SKM100GAL12T4

IGBT Module, Single, 160 A, 1.8 V, 175 °C, Module

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.

Manufacturer: SEMIKRON
Product type:
Transistor Polarity:N Channel; DC Collector Current:160A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Ca
No. of Pins: 7Pins
Product Range: -
IGBT Technology: IGBT 4 Fast [Trench]
IGBT Termination: Stud
Power Dissipation: -
IGBT Configuration: Single
Transistor Mounting: Panel
Transistor Polarity: N Channel
DC Collector Current: 160A
Power Dissipation Pd: -
Transistor Case Style: Module
Operating Temperature Max: 175°C
Junction Temperature Tj Max: 175°C
Continuous Collector Current: 160A
Collector Emitter Voltage Max: 1.2kV
Collector Emitter Voltage V(br)ceo: 1.2kV
Collector Emitter Saturation Voltage: 1.8V
Collector Emitter Saturation Voltage Vce(on): 1.8V

Delivery and price
Units per pack	50
Price	60.11 €
Current stock	10+
Lead time	30 days

Datasheet

**SKM100GAL12T4** 

**SEMITRANS[®] 2** 

## Fast IGBT4 Modules 

## **SKM100GAL12T4** 

## **Features** 

- IGBT4 = 4. generation fast trench IGBT (Infineon) 

- CAL4 = Soft switching 4. generation CAL-diode 

- Isolated copper baseplate using DBC technology (Direct Bonded Copper) 

- Increased power cycling capability 

- With integrated gate resistor 

- For higher switching frequenzies up to 20kHz 

- UL recognized, file no. E63532 

## **Typical Applications*** 

- Electronic welders at fsw up to 20 kHz 

- DC/DC – converter 

- Brake chopper 

|**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**IGBT**|**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**IGBT**|**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**IGBT**|**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**IGBT**|**Absolute Maximum Ratings**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**IGBT**|
|---|---|---|---|---|
|VCES|Tj= 25 °C||1200|V|
|IC|Tj= 175 °C|Tc= 25 °C|160|A|
|||Tc= 80 °C|123|A|
|ICnom|~~pppo~~||100<br>~~po~~|A<br>~~po~~|
|ICRM|ICRM= 3xICnom<br>~~pppo~~||300<br>~~po~~|A<br>~~po~~|
|VGES|~~pppo~~||-20 ... 20<br>~~po~~|V<br>~~po~~|
|tpsc|VCC= 800 V<br>VGE≤ 15 V<br>VCES≤ 1200 V<br>~~pp~~|Tj= 150 °C<br>~~pppo~~|10<br>~~po~~|µs<br>~~po~~|
|Tj<br>~~Oo~~|~~pppo~~<br>~~Oo~~||-40 ... 175<br>~~po~~<br>~~Oo~~|°C<br>~~po~~<br>~~Oo~~|
|**Inverse diode**<br>~~Oo~~<br>~~ee~~<br>~~es~~|||||
|IF<br>~~Oo~~|Tj= 175 °C<br>~~Oo~~<br>~~ee~~<br>~~———~~|Tc= 25 °C<br>~~Oo~~<br>~~ee~~|121<br>~~Oo~~<br>~~es~~|A<br>~~Oo~~|
|~~—~~||Tc= 80 °C<br>~~ee~~<br>~~ee~~<br>~~—~~|91<br>~~es~~<br>~~ee~~|A<br>~~ee~~|
|IFnom<br>~~_~~<br>~~—~~|~~ee~~<br>~~———~~||100<br>~~ee~~|A<br>~~ee~~|
|IFRM<br>~~_~~<br>~~—~~|IFRM= 3xIFnom<br>~~ee~~<br>~~———~~||300<br>~~ee~~|A<br>~~ee~~|
|IFSM<br>~~_~~<br>~~—~~|tp= 10 ms, sin 180°, Tj= 25 °C<br>~~ee~~<br>~~———~~||550<br>~~ee~~|A<br>~~ee~~|
|Tj<br>~~_~~<br>~~—~~|~~ee~~<br>~~a~~<br>~~———~~||-40 ... 175<br>~~ee~~<br>~~a~~|°C<br>~~ee~~<br>~~a~~|
|**Freewheeling diode**<br>~~———~~|||||
|IF<br>~~—~~|Tj= 175 °C<br>~~———~~|Tc= 25 °C<br>~~—~~|121|A|
|||Tc= 80 °C|91|A|
|IFnom<br>~~ee~~<br>~~eea~~|~~a~~||100|A|
|IFRM<br>~~ee~~<br>~~eea~~|IFRM= 3xIFnom<br>~~a~~||300|A|
|IFSM<br>~~ee~~<br>~~eea~~|tp= 10 ms, sin 180°, Tj= 25 °C<br>~~a~~||550|A|
|Tj<br>~~eea~~<br>~~Oe~~|~~a~~<br>~~Oe~~||-40 ... 175<br>~~Oe~~|°C<br>~~Oe~~|
|**Module**<br>~~Oe~~<br>~~ee~~|||||
|It(RMS)<br>~~Oe~~<br>~~eeee~~|Tterminal= 80 °C<br>~~Oe~~<br>~~ee~~||200<br>~~Oe~~|A<br>~~Oe~~|
|Tstg<br>~~eeee~~|~~ee~~||-40 ... 125|°C|
|Visol<br>~~eeee~~|AC sinus 50 Hz, t = 1 min<br>~~ee~~<br>~~a~~||4000<br>~~a~~|V<br>~~a~~|



- Switched reluctance motor 

## **Remarks** 

- Case temperature limited to Tc = 125°C max. 

- Recommended Top = -40 ... +150°C 

- Product reliability results valid for Tj = 150°C 

|**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**IGBT**|**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**IGBT**|**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**IGBT**|**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**IGBT**|**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>**IGBT**|
|---|---|---|---|---|
|VCE(sat)|IC= 100 A<br>VGE= 15 V<br>chiplevel|Tj= 25 °C|1.80<br>2.05|V|
|||Tj= 150 °C|2.20<br>2.40|V|
|VCE0|chiplevel|Tj= 25 °C|0.8<br>0.9|V|
|||Tj= 150 °C|0.7<br>0.8|V|
|rCE|VGE= 15 V<br>chiplevel|Tj= 25 °C|10.00<br>11.50|m|
|||Tj= 150 °C|15.00<br>16.00|m|
|VGE(th)|VGE=VCE, IC= 3.8 mA||5<br>5.8<br>6.5|V|
|ICES|VGE= 0 V<br>VCE= 1200 V|Tj= 25 °C|1|mA|
|||Tj= 150 °C||mA|
|Cies|VCE= 25 V<br>VGE= 0 V|f = 1 MHz|6.15|nF|
|Coes||f = 1 MHz|0.40|nF|
|Cres||f = 1 MHz|0.345|nF|
|QG|VGE= - 8 V...+ 15 V||565|nC|
|RGint|Tj= 25 °C||7.5||



**==> picture [22 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
GAL<br>**----- End of picture text -----**<br>


**© by SEMIKRON** 

**Rev. 1 – 03.09.2013** 

**1** 

**SKM100GAL12T4** 

## **Characteristics** 

**SEMITRANS[®] 2** 

## Fast IGBT4 Modules 

## **SKM100GAL12T4** 

## **Features** 

- IGBT4 = 4. generation fast trench IGBT (Infineon) 

- CAL4 = Soft switching 4. generation CAL-diode 

- Isolated copper baseplate using DBC technology (Direct Bonded Copper) 

- Increased power cycling capability 

- With integrated gate resistor 

- For higher switching frequenzies up to 20kHz 

- UL recognized, file no. E63532 

## **Typical Applications*** 

- Electronic welders at fsw up to 20 kHz 

- DC/DC – converter 

- Brake chopper 

- Switched reluctance motor 

## **Remarks** 

- Case temperature limited to Tc = 125°C max. 

- Recommended Top = -40 ... +150°C 

- Product reliability results valid for Tj = 150°C 

|td(on)<br>VCC= 600 V<br>IC= 100 A<br>VGE= ±15 V<br>RG on= 1<br>RG off= 1<br>di/dton= 1800 A/µs<br>di/dtoff= 1130 A/µs<br>Tj= 150 °C<br>165<br>ns<br>tr<br>Tj= 150 °C<br>47<br>ns<br>Eon<br>Tj= 150 °C<br>15<br>mJ<br>td(off)<br>Tj= 150 °C<br>400<br>ns<br>tf<br>Tj= 150 °C<br>75<br>ns<br>Eoff<br>Tj= 150 °C<br>10.2<br>mJ<br>**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>~~ee~~<br>~~pf oF~~|td(on)<br>VCC= 600 V<br>IC= 100 A<br>VGE= ±15 V<br>RG on= 1<br>RG off= 1<br>di/dton= 1800 A/µs<br>di/dtoff= 1130 A/µs<br>Tj= 150 °C<br>165<br>ns<br>tr<br>Tj= 150 °C<br>47<br>ns<br>Eon<br>Tj= 150 °C<br>15<br>mJ<br>td(off)<br>Tj= 150 °C<br>400<br>ns<br>tf<br>Tj= 150 °C<br>75<br>ns<br>Eoff<br>Tj= 150 °C<br>10.2<br>mJ<br>**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>~~ee~~<br>~~pf oF~~|td(on)<br>VCC= 600 V<br>IC= 100 A<br>VGE= ±15 V<br>RG on= 1<br>RG off= 1<br>di/dton= 1800 A/µs<br>di/dtoff= 1130 A/µs<br>Tj= 150 °C<br>165<br>ns<br>tr<br>Tj= 150 °C<br>47<br>ns<br>Eon<br>Tj= 150 °C<br>15<br>mJ<br>td(off)<br>Tj= 150 °C<br>400<br>ns<br>tf<br>Tj= 150 °C<br>75<br>ns<br>Eoff<br>Tj= 150 °C<br>10.2<br>mJ<br>**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>~~ee~~<br>~~pf oF~~|td(on)<br>VCC= 600 V<br>IC= 100 A<br>VGE= ±15 V<br>RG on= 1<br>RG off= 1<br>di/dton= 1800 A/µs<br>di/dtoff= 1130 A/µs<br>Tj= 150 °C<br>165<br>ns<br>tr<br>Tj= 150 °C<br>47<br>ns<br>Eon<br>Tj= 150 °C<br>15<br>mJ<br>td(off)<br>Tj= 150 °C<br>400<br>ns<br>tf<br>Tj= 150 °C<br>75<br>ns<br>Eoff<br>Tj= 150 °C<br>10.2<br>mJ<br>**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>~~ee~~<br>~~pf oF~~|td(on)<br>VCC= 600 V<br>IC= 100 A<br>VGE= ±15 V<br>RG on= 1<br>RG off= 1<br>di/dton= 1800 A/µs<br>di/dtoff= 1130 A/µs<br>Tj= 150 °C<br>165<br>ns<br>tr<br>Tj= 150 °C<br>47<br>ns<br>Eon<br>Tj= 150 °C<br>15<br>mJ<br>td(off)<br>Tj= 150 °C<br>400<br>ns<br>tf<br>Tj= 150 °C<br>75<br>ns<br>Eoff<br>Tj= 150 °C<br>10.2<br>mJ<br>**Characteristics**<br>**Symbol**<br>**Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Unit**<br>~~ee~~<br>~~pf oF~~|
|---|---|---|---|---|
|tr||Tj= 150 °C|47|ns|
|Eon||Tj= 150 °C|15|mJ|
|td(off)<br>~~ee~~<br>~~pf~~||Tj= 150 °C<br>~~ee~~<br>~~F~~|400|ns|
|tf<br>~~ee~~<br>~~pf~~||Tj= 150 °C<br>~~ee~~<br>~~F~~|75|ns|
|Eoff<br>~~ee~~<br>~~pf~~||Tj= 150 °C<br>~~ee~~<br>~~F~~|10.2|mJ|
|Rth(j-c)<br>~~ee~~<br>~~pf~~|per IGBT<br>~~ee~~<br>~~pf oF~~||0.27|K/W|
|**Inverse diode**<br>~~ee~~<br>~~pf oF~~|||||
|VF= VEC<br>~~pf~~|IF= 100 A<br>VGE= 0 V<br>chiplevel<br>~~pf oF~~|Tj= 25 °C<br>~~F~~|2.20<br>2.52|V|
|||Tj= 150 °C|2.15<br>2.47|V|
|VF0<br>~~e~~|chiplevel<br>~~ee~~|Tj= 25 °C<br>~~ee~~|1.3<br>1.5<br>|V<br>|
|~~e~~||Tj= 150 °C<br>~~ee~~|0.9<br>1.1<br>|V<br>|
|rF<br>~~e~~|chiplevel<br>~~ee~~|Tj= 25 °C<br>~~eea~~|9.0<br>10.2<br>~~a~~|m<br>~~a~~|
|~~e~~||Tj= 150 °C<br>~~eea~~|12.5<br>13.7<br>~~a~~<br>~~ee~~|m<br>~~a~~<br>~~ee~~|
|IRRM<br>~~e~~<br>~~ppp~~<br>~~——~~|IF= 100 A<br>di/dtoff= 1600 A/µs<br>VGE= ±15 V<br>VCC = 600 V<br>~~ee ~~<br>~~ppp~~<br>~~——~~|Tj= 150 °C<br>~~eea~~<br>~~ppp~~<br>~~——~~|54<br>~~a~~<br>~~ee~~<br>~~ppp~~|A<br>~~a~~<br>~~ee~~<br>~~ppp~~|
|Qrr<br>~~e~~<br>~~ppp~~<br>~~——~~||Tj= 150 °C<br> ~~ee~~<br>~~ppp~~<br>~~——~~|15.7<br><br>~~ppp~~|µC<br><br>~~ppp~~|
|Err<br>~~ppp~~<br>~~——~~||Tj= 150 °C<br>~~ppp~~<br>~~——~~|5.9<br>~~ppp~~|mJ<br>~~ppp~~|
|Rth(j-c)<br>~~ppp~~<br>~~——~~|per diode<br>~~ppp~~<br>~~a~~<br>~~——~~||0.48<br>~~ppp~~<br>~~a~~|K/W<br>~~ppp~~<br>~~a~~|
|**Freewheeling diode**<br>~~——~~|||||
|VF= VEC<br>~~——~~<br>~~a~~|IF= 100 A<br>VGE= 0 V<br>chiplevel<br>~~——~~<br>~~a~~<br>~~Pf~~|Tj= 25 °C<br>~~——~~<br>~~a~~|2.20<br>2.52<br>~~pf~~|V<br>~~pf~~|
|~~a~~<br>~~—~~||Tj= 150 °C<br>~~a~~<br>~~Pf~~|2.15<br>2.47<br>~~pf~~|V<br>~~pf~~|
|VF0<br>~~a~~<br>~~—~~|chiplevel<br>~~a~~<br>~~Pf~~|Tj= 25 °C<br>~~a~~<br>~~Pf~~<br>~~——~~|1.3<br>1.5<br>~~pf~~<br>~~a~~|V<br>~~pf~~<br>~~a~~|
|~~a~~<br>~~—~~||Tj= 150 °C<br>~~a~~<br>~~Pf~~<br>~~——~~|0.9<br>1.1<br>~~pf~~<br>~~a~~|V<br>~~pf~~<br>~~a~~|
|rF<br>~~a~~<br>~~—~~|chiplevel<br>~~a~~<br>~~Pf~~|Tj= 25 °C<br>~~a~~<br>~~Pf~~<br>~~——~~|9.0<br>10.2<br>~~pf~~<br>~~a~~|m<br>~~pf~~<br>~~a~~|
|~~a~~<br>~~—~~||Tj= 150 °C<br>~~a~~<br>~~Pf~~<br>~~——~~|12.5<br>13.7<br>~~pf~~<br>~~a~~|m<br>~~pf~~<br>~~a~~|
|IRRM<br>~~a~~<br>~~—~~<br>~~-—~~|IF= 100 A<br>di/dtoff= 1600 A/µs<br>VGE= ±15 V<br>VCC = 600 V<br>~~a~~<br>~~Pf~~<br>|Tj= 150 °C<br>~~a~~<br>~~Pf~~<br>~~——~~<br>~~a~~<br>~~ee~~|54<br>~~pf~~<br>~~a~~<br>~~a~~<br>~~ee~~|A<br>~~pf~~<br>~~a~~<br>~~a~~|
|Qrr<br>~~—~~<br>~~-—~~||Tj= 150 °C<br>~~Pf~~<br>~~a~~<br>~~ee~~|15.7<br>~~a~~<br>~~ee~~|µC<br>~~a~~|
|Err<br>~~—~~<br>~~-—~~||Tj= 150 °C<br>~~Pf~~<br>~~a~~<br>~~ee~~|5.9<br>~~a~~<br>~~ee~~|mJ<br>~~a~~<br>~~|~~|
|Rth(j-c)<br>~~-—~~|per Diode<br>~~a~~<br>~~ee~~<br>~~a~~||0.48<br>~~a~~<br>~~ee~~<br>~~a~~|K/W<br>~~a~~<br>~~|~~<br>~~a~~|
|**Module**<br>~~-— a~~<br>~~Ce~~|||||
|LCE|||30|nH|
|RCC'+EE'|terminal-chip<br>~~ed~~|TC= 25 °C|0.65|m|
|~~ee~~||TC= 125 °C<br>~~ed~~|1<br>~~ee~~|m|
|Rth(c-s)<br>~~|~~<br>~~ee~~<br>~~ee~~|per module<br>~~ed~~<br>~~ee~~||0.04<br>0.05<br>~~ee~~<br>~~ee~~|K/W<br>~~ee~~|
|Ms<br>~~ee~~<br>~~ee~~<br>~~po~~|to heat sink M6<br>~~ed~~<br>~~ee~~<br>~~po~~||3<br>5<br>~~ee~~<br>~~ee~~|Nm<br>~~ee~~|
|Mt<br>~~ee~~<br>~~ee~~<br>~~po~~|~~ed~~<br>~~ee~~<br>~~po~~|to terminals M5<br>~~ed~~<br>~~ee~~|2.5<br>5<br>~~ee~~<br>~~ee~~|Nm<br>~~ee~~|
|~~ee~~<br>~~po~~||~~ee ~~|~~ee ~~|Nm<br> ~~ee~~|
|w<br>~~po~~|~~po~~||160|g|



**GAL** ~~fa LT~~ **2 Rev. 1 – 03.09.2013 © by SEMIKRON** 

**SKM100GAL12T4** 

Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' 

Fig. 3: Typ. turn-on /-off energy = f (IC) 

Fig. 5: Typ. transfer characteristic 

Fig. 2: Rated current vs. temperature IC = f (TC) 

Fig. 4: Typ. turn-on /-off energy = f (RG) 

Fig. 6: Typ. gate charge characteristic 

**© by SEMIKRON** 

**Rev. 1 – 03.09.2013** 

**3** 

**SKM100GAL12T4** 

Fig. 7: Typ. switching times vs. IC 

Fig. 9: Transient thermal impedance 

Fig. 11: CAL diode peak reverse recovery current 

Fig. 8: Typ. switching times vs. gate resistor RG 

Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' 

Fig. 12: Typ. CAL diode peak reverse recovery charge 

**© by SEMIKRON** 

**Rev. 1 – 03.09.2013** 

**4** 

**SKM100GAL12T4** 

**==> picture [62 x 126] intentionally omitted <==**

**----- Start of picture text -----**<br>
SEMITRANS 2<br>GAL<br>**----- End of picture text -----**<br>


This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX 

* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. 

~~ee~~ **© by SEMIKRON Rev. 1 – 03.09.2013 5**

Updated at March 31, 2026

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