SIZ200DT-T1-GE3

Dual MOSFET, N Channel, 30 V, 30 V, 61 A, 61 A, 4500 µohm

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Manufacturer: VISHAY
Product type: Dual MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0045ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2
MSL: MSL 1 - Unlimited
SVHC: Lead (21-Jan-2025)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: TrenchFET Gen IV Series
Qualification: -
Transistor Case Style: PowerPAIR
Operating Temperature Max: 150°C
Power Dissipation N Channel: 33W
Power Dissipation P Channel: 33W
Drain Source Voltage Vds N Channel: 30V
Drain Source Voltage Vds P Channel: 30V
Continuous Drain Current Id N Channel: 61A
Continuous Drain Current Id P Channel: 61A
Drain Source On State Resistance N Channel: 4500µohm
Drain Source On State Resistance P Channel: 4500µohm

Delivery and price
Units per pack	5000
Price	0.311 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 23, 2026