0||||**Conditions**<br>Vee=Vor: Io=3.2<br>mA<br>Voge<br>=9V,~~Vog = V,~~<br>~~GE~~<br>~~CE~~<br>~~CES~~||~~T, = 25°C~~<br>~~j~~<br>T, = 25°C<br>T, = 150 °C||||**min.**<br>5|**typ.**<br>58<br>~~0,13~~<br>0,9<br>0,85|**max.**<br>65<br>~~0,38~~<br>1<br>0,9||||**Units**<br>Vv<br>~~mA~~<br>V<br>Vv|
|e AC inverter drives|||Tor|||Voge = 15V||T, =25°C||||2,8|45|||mQ|
|**Remarks**<br>e UPS<br>~~e Electronic welders~~|||Voe(eat)|||lonom = 200A, Vge|T,= 150°C<br> = 15 VT, = 25°Copictey,<br>T,= 150°C oriptev.|||||4,3<br>1,45<br>1,7|6<br>19<br>2,1|||mQ<br>V<br>V|
|sank<br>e CaseeT FEL limited to<br>T,= 125°C max.,<br>product rel. results valid for|||Cies<br>C.<br>C<br>~~res~~|||Veg =25,Veg =0V||f=4 MHz||||12,3<br>077<br>037<br>~~,~~||||nF<br>nF<br>AF|
|T,<150°C<br>+ SC data: Use ofsoft Rg|||~~Qc~~|||~~Voge = -8V...+15V~~||||||~~1500~~||||~~nc~~|
|necessary!<br>e Take care ofover-voltage caused|||tom<br>|t.|||Reon =32||Voc= 300V||||160<br>68||||ns<br>ns|
|by stray induct.|||Eon<br>tor)|||Reo = 3 &||I= 200A<br>T,= 150 °C||||14<br>520||||mJ<br>ns|
||||t|||||Voge = -8V/+15V||||49||||ns|
||||E ott|||||||||8||||mJ|
||||Ring)|||perIGBT|||||||0,22||KW||KW|
|**GB**|||||||||||||||||



© by SEMIKRON 

22-03-2011 GIL 

1 

**SKM 195GB066D** 

## **SEMITRANS[®] 2** 

**==> picture [362 x 149] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|Characteristics|
|Symbol|||Conditions|||min.|typ.|max.|||Units|
|Inverse Diode|
|Ve=Vec_|—||lenom|_= 200A;yo Veg =OV|T=_ 25|one|°Cohipiev.|1,4|1,6|V|
|rr|T,|= 25°C|2,3|3|mQ|
|laRM||.|= 200A|T,|=|150|°C|100|A|
|Q,,|di/dt|= 2000 A/us|30|ie|
|E,|Voge|=|-8|V;|Veg|=|300 V|5,6|mJ|
|Ring-cyd|per diode|0,4|K/W|
|Module|

**----- End of picture text -----**<br>


## Trench IGBT Modules 

**SKM195GB066D** 

## **Features** 

This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. 

## **Typical Applications*** 

* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. 

## **Remarks** 

**==> picture [16 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
GB<br>**----- End of picture text -----**<br>


© by SEMIKRON 

22-03-2011 GIL 

2 

**SKM 195GB066D** 

|fi=<br>!<br>><br>“<br>Rae<br>,<br>2<br>he|**Zth**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Units**<br>**Zth(j-c)l**<br>**Zth(j-c)D**<br>|<br>|<br>R,<br>i=1<br>160<br>mk/W<br>R,<br>i=2<br>41<br>mk/W<br>R;<br>i=3<br>16<br>mk/W<br>R;<br>i=4<br>3<br>mk/W<br>tau,<br>i=1<br>0,0276<br>s<br>tau,<br>i=2<br>0,0406<br>s<br>tau,<br>i=3<br>0,001<br>s<br>tau,<br>i=4<br>0,0011<br>s<br>R;<br>i=1<br>250<br>mk/W<br>R,<br>i=2<br>110<br>mk/W<br>R;<br>i=3<br>35<br>mk/W<br>R;<br>i=4<br>5<br>mk/W<br>tau,<br>i=1<br>0,054<br>s<br>tau,<br>i=2<br>0,012<br>s<br>tau,<br>i=3<br>0,0015<br>s<br>tau,<br>i=4<br>0,0007<br>s|**Zth**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Units**<br>**Zth(j-c)l**<br>|<br>|<br>R,<br>i=1<br>160<br>mk/W<br>R,<br>i=2<br>41<br>mk/W<br>R;<br>i=3<br>16<br>mk/W<br>R;<br>i=4<br>3<br>mk/W<br>tau,<br>i=1<br>0,0276<br>s<br>tau,<br>i=2<br>0,0406<br>s<br>tau,<br>i=3<br>0,001<br>s<br>tau,<br>i=4<br>0,0011<br>s|
|---|---|---|
|**SEMITRANS® 2**|||
|||**Zth(j-c)D**<br>R;<br>i=1<br>250<br>mk/W<br>R,<br>i=2<br>110<br>mk/W<br>R;<br>i=3<br>35<br>mk/W<br>R;<br>i=4<br>5<br>mk/W<br>tau,<br>i=1<br>0,054<br>s<br>tau,<br>i=2<br>0,012<br>s<br>tau,<br>i=3<br>0,0015<br>s<br>tau,<br>i=4<br>0,0007<br>s|
||||
|Trench IGBT Modules|||
|**SKM195GB066D**|||
||||
|**Features**<br>e Homogeneous Si<br>e Trench = Trenchgate technology<br>° VcE(sat) with positive<br>temperature coefficient<br>e High short circuit capability,<br>self limiting to 6 x I¢|||
|**Typical Applications***<br>e AC inverter drives<br>e UPS<br>e<br>Electronic welders|||
|**Remarks**<br>e Case temperature limited to<br>T,= 125°C max.,<br>product rel. results valid for<br>T,<150°C<br>« SC data: Use ofsoft Rg<br>necessary!<br>e Take care ofover-voltage caused<br>by stray induct.|||



**GB** ~~s~~ 

~~LT~~ 3 22-03-2011 GIL © by SEMIKRON 

**SKM 195GB066D** 

Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' 

Fig. 3 Typ. turn-on /-off energy = f (IC) 

Fig. 5 Typ. transfer characteristic 

Fig. 2 Rated current vs. temperature IC = f (TC) 

Fig. 4 Typ. turn-on /-off energy = f (RG) 

Fig. 6 Typ. gate charge characteristic 

© by SEMIKRON 

22-03-2011 GIL 

4 

## **SKM 195GB066D** 

Fig. 7 Typ. switching times vs. IC 

Fig. 9 Transient thermal impedance of IGBT and Diode 

Fig. 11 Typ. CAL diode peak reverse recovery current 

Fig. 8 Typ. switching times vs. gate resistor RG 

Fig. 10 CAL diode forward characteristic 

Fig. 12 Typ. CAL diode recovered charge 

© by SEMIKRON 

22-03-2011 GIL 

5 

**SKM 195GB066D** 

UL recognized, file no. E 63 532 

~~LT~~ 6 22-03-2011 GIL © by SEMIKRON

Updated at March 31, 2026

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