SKM100GB125DN

IGBT Module, Half Bridge, 100 A, 3.3 V, 150 °C, Module

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Manufacturer: SEMIKRON
Product type:
Transistor Polarity:Dual N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):3.3V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Tra
No. of Pins: 7Pins
Product Range: -
IGBT Technology: NPT IGBT [Ultrafast]
IGBT Termination: Stud
Power Dissipation: -
IGBT Configuration: Half Bridge
Transistor Mounting: Panel
Transistor Polarity: Dual N Channel
DC Collector Current: 100A
Power Dissipation Pd: -
Transistor Case Style: Module
Operating Temperature Max: 150°C
Junction Temperature Tj Max: 150°C
Continuous Collector Current: 100A
Collector Emitter Voltage Max: 1.2kV
Collector Emitter Voltage V(br)ceo: 1.2kV
Collector Emitter Saturation Voltage: 3.3V
Collector Emitter Saturation Voltage Vce(on): 3.3V

Delivery and price
Units per pack	10
Price	150.41 €
Current stock	10+
Lead time	30 days

Datasheet

## **SKM 100GB125DN** 

|a<br>e<br>—<br>—<br>2<br>S.<br>ce|=<br>f|.<br>r-|||**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**<br>**IGBT**<br>|<br>Voces<br>T,=25°C|**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**<br>**IGBT**<br>|<br>Voces<br>T,=25°C|**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**<br>**IGBT**<br>|<br>Voces<br>T,=25°C|**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**<br>**IGBT**<br>|<br>Voces<br>T,=25°C|**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**<br>**IGBT**<br>|<br>Voces<br>T,=25°C||T, = <br>||T, = <br>||25 °C,|**Values**<br> unless otherwise<br>1200|otherwise specified|specified<br>||specified<br>||**Units**<br>specified<br>V|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**SEMITRANS® 2N**<br>aRE<br>gore<br>a =<br>oa|||le<br>loRM<br>~~Mes~~<br>tosc||~~[|~~|~~[|CdS~~|T,=150 °C<br>lopm=2Xlonom<br>~~[|CdS~~<br>Voc = 600 V; Veg<20V;|~~CdS~~<br><20V;|Tease =25°C<br>Tease=85 °C<br>~~CdS~~<br>T,= 125°C||~~CdS~~|~~CdS~~|100<br>80<br>150<br>~~CdS~~<br>10|~~CdS~~|~~CdS~~|~~CdS~~|A<br>A<br>A<br>~~CdS~~<br>us|
||||||||Vces < 1200 V|||||||||||
|Ultra Fast IGBT Module||||**Inverse Diode**<br>le<br>T, = 150 °C|||||Tease<br>= 25 °C||||95||||A|
||||||||||Tease = 80 °C||||65||||A|
|||||||||||||||||||
|**SKM 100GB125DN**||||lesm|||t, = 10 ms; sin.||T, = 150 °C||||720||||A|
|||||**Module**||||||||||||||
|||||las)|||||||||200||||A|
|||||~~M8~~<br>#10||||||||||||||
|||||Tog|||||||||125||||°C|
|**Features**||||Visol|||AC, 1 min.||||||4000||||Vv|
|e N channel, homogeneous|Si|||||||||||||||||
|e Low inductance case||||**Characteristics**||||||T, =||25 °C,|unless otherwise specified|||||
|e Short tail currentwith low<br>temperature dependence||||**Symbol**<br>**IGBT**||||**Conditions**||||||**min.**|**typ.**|**max.**||||**Units**|
|e High short circuit capability, self|||||||_<br>_|||||||||||
|e Fast& soft inverse CALdiodes<br>e lsolated copper baseplate using||||CES|||GE<br>©)<br>SCE|"CES|t- 495°C<br>~~iT~~||||,|,|||A<br>~~m~~|
|DCB Direct Copper Bonding||||Veo|||||T=25°C||||||||Vv|
|Technology|||||||||Tj = 125 °C||||||||Vv|
|e Large clearance (10 mm)|and|||roe|||Vog = 15V||T, = 25°C||||||||mQ|
|creepage distances (20 mm)|||||||||T, = 125°C||||||||mQ|
|**Typical Applications***||||~~VcE(sat)~~|||~~Icnom = 75 A, Vee =15V~~|~~=15V~~|~~T= °Cchiptev.~~||||~~3,3~~|~~3,85~~|||~~Vv~~|
|'<br>'<br>e Switched mode powersupplies at <br>f.<br>> 20 kHz<br>SW<br>.<br>e Resonant inverters up to 100 kHz|||C,<br> |<br>~'es<br>Coes<br>C<br>~~res~~||||Voge = 25,Veg=0V||f=1MHz||||5<br>0,72<br>0,38|6,6<br>,<br>0,9<br>0,5|||nF<br>nF<br>nF|
|e Inductive heating||||Qe|||Veg = 0-+20V||||||650||||nc|
|||||||||||||||||||
|||||tan)|||||||||80||||ns|
|||||t,|||Reon = 82||Voc =|600V|||40||||ns|
|||||Eon<br>taomn|||Roof = 8 2||lo= 75A<br>T,= 125 °C||||9<br>360||||mJ<br>ns|
|||||t|||||Voge =|+ 15V|||20||||ns|
|||||Eo|||||||||3,5||||mJ|
|||||Ring-c)|||perIGBT|||||||0,18|||K/W|
|**GB**||||||||||||||||||



© by SEMIKRON 

02-08-2012 DIL 

1 

## **SKM 100GB125DN** 

**==> picture [528 x 182] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|-|Characteristics|
|Symbol|Conditions|min.|typ.|max.|Units|
|e|a,’—|ff|Inverse Diode|||||||
|*|=|ee|a|Ve=Vec|—||lenom = 75 Ai Voge=OV|1) = 25 °Cohiptev.|2|2,5|V|
|=OI|T;|= 125|°C|chiplev.|1,8|Vv|
|_|T,|=|125|°C|Vv|
|T,|=|125|°C|ma|
|SEMITRANS|[®]|2N|laRM|l-=75A|T,|=|125|°C|50|A|
|Q,|di/dt|=|800|A/us|11,5|te|
|Ultra Fast IGBT Module|
|Module|

**----- End of picture text -----**<br>


Ultra Fast IGBT Module 

**SKM 100GB125DN** 

## **Features** 

This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. 

## **Typical Applications*** 

**GB** ~~ss~~ 

~~LT~~ 2 02-08-2012 DIL © by SEMIKRON 

**SKM 100GB125DN** 

|=<<br>ay<br>|<br>Z<br>=<br>—_<br>a<br>=<br>2<br>?<br>,Bee<br>ger<br>an|**Zth**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Units**<br>**Zth(j-c)l**<br>**Zth(j-c)D**<br>|<br>|<br>R<br>i=1<br>95<br>mk/W<br>R;<br>i=2<br>65<br>mk/W<br>R<br>i=3<br>17,5<br>mk/W<br>R,<br>i=4<br>2,5<br>mk/W<br>tau,<br>i=<br>0,0327<br>s<br>tau,<br>i=2<br>0,008<br>s<br>tau,<br>i=3<br>0,0017<br>s<br>tau,<br>i=4<br>0,008<br>s<br>R;<br>i=1<br>300<br>mk/W<br>R,<br>i=2<br>160<br>mk/W<br>R;<br>i=3<br>36<br>mk/W<br>R;<br>i=4<br>4<br>mk/W<br>tau,<br>i=<br>0,054<br>s<br>tau,<br>i=2<br>0,001<br>s<br>tau,<br>i=3<br>0,0015<br>s<br>tau;<br>i=4<br>0,1<br>s|**Zth**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Units**<br>**Zth(j-c)l**<br>|<br>|<br>R<br>i=1<br>95<br>mk/W<br>R;<br>i=2<br>65<br>mk/W<br>R<br>i=3<br>17,5<br>mk/W<br>R,<br>i=4<br>2,5<br>mk/W<br>tau,<br>i=<br>0,0327<br>s<br>tau,<br>i=2<br>0,008<br>s<br>tau,<br>i=3<br>0,0017<br>s<br>tau,<br>i=4<br>0,008<br>s|
|---|---|---|
|**SEMITRANS® 2N**|||
|||**Zth(j-c)D**<br>R;<br>i=1<br>300<br>mk/W<br>R,<br>i=2<br>160<br>mk/W<br>R;<br>i=3<br>36<br>mk/W<br>R;<br>i=4<br>4<br>mk/W<br>tau,<br>i=<br>0,054<br>s<br>tau,<br>i=2<br>0,001<br>s<br>tau,<br>i=3<br>0,0015<br>s<br>tau;<br>i=4<br>0,1<br>s|
||||
|Ultra Fast IGBT Module|||
|**SKM 100GB125DN**|||
||||
|**Features**<br>e N channel, homogeneous Si<br>e Low inductance case<br>e<br>Short tail current with low<br>temperature dependence<br>e High short circuit capability, self<br>limiting to 6 X lonom<br>e<br>Fast & soft inverse CAL diodes<br>e<br>Isolated copper baseplate using<br>DCB Direct Copper Bonding<br>Technology<br>e Large clearance (10 mm) and<br>creepage distances (20 mm)|||
|**Typical Applications***<br>e Switched mode power supplies at<br>fgw > 20 kHz<br>e Resonant inverters up to 100 kHz<br>e<br>Inductive heating<br>« Electronicwelders at f,,, > 20 kHz|||
||||



~~LT~~ 3 02-08-2012 DIL © by SEMIKRON 

**SKM 100GB125DN** 

Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' 

Fig. 3 Typ. turn-on /-off energy = f (IC) 

Fig. 5 Typ. transfer characteristic 

Fig. 2 Rated current vs. temperature IC = f (TC) 

Fig. 4 Typ. turn-on /-off energy = f (RG) 

Fig. 6 Typ. gate charge characteristic 

© by SEMIKRON 

02-08-2012 DIL 

4 

## **SKM 100GB125DN** 

Fig. 7 Typ. switching times vs. IC 

Fig. 9 Transient thermal impedance 

Fig. 11 Typ. CAL diode peak reverse recovery current 

Fig. 8 Typ. switching times vs. gate resistor RG 

Fig. 10 CAL diode forward characteristic 

**==> picture [191 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig. 12 Typ. CAL diode peak reverse recovery charge<br>**----- End of picture text -----**<br>


© by SEMIKRON 

02-08-2012 DIL 

5 

**SKM 100GB125DN** 

File 63 532 

UL Recognized 

© by SEMIKRON 

02-08-2012 DIL 

6

Updated at March 31, 2026

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