SKKT 273/12 E

**SKKT 273/12 E** ~~LO~~ 

**Absolute Maximum Ratings Symbol Conditions Values Unit Chip** IT(AV) Tc = 85 °C 274 A sinus 180° Tc = 100 °C 204 A ITSM Tj = 25 °C 9000 A 10 ms Tj = 130 °C 8000 A i[2] t Tj = 25 °C 405000 A²s 10 ms ~~TI~~ Tj = 130 °C 320000 A²s **SEMIPACK[®] 3** VRSM 1300 V VRRM 1200 V VDRM 1200 V Thyristor Modules (di/dt)cr Tj = 130 °C 130 A/µs ~~ae~~ (dv/dt)cr Tj = 130 °C 1000 V/µs **SKKT 273/12 E** Tj -40 ... 130 °C **Module** Tstg -40 ... 125 °C **Features** Visol 1 min 3000 V a.c.; 50 Hz; r.m.s. • Industrial standard package ~~Pp)~~ 1 s 3600 V • Electrically insulated base plate • Heat transfer through aluminum oxide **Characteristics** ceramic insulated metal base plate • Chip soldered on direct copper bonded **Symbol Conditions min. typ. max. Unit** Al2O3 ceramic **Chip** •• Thyristor with center gate ~~i~~ VT Tj = 25 °C, IT = 750 A 1.6 V UL recognition applied for file no. E63532 VT(TO) Tj = 130 °C 0.9 V rT Tj = 130 °C 0.92 m **Typical Applications*** IDD;IRD Tj = 130 °C, VDD = VDRM; VRD = VRRM 100 mA • DC motor control (e. g. for machine tools) ~~a~~ tgd Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs 1 µs • Temperature control (e. g. for ovens, tgr VD = 0.67 * VDRM 2 µs chemical processes) tq Tj = 130 °C 150 µs • Professional light dimming (studios, IH Tj = 25 °C 150 500 mA theaters) IL Tj = 25 °C, RG = 33  300 2000 mA VGT Tj = 25 °C, d.c. 2 V IGT Tj = 25 °C, d.c. 150 mA VGD Tj = 130 °C, d.c. 0.25 V IGD Tj = 130 °C, d.c. 10 mA Rth(j-c) per chip 0.104 K/W cont. per module 0.052 K/W ~~aa~~ Rth(j-c) sin. 180° per chip 0.108 K/W per module 0.054 K/W ~~—~~ Rth(j-c) per chip 0.122 K/W rec. 120° ~~a~~ per module 0.061 K/W **Module** Rth(c-s) chip 0.08 0.08 K/W module 0.04 K/W Ms to heatsink M5 4.25 5.75 Nm Mt to heatsink M8 7.65 10.34 Nm a 5 * 9,81 m/s² w 410 g **SKKT** ~~mel ——— ae~~ 

**© by SEMIKRON** 

**Rev. 2 – 17.05.2013** 

**1** 

## **SKKT 273/12 E** 

Fig. 1L: Power dissipation per thyristor/diode vs. on-state current 

Fig. 2L: Power dissipation of one module vs. rms current 

Fig. 3L: Power dissipation of two modules vs. direct current 

Fig. 1R: Power dissipation per thyristor/diode vs. ambient temperature 

Fig. 2R: Power dissipation of one module vs. case temperature 

Fig. 3R: Power dissipation of two modules vs. case temperature 

**© by SEMIKRON** 

**Rev. 2 – 17.05.2013** 

**2** 

**SKKT 273/12 E** 

Fig. 4L: Power dissipation of three modules vs. direct and rms current 

Fig. 5: Recovered charge vs. current decrease 

Fig. 7: On-state characteristics 

Fig. 4R: Power dissipation of three modules vs. case temperature 

Fig. 6: Transient thermal impedance vs. time 

Fig. 8: Surge overload current vs. time 

**© by SEMIKRON** 

**Rev. 2 – 17.05.2013** 

**3** 

## **SKKT 273/12 E** 

Fig. 9: Gate trigger characteristics 

**==> picture [26 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
SKKT<br>**----- End of picture text -----**<br>


**==> picture [56 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
SEMIPACK 3<br>**----- End of picture text -----**<br>


This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX 

* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. 

**© by SEMIKRON** 

**Rev. 2 – 17.05.2013** 

**4**