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SIZ200DT-T1-GE3
Dual MOSFET, N Channel, 30 V, 30 V, 61 A, 61 A, 4500 µohm
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- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0045ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2
- MSL: MSL 1 - Unlimited
- SVHC: Lead (04-Feb-2026)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: TrenchFET Gen IV Series
- Qualification: -
- Transistor Case Style: PowerPAIR
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 33W
- Power Dissipation P Channel: 33W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 61A
- Continuous Drain Current Id P Channel: 61A
- Drain Source On State Resistance N Channel: 4500µohm
- Drain Source On State Resistance P Channel: 4500µohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.38 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**SiZ200DT** Vishay Siliconix **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> www.vishay.com<br>**----- End of picture text -----**<br> ## **Dual N-Channel 30 V (D-S) MOSFETs** **==> picture [190 x 104] intentionally omitted <==** **----- Start of picture text -----**<br> PowerPAIR [®] 3 x 3S<br>S2 S62 S72 G82<br>5<br>D1<br>1<br>2<br>NN uo” 1 D41 D31 D1 G1<br>Top View Bottom View<br>3.3 mm<br>S(Pin 9)1/D2<br>3.3 mm<br>**----- End of picture text -----**<br> ## **PRODUCT SUMMARY** |**PRODUCT SUMMARY**|**PRODUCT SUMMARY**|**PRODUCT SUMMARY**| |---|---|---| ||**CHANNEL-1**|**CHANNEL-2**| |VDS (V)|30|30| |RDS(on)max.()at VGS= 10 V|0.0055|0.0058| |RDS(on)max.()at VGS= 4.5 V|0.0073|0.0077| |Qgtyp.(nC)|8.4|9.2| |g<br>ID (A)|61a|60a| |Configuration|Dual|| ## **FEATURES** - TrenchFET[®] Gen IV power MOSFETs - 100 % Rg and UIS tested - Optimized Qgs/Qgs ratio improves switching characteristics • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ## **APPLICATIONS** **==> picture [77 x 95] intentionally omitted <==** **----- Start of picture text -----**<br> D1<br>G1 od<br>N-Channel 1<br>MOSFET S1/D2<br>G2 o_!<br>N-Channel 2<br>MOSFET<br>S2<br>**----- End of picture text -----**<br> - CPU core power - Computer / server peripherals - POL - Synchronous buck converter - Telecom DC/DC ## **ORDERING INFORMATION** Package PowerPAIR 3 x 3S Lead (Pb)-free and halogen-free SiZ200DT-T1-GE3 |**ABSOLUTE MAXIMUM RATINGS** (TA= 25 °C,unless otherwise noted)<br>~~|~~|**ABSOLUTE MAXIMUM RATINGS** (TA= 25 °C,unless otherwise noted)<br>~~|~~|**ABSOLUTE MAXIMUM RATINGS** (TA= 25 °C,unless otherwise noted)<br>~~|~~|**ABSOLUTE MAXIMUM RATINGS** (TA= 25 °C,unless otherwise noted)<br>~~|~~|**ABSOLUTE MAXIMUM RATINGS** (TA= 25 °C,unless otherwise noted)<br>~~|~~|**ABSOLUTE MAXIMUM RATINGS** (TA= 25 °C,unless otherwise noted)<br>~~|~~| |---|---|---|---|---|---| |**PARAMETER**<br>~~eG~~||**SYMBOL**<br>~~eG~~<br>~~—~~|**CHANNEL-1**<br>~~eG~~<br>~~—~~|**CHANNEL-2**<br>~~eG~~|**UNIT**<br>~~eG~~| |Drain-source voltage<br>~~oo~~||VDS<br>~~oo~~<br>~~—~~|30<br>~~oo~~<br>~~—~~|30<br>~~oo~~|V<br>~~oo~~<br>~~ee~~| |Gate-source voltage<br>~~oo~~<br>~~a~~<br>~~|~~||VGS<br>~~oo~~<br>~~—~~<br>~~a~~|+20,-16<br>~~oo~~<br>~~—~~<br>~~a~~<br>~~ee~~|+20,-16<br>~~oo~~<br>~~a~~<br>~~ee~~|| |Continuous drain current (TJ= 150 °C)<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|TC= 25 °C<br>~~|~~<br>~~|~~<br>~~|~~|ID<br>~~— ~~|61a<br> ~~—~~<br>~~ee~~<br>~~Po~~<br>~~==—~~|60a<br>~~ee~~<br>~~Po~~<br>~~==—~~|A<br>~~ee~~<br>~~==—~~| ||TC= 70 °C<br>~~|~~<br>~~|~~<br>~~|~~||49<br>~~ee~~<br>~~Po~~<br>~~==—~~|48<br>~~ee~~<br>~~Po~~<br>~~==—~~|| ||TA= 25 °C<br>~~|~~<br>~~|~~<br>~~|~~||22b, c<br>~~Po~~<br>~~Po~~<br>~~==—~~|22b, c<br>~~Po~~<br>~~Po~~<br>~~==—~~|| ||TA= 70 °C<br>~~|~~<br>~~—~~<br>~~|~~||18b, c<br>~~Po~~<br>~~I~~<br>~~==—~~|17b, c<br>~~Po~~<br>~~==—~~|| |Pulsed drain current(100μspulse width)<br>~~|~~<br>~~GO~~<br>~~—~~<br>~~|~~||IDM<br>~~GO~~|130<br>~~Po~~<br>~~GO~~<br>~~I~~<br>~~==—~~|130<br>~~Po~~<br>~~GO~~<br>~~==—~~|| |Continuous source drain diode current<br>~~GO~~<br>~~ee~~<br>~~|~~|TC= 25 °C<br>~~GO~~<br>~~ee~~<br>~~—~~<br>~~|~~|IS<br>~~GO~~<br>~~ee~~|27<br>~~GO~~<br>~~I~~<br>~~ee~~<br>~~==—~~|27<br>~~GO~~<br>~~ee~~<br>~~==—~~|| ||TA= 25 °C<br>~~ee~~<br>~~—~~<br>~~|~~||3.6b, c<br>~~ee~~<br>~~==—~~|3.6b, c<br>~~ee~~<br>~~==—~~|| |Singlepulse avalanche current<br>~~|~~<br>~~oF~~|L = 0.1 mH<br>~~—~~<br>~~|~~<br>~~oF~~|IAS<br>~~oF~~|15<br>~~==—~~|15<br>~~==—~~|| |Singlepulse avalanche energy<br>~~oF~~||EAS<br>~~oF~~|11|11|mJ| |Maximum power dissipation<br>~~|~~<br>~~|~~<br>~~|~~|TC= 25 °C<br>~~|~~|PD|33<br>~~Po~~|33<br>~~Po~~|W| ||TC= 70 °C<br>~~|~~<br>~~|~~||21<br>~~Po~~<br>~~Po~~|21<br>~~Po~~<br>~~Po~~|| ||TA= 25 °C<br>~~|~~<br>~~|~~<br>~~|~~||4.3b, c<br>~~Po~~<br>~~Po~~<br>~~Po~~|4.3b, c<br>~~Po~~<br>~~Po~~<br>~~Po~~|| ||TA= 70 °C<br>~~|~~<br>~~|~~||2.8b, c<br>~~Po~~<br>~~Po~~|2.8b, c<br>~~Po~~<br>~~Po~~|| |Operating junction and storage temperature range<br>~~|~~<br>~~a~~||TJ,Tstg<br>~~a~~|-55 to +150<br>~~Po~~<br>~~a~~||°C<br>~~a~~| |Solderingrecommendations(peak temperature) d<br>~~a~~<br>~~ef~~||~~a~~<br>~~ef~~|260<br>~~a~~<br>~~ef~~||| ## **Notes** a. TC = 25 °C - b. Surface mounted on 1" x 1" FR4 board c. t = 10 s - d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR 3 x 3S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection - e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 64 °C/W for channel-1 and 64 °C/W for channel-2 S19-0937-Rev. B, 11-Nov-2019 Document Number: 75033 **1** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SiZ200DT** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com Vishay Siliconix |**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|||||| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNIT**| |**Static**|||||||| |Drain-source breakdown voltage|VDS|VGS= 0 V, ID= 250 μA|Ch-1|30|-|-|V| |||VGS= 0 V, ID= 250 μA|Ch-2|30|-|-|| |VDSTemperature coefficient|VDS/TJ|ID= 250 μA|Ch-1|-|13|-|mV/°C| |||ID= 250 μA|Ch-2|-|18|-|| |VGS(th)Temperature coefficient|VGS(th)/TJ|ID= 250 μA|Ch-1|-|-5.2|-|| |||ID= 250 μA|Ch-2|-|-5.1|-|| |Gate threshold voltage|VGS(th)|VDS= VGS, ID= 250 μA|Ch-1|1.1|-|2.4|V| |||VDS= VGS, ID= 250 μA|Ch-2|1.1|-|2.4|| |Gate source leakage|IGSS|VDS= 0 V, VGS= +20 V, -16 V|Ch-1|-|-|± 100|nA| |||VDS= 0 V, VGS= +20 V, -16 V|Ch-2|-|-|± 100|| |Zero gate voltage drain current|IDSS|VDS= 30 V, VGS= 0 V|Ch-1|-|-|1|μA| |||VDS= 30 V, VGS= 0 V|Ch-2|-|-|1|| |||VDS= 30 V, VGS= 0 V, TJ= 55 °C|Ch-1|-|-|5|| |||VDS= 30 V, VGS= 0 V, TJ= 55 °C|Ch-2|-|-|5|| |On-state drain currentb|ID(on)|VDS 5 V, VGS= 10 V|Ch-1|10|-|-|A| |||VDS 5 V, VGS= 10 V|Ch-2|10|-|-|| |Drain-source on-state resistanceb|RDS(on)|VGS= 10 V, ID= 10 A|Ch-1|-|0.0045|0.0055|| |||VGS= 10 V, ID= 10 A|Ch-2|-|0.0048|0.0058|| |||VGS= 4.5 V, ID= 7 A|Ch-1|-|0.0057|0.0073|| |||VGS= 4.5 V, ID= 7 A|Ch-2|-|0.0060|0.0077|| |Forward transconductanceb|gfs|VDS= 10 V, ID= 30 A|Ch-1|-|118|-|S| |||VDS= 10 V, ID= 30 A|Ch-2|-|105|-|| |**Dynamica**|||||||| |Input capacitance|Ciss|Channel-1<br>VDS= 15 V, VGS= 0 V, f = 1 MHz<br>Channel-2<br>VDS= 15 V, VGS= 0 V, f = 1 MHz|Ch-1|-|1510|-|pF| ||||Ch-2|-|1600|-|| |Output capacitance|Coss||Ch-1|-|590|-|| ||||Ch-2|-|620|-|| |Reverse transfer capacitance|Crss||Ch-1|-|28|-|| ||||Ch-2|-|27|-|| |Crss/Cissratio|||Ch-1|-|0.019|0.040|| ||||Ch-2|-|0.017|0.035|| |Total gate charge|Qg|VDS= 15 V, VGS= 10 V, ID= 10 A|Ch-1|-|18.3|28|nC| |||VDS= 15 V, VGS= 10 V, ID= 10 A|Ch-2|-|20|30|| |||VDS= 15 V, VGS= 4.5 V, ID= 10 A|Ch-1|-|8.4|13|| |||VDS= 15 V, VGS= 4.5 V, ID= 10 A|Ch-2|-|9.2|14|| |Gate-source charge|Qgs|Channel-1<br>VDS= 15 V, VGS= 4.5 V, ID= 10 A<br>Channel-2<br>VDS= 15 V, VGS= 4.5 V, ID= 10 A|Ch-1|-|3.7|-|| ||||Ch-2|-|4.5|-|| |Gate-drain charge|Qgd||Ch-1|-|1|-|| ||||Ch-2|-|1|-|| |Output charge|Qoss|VDS= 15 V, VGS= 0 V|Ch-1|-|17|-|| ||||Ch-2|-|18|-|| |Gate resistance|Rg|f = 1 MHz|Ch-1|0.28|1.4|2.8|| ||||Ch-2|0.2|1|2|| S19-0937-Rev. B, 11-Nov-2019 Document Number: 75033 **2** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SiZ200DT** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com |**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|||||| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX.**|**UNIT**| |**Dynamica**|||||||| |Turn-on delay time|td(on)|Channel-1<br>VDD= 15 V, RL= 3<br>ID 5 A, VGEN= 10 V, Rg= 1<br>Channel-2<br>VDD= 15 V, RL= 3<br>ID 5 A, VGEN= 10 V, Rg= 1|Ch-1|-|11|20|ns| ||||Ch-2|-|11|20|| |Rise time|tr||Ch-1|-|5|10|| ||||Ch-2|-|5|10|| |Turn-off delay time|td(off)||Ch-1|-|23|45|| ||||Ch-2|-|23|45|| |Fall time|tf||Ch-1|-|5|10|| ||||Ch-2|-|5|10|| |Turn-on delay time|td(on)|Channel-1<br>VDD= 15 V, RL= 3<br>ID 5 A, VGEN= 4.5 V, Rg= 1<br>Channel-2<br>VDD= 15 V, RL= 3<br>ID 5 A, VGEN= 4.5 V, Rg= 1|Ch-1|-|17|35|| ||||Ch-2|-|20|40|| |Rise time|tr||Ch-1|-|40|80|| ||||Ch-2|-|42|80|| |Turn-off delay time|td(off)||Ch-1|-|23|45|| ||||Ch-2|-|25|50|| |Fall time|tf||Ch-1|-|7|15|| ||||Ch-2|-|10|20|| |**Drain-Source Body Diode Characteristics**|||||||| |Continuous source-drain diode current|IS|TC= 25 °C|Ch-1|-|-|27|A| ||||Ch-2|-|-|27|| |Pulse diode forward current (t = 100 μs)|ISM||Ch-1|-|-|130|| ||||Ch-2|-|-|130|| |Body diode voltage|VSD|IS= 5 A, VGS= 0 V|Ch-1|-|0.8|1.2|V| |||IS= 5 A, VGS= 0 V|Ch-2|-|0.8|1.2|| |Body diode reverse recovery time|trr|Channel-1<br>IF= 5 A, di/dt = 100 A/μs,<br>TJ= 25 °C<br>Channel-2<br>IF= 5 A, di/dt = 100 A/μs,<br>TJ= 25 °C|Ch-1|-|35|70|ns| ||||Ch-2|-|35|70|| |Body diode reverse recovery charge|Qrr||Ch-1|-|25|50|nC| ||||Ch-2|-|25|50|| |Reverse recovery fall time|ta||Ch-1|-|18|-|ns| ||||Ch-2|-|21|-|| |Reverse recovery rise time|tb||Ch-1|-|17|-|| ||||Ch-2|-|14|-|| ## **Notes** a. Guaranteed by design, not subject to production testing b. Pulse test; pulse width 300 μs, duty cycle 2 % _Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ S19-0937-Rev. B, 11-Nov-2019 Document Number: 75033 **3** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SiZ200DT** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **CHANNEL-1 TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [238 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>120 10000<br>VGS = 10 V thru 4 V<br>100<br>80 1000<br>VGS = 3 V<br>60<br>40 100<br>20<br>0 10<br>0 0.5 1 1.5 2<br>VDS - Drain-to-Source Voltage (V)<br>2nd line<br>2nd line 1st line 2nd line<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> ## **Output Characteristics** **==> picture [239 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>10000<br>0.0082<br>0.0062 VGS = 4.5 V 1000<br>0.0042<br>VGS = 10 V 100<br>0.0022<br>0.0002 10<br>0 20 40 60 80 100 120<br>ID - Drain Current (A)<br>2nd line<br>2nd line 1st line 2nd line<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **On-Resistance vs. Drain Current** **==> picture [238 x 373] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>120 10000<br>100<br>80 1000<br>60 T C = 25 °C<br>40 100<br>20 TC = 125 °C<br>TC = -55 °C<br>0 10<br>0 1 2 3 4<br>VGS - Gate-to-Source Voltage (V)<br>2nd line<br>Transfer Characteristics<br>Axis Title<br>2500 10000<br>2000<br>Ciss 1000<br>1500<br>1000<br>Coss 100<br>500<br>Crss<br>0 10<br>0 5 10 15 20 25 30<br>VDS - Drain-to-Source Voltage (V)<br>2nd line<br>2nd line 1st line 2nd line<br> - Drain Current (A)<br>ID<br>2nd line 1st line 2nd line<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br> **Capacitance** **==> picture [238 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>10 10000<br>ID = 10 A<br>8 VDS = 15 V<br>1000<br>6<br>VDS = 7.5 V<br>4<br>VDS = 24 V 100<br>2<br>0 10<br>0 4 8 12 16 20<br>Qg - Total Gate Charge (nC)<br>2nd line<br>Gate Charge<br>2nd line 1st line 2nd line<br> - Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br> **==> picture [238 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>1.6 10000<br>ID = 10 A<br>1.4 VGS = 10 V<br>1000<br>1.2<br>VGS = 4.5 V<br>1.0<br>100<br>0.8<br>0.6 10<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Junction Temperature (°C)<br>2nd line<br>2nd line 1st line 2nd line<br> - On-Resistance (Normalized)<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [157 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> On-Resistance vs. Junction Temperature<br>**----- End of picture text -----**<br> Document Number: 75033 S19-0937-Rev. B, 11-Nov-2019 **4** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SiZ200DT** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **CHANNEL-1 TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [238 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>100 10000<br>TJ = 150 ° C<br>10 1000<br>T J = 25 °C<br>1 100<br>0.1 10<br>0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD - Source-to-Drain Voltage (V)<br>2nd line<br>2nd line 1st line 2nd line<br> - Source Current (A)<br>IS<br>**----- End of picture text -----**<br> ## **Source-Drain Diode Forward Voltage** **==> picture [230 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>1.8 10000<br>1.6<br>1000<br>1.4 I D = 250 μA<br>1.2<br>100<br>1.0<br>0.8 10<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Temperature (°C)<br>2nd line<br> (V)<br>GS(th)<br>V 1st line 2nd line<br>**----- End of picture text -----**<br> **Threshold Voltage** **==> picture [238 x 373] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>0.03 10000<br>ID = 10 A<br>0.025<br>0.02 1000<br>0.015<br>0.01 T J = 125 °C 100<br>0.005<br>TJ = 25 °C<br>0 10<br>0 2 4 6 8 10<br>VGS - Gate-to-Source Voltage (V)<br>2nd line<br>On-Resistance vs. Gate-to-Source Voltage<br>Axis Title<br>50 10000<br>40<br>1000<br>30<br>20<br>100<br>10<br>0 10<br>0.001 0.01 0.1 1 10 100 1000<br>Time (s)<br>2nd line<br>2nd line 1st line 2nd line<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>2nd line 1st line 2nd line<br>Power (W)<br>**----- End of picture text -----**<br> **Single Pulse Power, Junction-to-Ambient** **==> picture [218 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>1000 10000<br>ID(ON) Limited Limited by RDS(on) (1) IDM Limited<br>100<br>1000<br>10 100 μ s<br>1 ms<br>1 10 ms<br>100 m s 100<br>1 s<br>0.1 10 s<br>DC<br>Single pulseTA = 25 °C BV dss Limited<br>0.01 10<br>0.01 0.1 1 10 100<br>VDS - Drain-to-Source Voltage (V)<br>(1) VGS > minimum VGS at which RDS(on) is specified<br>2nd line<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **Safe Operating Area, Junction-to-Ambient** S19-0937-Rev. B, 11-Nov-2019 Document Number: 75033 **5** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SiZ200DT** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **CHANNEL-1 TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [238 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>80 10000<br>60<br>1000<br>40<br>100<br>20<br>0 10<br>0 25 50 75 100 125 150<br>TC - Case Temperature (°C)<br>2nd line<br>Current Derating [a]<br>2nd line 1st line 2nd line<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **==> picture [238 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>40 10000<br>30<br>1000<br>20<br>100<br>10<br>0 10<br>0 25 50 75 100 125 150<br>TC - Case Temperature (°C)<br>2nd line<br>Power, Junction-to-Case<br>2nd line 1st line 2nd line<br>Power (W)<br>**----- End of picture text -----**<br> ## **Note** a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S19-0937-Rev. B, 11-Nov-2019 Document Number: 75033 **6** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SiZ200DT** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **CHANNEL-1 TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [460 x 382] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>1 10000<br>Duty Cycle = 0.5<br>0.2 Notes:<br>1000<br>0.1 PDM<br>0.1<br>0.05 t 1<br>t2 t 1 100<br>0.02 1. Duty Cycle, D = t2<br>2. Per Unit Base = RthJA = 64 °C/W<br>3. T JM - T A = P DM Z thJA [(t)]<br>Single pulse<br>4. Surface Mounted<br>0.01 10<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>Square Wave Pulse Duration (s)<br>2nd line<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br>Axis Title<br>1 10000<br>Duty Cycle = 0.5<br>1000<br>0.2<br>0.1<br>100<br>0.05<br>0.02<br>Single pulse<br>0.1 10<br>0.0001 0.001 0.01 0.1<br>Square Wave Pulse Duration (s)<br>2nd line<br>1st line 2nd line<br>Thermal Impedance<br>Normalized Effective Transient<br>1st line 2nd line<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br> **Normalized Thermal Transient Impedance, Junction-to-Case** S19-0937-Rev. B, 11-Nov-2019 Document Number: 75033 **7** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SiZ200DT** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **CHANNEL-2 TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [238 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>120 10000<br>VGS = 10 V thru 4 V<br>100<br>80 1000<br>60<br>VGS = 3 V<br>40 100<br>20<br>0 10<br>0 0.5 1 1.5 2<br>VDS - Drain-to-Source Voltage (V)<br>2nd line<br>2nd line 1st line 2nd line<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> ## **Output Characteristics** **==> picture [239 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>0.010 10000<br>0.008<br>VGS = 4.5 V<br>1000<br>0.006<br>0.004<br>VGS = 10 V 100<br>0.002<br>0 10<br>0 20 40 60 80 100 120<br>ID - Drain Current (A)<br>2nd line<br>2nd line 1st line 2nd line<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **On-Resistance vs. Drain Current** **==> picture [238 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>10 10000<br>ID = 10 A<br>8 VDS = 15 V<br>1000<br>6<br>VDS = 7.5 V<br>4<br>VDS = 24 V 100<br>2<br>0 10<br>0 4 8 12 16 20<br>Qg - Total Gate Charge (nC)<br>2nd line<br>2nd line 1st line 2nd line<br> - Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br> **Gate Charge** **==> picture [238 x 575] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>120 10000<br>100<br>80 1000<br>60 T C = 25 °C<br>40 100<br>TC = 125 °C<br>20<br>TC = -55 °C<br>0 10<br>0 1 2 3 4<br>VGS - Gate-to-Source Voltage (V)<br>2nd line<br>Transfer Characteristics<br>Axis Title<br>2500 10000<br>2000<br>Ciss 1000<br>1500<br>1000<br>Coss 100<br>500<br>Crss<br>0 10<br>0 5 10 15 20 25 30<br>VDS - Drain-to-Source Voltage (V)<br>2nd line<br>Capacitance<br>Axis Title<br>1.6 10000<br>ID = 10 A<br>1.4 VGS = 10 V<br>1000<br>1.2<br>VGS = 4.5 V<br>1.0<br>100<br>0.8<br>0.6 10<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Junction Temperature (°C)<br>2nd line<br>2nd line 1st line 2nd line<br> - Drain Current (A)<br>ID<br>2nd line 1st line 2nd line<br>C - Capacitance (pF)<br>2nd line 1st line 2nd line<br> - On-Resistance (Normalized)<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **On-Resistance vs. Junction Temperature** Document Number: 75033 S19-0937-Rev. B, 11-Nov-2019 **8** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SiZ200DT** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **CHANNEL-2 TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [238 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>100 10000<br>TJ = 150 ° C<br>10 1000<br>T J = 25 °C<br>1 100<br>0.1 10<br>0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD - Source-to-Drain Voltage (V)<br>2nd line<br>2nd line 1st line 2nd line<br> - Source Current (A)<br>IS<br>**----- End of picture text -----**<br> ## **Source-Drain Diode Forward Voltage** **==> picture [238 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>0.02 10000<br>ID = 10 A<br>0.015<br>1000<br>0.01<br>TJ = 125 °C<br>100<br>0.005<br>TJ = 25 °C<br>0 10<br>0 2 4 6 8 10<br>VGS - Gate-to-Source Voltage (V)<br>2nd line<br>2nd line 1st line 2nd line<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>**----- End of picture text -----**<br> ## **On-Resistance vs. Gate-to-Source Voltage** **==> picture [230 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>2.0 10000<br>1.8<br>1.6 ID = 250μA 1000<br>1.4<br>1.2 100<br>1.0<br>0.8 10<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Temperature (°C)<br>2nd line<br> (V)<br>GS(th)<br>V 1st line 2nd line<br>**----- End of picture text -----**<br> **Threshold Voltage** **==> picture [238 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>50 10000<br>40<br>1000<br>30<br>20<br>100<br>10<br>0 10<br>0.001 0.01 0.1 1 10 100 1000<br>Time (s)<br>2nd line<br>2nd line 1st line 2nd line<br>Power (W)<br>**----- End of picture text -----**<br> **Single Pulse Power, Junction-to-Ambient** **==> picture [218 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>1000 10000<br>ID(ON) Limited Limited by RDS(on) (1) IDM Limited<br>100<br>1000<br>10 100 μ s<br>1 ms<br>1 10 ms<br>100 m s 100<br>1 s<br>0.1 10 s<br>DC<br>Single pulseTA = 25 °C BV dss Limited<br>0.01 10<br>0.01 0.1 1 10 100<br>VDS - Drain-to-Source Voltage (V)<br>(1) VGS > minimum VGS at which RDS(on) is specified<br>2nd line<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **Safe Operating Area, Junction-to-Ambient** S19-0937-Rev. B, 11-Nov-2019 Document Number: 75033 **9** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SiZ200DT** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **CHANNEL-2 TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [238 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>80 10000<br>60<br>1000<br>40<br>100<br>20<br>0 10<br>0 25 50 75 100 125 150<br>TC - Case Temperature (°C)<br>2nd line<br>Current Derating [a]<br>2nd line 1st line 2nd line<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **==> picture [238 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>40 10000<br>30<br>1000<br>20<br>100<br>10<br>0 10<br>0 25 50 75 100 125 150<br>TC - Case Temperature (°C)<br>2nd line<br>Power, Junction-to-Case<br>2nd line 1st line 2nd line<br>Power (W)<br>**----- End of picture text -----**<br> ## **Note** a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S19-0937-Rev. B, 11-Nov-2019 Document Number: 75033 **10** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SiZ200DT** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** ## www.vishay.com ## **CHANNEL-2 TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [460 x 382] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>1 10000<br>Duty Cycle = 0.5<br>0.2 Notes:<br>1000<br>0.1 PDM<br>0.1<br>0.05 t1<br>0.02 1. Duty Cycle, D = t 2 tt1 2 100<br>2. Per Unit Base = RthJA = 64 °C/W<br>3. TJM - TA = PDMZthJA [(t)]<br>Single pulse 4. Surface Mounted<br>0.01 10<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>Square Wave Pulse Duration (s)<br>2nd line<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br>Axis Title<br>1 10000<br>Duty Cycle = 0.5<br>1000<br>0.2<br>0.1<br>100<br>0.05<br>0.02<br>Single pulse<br>0.1 10<br>0.0001 0.001 0.01 0.1<br>Square Wave Pulse Duration (s)<br>2nd line<br>1st line 2nd line<br>Thermal Impedance<br>Normalized Effective Transient<br>1st line 2nd line<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br> ## **Normalized Thermal Transient Impedance, Junction-to-Case** _Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75033._ S19-0937-Rev. B, 11-Nov-2019 Document Number: 75033 **11** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Package Information** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **PowerPAIR[®] 3.3 x 3.3 Case Outline** **==> picture [428 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 0.1 C 0.08 C<br>A * Indicates pin #1 orientation (optional)<br>2 x<br>0.1 C C L<br>D A1 K2 D1 K1 D2 K<br>*<br>1 8 8 1<br>2 7 7 2<br>3 6 6 3<br>4 5 5 4<br>C<br>K3<br>b1<br>e<br>E E1<br>b<br>C<br>0.1<br>2 x<br>**----- End of picture text -----**<br> |**DIM.**|**MILLIMETERS**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**INCHES**| |---|---|---|---|---|---|---| ||**MIN.**|**NOM.**|**MAX.**|**MIN.**|**NOM.**|**MAX.**| |A|0.70|0.75|0.80|0.028|0.030|0.031| |A1|0.00|-|0.05|0.000|-|0.002| |b|0.35|0.40|0.45|0.014|0.016|0.018| |b1|0.20|0.25|0.38|0.008|0.010|0.015| |C|0.18|0.20|0.23|0.007|0.008|0.009| |D|3.20|3.30|3.40|0.126|0.130|0.134| |D1|0.86|0.91|0.96|0.034|0.036|0.038| |D2|0.79|0.84|0.89|0.031|0.033|0.035| |E|3.20|3.30|3.40|0.126|0.130|0.134| |E1|2.65|2.70|2.75|0.104|0.106|0.108| |e|0.65 BSC|||0.026 BSC||| |K|0.25 ref.|||0.010 ref.||| |K1|0.35 ref.|||0.014 ref.||| |K2|0.32 ref.|||0.013 ref.||| |K3|0.30 ref.|||0.012 ref.||| |L|0.27|0.32|0.37|0.011|0.013|0.015| |C18-0564-Rev. A, 14-May-2018<br>DWG: 6066||||||| |||||||| ## **Notes** > (1) Use millimeters as the primary measurement > (2) Dimensioning and tolerances conform to ASME Y14.5M - 1994 > (3) N is the number of terminals; Nd is the number of terminals in X-direction; Ne is the number of terminals in Y-direction > (4) Dimension b applies to plated terminal and is measured between 0.20 mm and 0.25 mm from terminal tip > (5) The pin # 1 identifier must be existed on the top surface of the package by using indentation mark or other feature of package body > (6) Exact shape and size of this features is optional > (7) Package warpage max. 0.08 mm > (8) Applied only for terminals Revision: 14-May-2018 Document Number: 76654 **1** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **PAD Pattern** Vishay Siliconix www.vishay.com ## **Recommended Land Pattern for Symmetrical PowerPAIR[®] 3 x 3** **==> picture [180 x 145] intentionally omitted <==** **----- Start of picture text -----**<br> 1 8<br>2 7<br>3 6<br>4 5<br>**----- End of picture text -----**<br> **==> picture [257 x 256] intentionally omitted <==** **----- Start of picture text -----**<br> 3.30<br>0.2 1.005<br>0.935 0.25 0.59<br>0.32 0.27<br>1 8<br>2 7<br>3 6<br>4 5<br>0.30<br>0.62<br>0.25<br>0.675<br>0.44<br>0.65<br>3.30 0.65 2.80<br>0.65<br>0.675<br>0.25<br>**----- End of picture text -----**<br> Revision: 07-Sep-2020 Document Number: 76474 **1** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Legal Disclaimer Notice** Vishay www.vishay.com **==> picture [59 x 48] intentionally omitted <==** ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. _**© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ Revision: 01-Jan-2019 Document Number: 91000 **1**
Updated at June 9, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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