SKM100GB12T4

**SKM100GB12T4** 

|**SKM100GB12T4**||
|---|---|
|hg<¢<br>’|**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**IGBT**<br>VCES<br>Tj= 25 °C<br>1200<br>V<br> ~~Pb~~|
||IC<br>Tj= 175 °C<br>Tc= 25 °C<br>160<br>A<br>Tc= 80 °C<br>123<br>A|
||ICnom<br>100<br>A|
|**SEMITRANS® 2**<br>Fast IGBT4 Modules<br>**SKM100GB12T4**<br>**Features**<br>• IGBT4 = 4. generation fast trench IGBT<br>(Infineon)<br>• CAL4 = Soft switching 4. generation|ICRM<br>ICRM= 3xICnom<br>300<br>A<br>VGES<br>-20 ... 20<br>V<br>tpsc<br>VCC= 800 V<br>VGE≤ 15 V<br>VCES≤ 1200 V<br>Tj= 150 °C<br>10<br>µs<br>Tj<br>-40 ... 175<br>°C<br>**Inverse diode**<br>IF<br>Tj= 175 °C<br>Tc= 25 °C<br>121<br>A<br>Tc= 80 °C<br>91<br>A<br>IFnom<br>100<br>A<br>IFRM<br>IFRM= 3xIFnom<br>300<br>A<br>IFSM<br>tp= 10 ms, sin 180°, Tj= 25 °C<br>550<br>A<br>Tj<br>-40 ... 175<br>°C<br>**Module**<br>~~es ee ee~~<br>~~PYeee~~<br>~~eT~~<br>~~ee~~<br>~~ee~~<br>~~i~~<br>~~a~~<br>~~fn~~|
|CAL-diode|It(RMS)<br>Tterminal= 80 °C<br>200<br>A|
|• Isolated copper baseplate using DBC<br>technology (Direct Bonded Copper)<br>• Increased power cycling capability|Tstg<br>-40 ... 125<br>°C<br>Visol<br>AC sinus 50 Hz, t = 1 min<br>4000<br>V<br>~~a~~|
|• With integrated gate resistor||
|• For higher switching frequenzies up to|**Characteristics**|
|20kHz<br>• UL recognized, file no. E63532|**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**|
||**IGBT**|
|**Typical Applications***<br>• AC inverter drives<br>• UPS<br>• Electronic welders at fsw up to 20 kHz<br>**Remarks**<br>• Case temperature limited<br>to Tc= 125°C max.<br>• Recommended Top= -40 ... +150°C<br>• Product reliability results valid<br>for Tj= 150°C|VCE(sat)<br>IC= 100 A<br>VGE= 15 V<br>chiplevel<br>Tj= 25 °C<br>1.80<br>2.05<br>V<br>Tj= 150 °C<br>2.20<br>2.40<br>V<br>VCE0<br>chiplevel<br>Tj= 25 °C<br>0.8<br>0.9<br>V<br>Tj= 150 °C<br>0.7<br>0.8<br>V<br>rCE<br>VGE= 15 V<br>chiplevel<br>Tj= 25 °C<br>10.00<br>11.50<br>m<br>Tj= 150 °C<br>15.00<br>16.00<br>m<br>VGE(th)<br>VGE=VCE, IC= 3.8 mA<br>5<br>5.8<br>6.5<br>V<br>ICES<br>VGE= 0 V<br>VCE= 1200 V<br>Tj= 25 °C<br>1<br>mA<br>Tj= 150 °C<br>mA<br>Cies<br>VCE= 25 V<br>VGE= 0 V<br>f = 1 MHz<br>6.15<br>nF<br>Coes<br>f = 1 MHz<br>0.40<br>nF<br>Cres<br>f = 1 MHz<br>0.345<br>nF<br>QG<br>VGE= - 8 V...+ 15 V<br>565<br>nC<br>~~ee~~<br>~~_— Pf~~<br>~~————————~~<br>~~a OO~~<br>~~Se~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~a OO~~|
|**GB**<br>~~gle.~~<br>iS.<br>¥|RGint<br>Tj= 25 °C<br>7.5<br><br>td(on)<br>VCC= 600 V<br>IC= 100 A<br>VGE= ±15 V<br>RG on= 1<br>RG off= 1<br>di/dton= 1800 A/µs<br>di/dtoff= 1130 A/µs<br>Tj= 150 °C<br>165<br>ns<br>tr<br>Tj= 150 °C<br>47<br>ns<br>Eon<br>Tj= 150 °C<br>15<br>mJ<br>td(off)<br>Tj= 150 °C<br>400<br>ns<br>tf<br>Tj= 150 °C<br>75<br>ns<br>Eoff<br>Tj= 150 °C<br>10.2<br>mJ<br>Rth(j-c)<br>per IGBT<br>0.27<br>K/W<br>~~er~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~|~~<br>~~ee ee~~<br>~~|~~<br>~~es~~<br>~~ee~~<br>po<br>~~ee~~<br>~~ee~~<br>~|



~~Ps~~ **© by SEMIKRON Rev. 1 – 03.09.2013 1** 

**SKM100GB12T4** ~~eee~~ 

|**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**Inverse diode**<br>~~EEE~~|**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**Inverse diode**<br>~~EEE~~|**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**Inverse diode**<br>~~EEE~~|**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**Inverse diode**<br>~~EEE~~|**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**Inverse diode**<br>~~EEE~~|
|---|---|---|---|---|
|VF= VEC<br> ~~EEE~~|IF= 100 A<br>VGE= 0 V<br>chiplevel<br>~~EEE~~|Tj= 25 °C<br>~~EEE~~|2.20<br>2.52<br>~~EEE~~|V<br>~~EEE~~|
|||Tj= 150 °C|2.15<br>2.47|V|
|VF0|chiplevel|Tj= 25 °C|1.3<br>1.5|V|
|~~ee~~||Tj= 150 °C|0.9<br>1.1|V|
|rF<br>~~ee—~~|chiplevel|Tj= 25 °C<br>~~re~~|9.0<br>10.2<br>~~ee~~|m|
|~~ee—~~<br>~~—~~||Tj= 150 °C<br>~~re~~<br>~~re~~|12.5<br>13.7<br>~~ee~~<br>~~ee~~|m|
|IRRM<br>~~ee—~~<br>~~—~~<br>~~ne~~|IF= 100 A<br>di/dtoff= 1600 A/µs<br>VGE= ±15 V<br>VCC = 600 V<br>~~ne~~|Tj= 150 °C<br>~~re~~<br>~~re~~<br>~~ne~~|54<br>~~ee~~<br>~~ee~~<br>~~ne~~|A<br>~~ne~~|
|Qrr<br>~~—~~<br>~~ne~~<br>~~—~~||Tj= 150 °C<br>~~re~~<br>~~ne~~<br>~~ee~~|15.7<br>~~ee~~<br>~~ne~~<br>~~ee~~|µC<br>~~ne~~<br>~~ee~~|
|Err<br>~~ne~~<br>~~—~~||Tj= 150 °C<br>~~ne~~<br>~~ee~~|5.9<br>~~ne~~<br>~~ee~~|mJ<br>~~ne~~<br>~~ee~~|
|Rth(j-c)<br>~~ne~~<br>~~—~~<br>~~a~~|per diode<br>~~ne~~<br>~~ee~~<br>||0.48<br>~~ne~~<br>~~ee ~~<br>|K/W<br>~~ne~~<br> ~~ee~~<br>|
|**Module**<br>~~ee~~|||||
|LCE<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~||30<br>~~ee~~<br>~~re~~|nH<br>~~ee~~<br>~~re~~|
|RCC'+EE'<br>~~ee~~<br>~~a~~<br>~~ee~~|terminal-chip<br>~~ee~~<br>~~ee~~|TC= 25 °C<br>~~ee~~<br>~~es~~<br>~~ee~~|0.65<br>~~ee~~<br>~~es~~<br>~~re~~|m<br>~~ee~~<br>~~re~~|
|~~a~~<br>~~ee~~||TC= 125 °C<br>~~es~~<br>~~ee~~|1<br>~~es~~<br>~~re~~|m<br>~~re~~|
|Rth(c-s)<br>~~ee~~<br>~~Ppp~~|per module<br>~~ee~~<br>~~Ppp~~||0.04<br>0.05<br>~~re~~<br>~~Ppp~~|K/W<br>~~re~~<br>~~Ppp~~|
|Ms<br>~~Ppp~~|to heat sink M6<br>~~Ppp~~||3<br>5<br>~~Ppp~~|Nm<br>~~Ppp~~|
|Mt<br>~~Ppp~~|~~Ppp~~|to terminals M5<br>~~Ppp~~|2.5<br>5<br>~~Ppp~~|Nm<br>~~Ppp~~|
|~~Ppp~~||~~Ppp~~|~~Ppp~~|Nm<br>~~Ppp~~|
|w<br>~~Ppp~~<br>~~a~~|~~Ppp~~||160<br>~~Ppp~~|g<br>~~Ppp~~|



Fast IGBT4 Modules 

## **SKM100GB12T4** 

## **Features** 

- IGBT4 = 4. generation fast trench IGBT (Infineon) 

- CAL4 = Soft switching 4. generation CAL-diode 

- Isolated copper baseplate using DBC technology (Direct Bonded Copper) 

- Increased power cycling capability 

- With integrated gate resistor 

- For higher switching frequenzies up to 20kHz 

- UL recognized, file no. E63532 

## **Typical Applications*** 

- AC inverter drives 

- UPS 

- Electronic welders at fsw up to 20 kHz 

## **Remarks** 

- Case temperature limited to Tc = 125°C max. 

- Recommended Top = -40 ... +150°C 

- Product reliability results valid for Tj = 150°C 

**GB** ~~a~~ **2 Rev. 1 – 03.09.2013 © by SEMIKRON** 

**SKM100GB12T4** 

Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' 

Fig. 3: Typ. turn-on /-off energy = f (IC) 

Fig. 5: Typ. transfer characteristic 

Fig. 2: Rated current vs. temperature IC = f (TC) 

Fig. 4: Typ. turn-on /-off energy = f (RG) 

Fig. 6: Typ. gate charge characteristic 

**© by SEMIKRON** 

**Rev. 1 – 03.09.2013** 

**3** 

**SKM100GB12T4** 

Fig. 7: Typ. switching times vs. IC 

Fig. 9: Transient thermal impedance 

Fig. 11: CAL diode peak reverse recovery current 

Fig. 8: Typ. switching times vs. gate resistor RG 

Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' 

Fig. 12: Typ. CAL diode peak reverse recovery charge 

**© by SEMIKRON** 

**Rev. 1 – 03.09.2013** 

**4** 

**SKM100GB12T4** 

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This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX 

* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. 

~~a~~ **© by SEMIKRON Rev. 1 – 03.09.2013 5**