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SIZF914DT-T1-GE3
Dual MOSFET, N Channel + Schottky, 25 V, 25 V, 60 A, 60 A, 600 µohm
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Transistor Polarity:Dual N Channel + Schottky; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0006ohm; Rds(on) Test Voltage Vgs:10V; Thresho
- MSL: MSL 1 - Unlimited
- SVHC: Lead (07-Nov-2024)
- No. of Pins: 8Pins
- Channel Type: N Channel + Schottky
- Product Range: TrenchFET Gen IV SkyFET Series
- Qualification: -
- Transistor Case Style: PowerPAIR
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 60W
- Power Dissipation P Channel: 60W
- Drain Source Voltage Vds N Channel: 25V
- Drain Source Voltage Vds P Channel: 25V
- Continuous Drain Current Id N Channel: 60A
- Continuous Drain Current Id P Channel: 60A
- Drain Source On State Resistance N Channel: 600µohm
- Drain Source On State Resistance P Channel: 600µohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.56 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
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Updated at March 23, 2026