SKM111AR

## **SKM 111AR** MOSFET,TRANSISTOR 

> **Absolute Maximum Ratings** T, = 25 °C, unless otherwise specified —- **Symbol** | **Conditions** | **Values** | **Units** a Vos 100 Vv f SN at Ip T, = 25 (80) °C 200 (150) A 

> "@ke4 2sed“ - VesTy» (Tstg) 1ms - 40 ... +260+ 150 **0** (125) °CVvA ot Visol AC, 1 min. 2500 v **Inverse diode** In =-ly 200 A **SEMITRANS[TM] M1** lem =~ Ign 600 A Power MOSFET Modules **Characteristics** T, = 25 °C, unless otherwise specified Vier)pss **Symbol** - **Conditions** =0V, Ip = 0,25 mA | **min.** 100 **typ. max.** | **Units** Vv **SKM 111AR** Vesith) Ves = Vos: Ip = 1 mA 21 3 4 Vv loss Veg = 0 V, Vpg = 100 V, 50(300) 250(1000) | pA T, = 25 (125) °C loss Veg = 20 V, Vpg = OV 10 100 nA Rosyon) Veg = 10 V, Ip = 130A 7 8,5 ma **Features** Os Vos = 25 V, Ip = 130A 60 75 Ss e« NChannel, enhancement mode =| Ccxc Ves = 9, Vos = 25 V, f= 1 MHz 160 pF e Avalanche characteristic Ciss 10 13 nF e Short connections and built-in coe 3 i rr gate resistors to suppress internal L , 50 aH oscillations even in critical ~~DS~~ applications ton) Vpp = 50 V, Ip = 130A, 60 ns e Isolated copper baseplate r Ves == 10V, Rg = 3,3 0 oo ° All electrical connections on top “o 500 - for easy busbaring ~~f~~ e Large clearances (10 mm) and **Inverse diode** creepage distances (20 mm) Vsp Ip = 400 A; Veg = OV 1,25 1,6 Vv + UL recognized, file no. E 63532 |‘ T= 28 (050) °C 400 ns Q, T, = 25°C 3,5 uC **Typical Applications*** lie T, = 150 °C A e Switched mode power supplies **Thermal characteristics** e DC servo and robot drives Reng-c) per MOSFET 0,18 K/IW e DC choppers Rinic-s) M,, surface 10 ym, per module 0,05 K/W e UPS equipment **Mechanical data** e Not suitable for linear M, to heatsink (M6) 4 5 Nm amplification M, for terminals (M5) 2,5 3,5 Nm w 130 g **MA** 

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## **SKM 111AR** MOSFET,TRANSISTOR 

Fig. 1 Rated power dissipation vs. temperature 

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Fig. 2 Maximum safe operating area<br>**----- End of picture text -----**<br>


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Fig. 3 Output characteristic<br>**----- End of picture text -----**<br>


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Fig. 4 Transfer characteristic<br>**----- End of picture text -----**<br>


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Fig. 5 On-resistance vs. temperature<br>**----- End of picture text -----**<br>


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Fig. 6 Rated current vs. temperature<br>**----- End of picture text -----**<br>


© by SEMIKRON 

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## **SKM 111AR** MOSFET,TRANSISTOR 

Fig. 7 Brakdown voltage vs. temperature 

Fig. 8 Drain-source voltage derating 

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nC<br>**----- End of picture text -----**<br>


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Fig. 9 Capacitances vs. drain-source voltage<br>**----- End of picture text -----**<br>


Fig. 11 Diode forward characteristic 

Fig. 10 Gate charge characteristic 

Fig. 14 Gate-source threshold voltage 

© by SEMIKRON 

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## **SKM 111AR** MOSFET,TRANSISTOR 

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UL Recognized Dimensions in mm<br>File no. E 63 532<br>**----- End of picture text -----**<br>


This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX. 

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~~Lo~~ 4 21-12-2015 DIL © by SEMIKRON