Illustrative purposes only
SIZ980BDT-T1-GE3
Dual MOSFET, N Channel + Schottky, 30 V, 197 A, 817 µohm, PowerPAIR
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 8Pins
- Channel Type: N Channel + Schottky
- Transistor Polarity: N Channel + Schottky
- Power Dissipation Pd: 66W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 817µohm
- Transistor Case Style: PowerPAIR
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 197A
- Power Dissipation N Channel: 66W
- Power Dissipation P Channel: 66W
- Gate Source Threshold Voltage Max: 2.2V
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 197A
- Continuous Drain Current Id P Channel: 197A
- Drain Source On State Resistance N Channel: 817µohm
- Drain Source On State Resistance P Channel: 817µohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.69 € |
| Current stock | 11877 |
| Lead time | 7 days |
Datasheet
|
|---|