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SKM145GB066D
IGBT Module, Half Bridge, 195 A, 1.45 V, 175 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: SEMIKRON
- Product type:
- Transistor Polarity:Dual N Channel; DC Collector Current:195A; Collector Emitter Saturation Voltage Vce(on):1.45V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:600V; Tran
- No. of Pins: 7Pins
- Product Range: -
- IGBT Technology: IGBT 3 [Trench]
- IGBT Termination: Stud
- Power Dissipation: -
- IGBT Configuration: Half Bridge
- Transistor Mounting: Panel
- Transistor Polarity: Dual N Channel
- DC Collector Current: 195A
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Junction Temperature Tj Max: 175°C
- Continuous Collector Current: 195A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Voltage V(br)ceo: 600V
- Collector Emitter Saturation Voltage: 1.45V
- Collector Emitter Saturation Voltage Vce(on): 1.45V
| Delivery and price | |
|---|---|
| Units per pack | 16 |
| Price | 63.45 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **SKM 145GB066D** |||fi|;||**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**|**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**|**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**|**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**|Toase= 20°C,|= 20°C,|= 20°C,|= 20°C,|**Values**<br>**Units**<br> unless otherwise specified|**Values**<br>**Units**<br> unless otherwise specified|**Values**<br>**Units**<br> unless otherwise specified|**Values**<br>**Units**<br> unless otherwise specified|**Values**<br>**Units**<br> unless otherwise specified| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||||||**IGBT**||||||||||||| |ae||De oy oe|||le|||T, = 175 °C|T=25°C||||195||||A| |re;<br>1||a**l** allel|||||||T,<br>=<br>80°C||||150||||A| |=<br>|||||loRM<br>~~Mes |~~<br>tose||~~|~~|~~|~~|lopm=2Xlonom<br>~~|~~<br>Veg = 360 V; Veg < 15V;|~~|~~<br>T= 150°C|~~|~~|~~|~~|~~|~~|300<br>~~|~~<br>6|~~|~~|~~|~~|~~|~~|A<br>~~|~~<br>us| |**SEMITRANS® **||**2**|||**Inverse Diode**<br>Vces < 600 V||||||||||||| |Trench IGBT Modules|||||le|||T,=175°C|T,<br>=<br>25°C<br>T, = 80°C||||150<br>100||||A<br>A| ||||||||||||||||||| |**SKM 145GB066D**|||||**Module**<br>lesm|||t= 10 ms; sin.|T; = 175°C||||880||||A| ||||||l~RMs)||||||||200||||A| ||||||~~a~~||||||||||||| ||||||Tog||||||||-40... +125||||°C| ||||||Visol|||AC, 1 min.|||||4000||||Vv| |**Features**|||||||||||||||||| |e Trench = Trenchgate technology|||||**Characteristics**||||Tease|=||25°C,|unless otherwise specified||||| |* VocE(sat) With positive <br>coefficient||temperature|||**Symbol**<br>**IGBT**||||**Conditions**|||||**min.**|**typ.**|**max.**||||**Units**| |°rarcapability, self<br>~~g~~<br>~~Cc~~|||||~~Veen~~<br>logs|||~~Vee = Vee: bo = 2.4 mA~~<br>Vee=OV.Vce=Vceg|~~=~~25°C|||~~5~~|~~58~~<br>0,08|~~65~~<br>0,25|~~Vv~~<br>| mA||| |**Typical Applications***|||||VoE0||||T, = 25°C||||0,9|1|||Vj| |e AC inverter Drives|||||||||T, = 150 °C||||0,85|0,9|||V| |e« UPS|||||Tor|||Voge = 15V|T, =25°C||||3,7|6|||mQ| |e Electronicwelders|||||||||T, = 150°C||||5,7|8|||mQ| |**Remarks**<br>-Casetemperature|_<br>limited|limitedtoT,|T,=||VoE(saty<br>~~;~~|||lonom = 150A, Vee = 15V|T= 25°C opintey,<br>T,~~= 150°C,~~<br>j<br>chiplev.||||1,45<br>~~1,7~~<br>~~555~~|1,9<br>~~2,1~~|||7<br>~~Vv~~<br>~~—~~| **GB** © by SEMIKRON 06-10-2009 NOS 1 **SKM 145GB066D** **==> picture [362 x 36] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||| |---|---|---|---|---|---| |Characteristics| |Symbol|Conditions|min.|typ.|max.|Units| |Inverse Diode| **----- End of picture text -----**<br> ## **SEMITRANS[®] 2** **Module** ## Trench IGBT Modules **SKM 145GB066D** ## **Features** This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. ## **Typical Applications*** * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. ## **Remarks** **==> picture [16 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> GB<br>**----- End of picture text -----**<br> © by SEMIKRON 06-10-2009 NOS 2 ## **SKM 145GB066D** |Ai<br>——|i||**Zth**<br>**Symbol**|**Conditions**|**Values**|**Units**| |---|---|---|---|---|---|---| |—>?|||**Zth(j-c)l**<br>R,|i=|220|mk/W| |P<br>,<br>dit<br>he|||R;<br>R;<br>R;<br>tau,<br>tau,<br>tau,|i=2<br>i=3<br>i=4<br>i=<br>i=2<br>i=3|60<br>16,5<br>3,5<br>0,0447<br>0,0223<br>0,0015|mk/W<br>mk/W<br>mk/W<br>s<br>s<br>s| |**SEMITRANS® 2**|||**Zth(j-c)D**<br>tau,<br>R;|i=4<br>i=|0,0002<br>330|s<br>mk/W| |Trench IGBT Modules|||R,<br>R;|i=2<br>i=3|137<br>28|mk/W<br>mk/W| ||||R;|i=4|5|mk/W| |**SKM 145GB066D**|||tau,<br>tau,<br>tau,|i=<br>i=2<br>i=3|0,05<br>0,0129<br>0,002|s<br>s<br>s| ## **Features** ## **Typical Applications*** ## **Remarks** **==> picture [16 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> GB<br>**----- End of picture text -----**<br> ~~LT~~ 3 06-10-2009 NOS © by SEMIKRON **SKM 145GB066D** Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 5 Typ. transfer characteristic Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic ~~ST~~ 4 06-10-2009 NOS © by SEMIKRON ## **SKM 145GB066D** Fig. 7 Typ. switching times vs. IC Fig. 9 Transient thermal impedance of IGBT and Diode Fig. 11Typ. CAL diode peak reverse recovery current Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic Fig. 12 Typ. CAL recovered charge © by SEMIKRON 06-10-2009 NOS 5 **SKM 145GB066D** UL recognized, file no. E 63 532 ~~LT~~ 6 06-10-2009 NOS © by SEMIKRON
Updated at March 31, 2026
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