SIZ350DT-T1-GE3

Dual MOSFET, N Channel, 30 V, 30 V, 30 A, 30 A, 5630 µohm

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Manufacturer: VISHAY
Product type: Dual MOSFETs
Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00563ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage
MSL: MSL 1 - Unlimited
SVHC: Lead (07-Nov-2024)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: TrenchFET Gen IV Series
Qualification: -
Transistor Case Style: PowerPAIR
Operating Temperature Max: 150°C
Power Dissipation N Channel: 16.7W
Power Dissipation P Channel: 16.7W
Drain Source Voltage Vds N Channel: 30V
Drain Source Voltage Vds P Channel: 30V
Continuous Drain Current Id N Channel: 30A
Continuous Drain Current Id P Channel: 30A
Drain Source On State Resistance N Channel: 5630µohm
Drain Source On State Resistance P Channel: 5630µohm

Delivery and price
Units per pack	5000
Price	0.355 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 23, 2026