SKIIP 13AC126V1,M21

## **SKiiP 13AC126V1** 

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|Absolute Maximum Ratings|
|e|ee|Quns.|Symbol|Conditions|°|Values|P|Units|
|\be|||||||
|IGBT - Inverter|
|LA=|gareadmm|Saos|
|vs|“ AAS|Voes|1200|Vv|
|weesNe|lelor|T,t,<1ms=|25 (70) °C|41|50(31)|A|
|Voes|+20|V|
|T,|-|40...|+|150|°C|
|Diode - Inverter|
|le|T,|=|25|(70)|°C|30|(22)|A|
|MiniSKiiP|[®]|1|leRm|tp|<1ms|50|A|
|T,|-|40...|+|150|°C|
|3-phase bridge inverter|liRMs|per|power|terminal|(20 A|/|spring)|40|A|
|Tog|Top|<|Tstg|-|40...|+125|°C|
|Visol|AC,|1|min.|2500|Vv|
|SKiiP 13AC126V1|
|Characteristics|T,|=|25|°C,|unless|otherwise|specified|
|Symbol|Conditions|min.|typ.|max.|Units|
|IGBT - Inverter|
|Vogsat|lonom|=|25 A,|T;|=|25|(125)|°C|1,7(2)|2,1|(2,4)|v|
|Veen)|Vor|= Veg|Ie|=1mA|5|5,8|6,5|Vv|
|Vee(to)|T,|=|25|(125)|°C|1(0,9)|1,2|(1,1)|V|
|Features|ry|T, = 25|(125)|°C|28|(44)|36|(52)|||mO|
|Cres|Vog|=|25|V,|Veg|=|0V,|f=|1|MHz|1,8|nF|
|+|Fast Trench|IGBTs|Coos|Voge|= 25 V, Veg|= 0 V,|f=|1|MHz|0,3|nF|
|e|Robust|and|soft freewheeling|Cros|Vog|= 25|V, Veg|=|0 V, f=|1|MHz|0,2|nF|
|diodes|in CAL technology|Rings)|per IGBT|0,9|KW|
|P|Highly reliable|spring|contacts|for|tan)|under|following|conditions|95|ns|
|electrical|connections|t|V..=600V.V..=+15V|35|ns|
|°|UL|recognised|file|no.|E63532|O°|225|A.T.=|125°|
|g|:|tom|lonom|=|25 A,|Tj|=|125|°C|455|ns|
|t,|Reon|=|Reor|=|30|2|85|ns|
|Typical Applications*|
|Eon|inductive|load|4,1|mJ|
|e|Inverter up|to|16|kVA|E oi|3,1|md|
|e|Typical|motor|power|7.5|kW|
|Diode - Inverter|
|Remarks|Ve=Vec|—||lenom|= 25 A,|T; = 25|(125)|°C|1,8|(1,8)|2,1|(2,2)|V|
|°|Voesat|>|VF=|=|chip|F|level|value|Vvry(TO)|T,T;j = = 25 25 (125)(125) °C°C|32(40)1(0,8)|1,1 40(62)(0,9)|||maVv|
|Rings)|per diode|1,7|K/W|
|IRRM|under|following|conditions|25|A|
|Q,|lenom|=|2D|A,|Vp|=|600|V|5,3|ie|
|E,|Voge|=|OV, T=|125°C|2,2|mJ|
|di-/dt|=|1140|A/us|
|Temperature Sensor|
|Rs|3 %,|T, = 25|(100)|°C|1000(1670)|Q|
|Mechanical Data|

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**AC** 

© by SEMIKRON 

29-08-2008 LAN 

1 

## **SKiiP 13AC126V1** 

Fig. 1 Typ. output characteristic 

Fig. 3 Typ. transfer characteristic 

Fig. 5 Typ. Turn-on /-off energy = f (IC) 

Fig. 2 Typ. rated current vs. temperature 

Fig. 4 Reverse bias safe operating area 

Fig. 6 Typ. Turn-on /-off energy = f (RG) 

© by SEMIKRON 

29-08-2008 LAN 

2 

**SKiiP 13AC126V1** 

Fig. 7 Typ. gate charge characteristic 

Fig. 8 Typ. thermal impedance 

Fig. 9 Typ. freewheeling diode forward characteristic 

© by SEMIKRON 

29-08-2008 LAN 

3 

## **SKiiP 13AC126V1** 

This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. 

* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. 

© by SEMIKRON 

29-08-2008 LAN 

4