SIX3K4N10L-TP

**��X3K4N10L** 

## **Features** 

- Trench MV MOSFET Technology 

- Low Input Capacitance 

- Moisture Sensitivity Level 1 

- Epoxy Meets UL 94 V-0 Flammability Rating 

- Halogen Free. “Green” Device[ (Note 1)] 

- Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) 

## **����� N-Channel MOSFET** 

## **Maximum Ratings** 

- Operating Junction Temperature Range: -55°C to +150°C 

- Storage Temperature Range: -55°C to +150°C 

- Thermal Resistance: 350°C/W Junction to Ambient[(Note 2) ] 

|•<br>Thermal Resistance: 350°C|/W Junction t|o Ambien|t(Note 2)||
|---|---|---|---|---|
|Parameter||Symbol|Rating|Unit|
|Drain-Source Voltage||VDS|100|V|
|Gate-Source Voltage||VGS|±20|V|
|Drain Current-Continuous|TA=25°C|ID|0.2|A|
||TA=70°C||0.125||
|Drain Current-Pulsed(Note 3)||IDM|0.8|A|
|Power Dissipation(Note 4)||PD|0.35|W|
||||||



Note: 

1. Halogen free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

2. The value of RθJA is measured with the device mounted on 1in[2] FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 

3. Repetitive rating; pulse width limited by max. junction temperature. 

4. PD is based on max. junction temperature, using junction-ambient thermal resistance. 

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SOT-563<br>A<br>6 5 4<br>B C<br>1 2 3<br>D<br>G<br>K M<br>H L<br>**----- End of picture text -----**<br>


||DIMENSIONS|DIMENSIONS|DIMENSIONS|DIMENSIONS|DIMENSIONS|
|---|---|---|---|---|---|
|DIM|INCHES||MM||NOTE|
||MIN|MAX|MIN|MAX||
|A|0.006|0.011|0.15|0.30||
|B|0.043|0.051|1.10|1.30||
|C|0.059|0.067|1.50|1.70||
|D|0.020||0.50||TYP.|
|G|0.035|0.043|0.90|1.10||
|H|0.059|0.067|1.50|1.70||
|K|0.022|0.026|0.55|0.65||
|L|0.004|0.011|0.10|0.30||
|M|0.004|0.007|0.10|0.18||



## **Internal Structure�����������������** 

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D1 G2 S2 6       5 4<br>6 5 4<br>3K4N<br>1  2 3<br>1 2 3<br>S1 G1 D2<br>**----- End of picture text -----**<br>


## **Suggested Solder Pad Layout** 

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Unit:mm<br>0.30<br>0.50<br>0.30<br>1.40<br>1.00<br>**----- End of picture text -----**<br>


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## **ELECTRICAL CHARACTERISTICS (Ta=25** � **unless otherwise specified)** 

|**Parameter**|**Symbol**|**Test   conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|**Static Characteristics**|||||||
|Drain-Source Breakdown Voltage|V(BR)DSS|VGS=0V, ID=250µA|100|||V|
|Gate-Threshold Voltage|VGS(th)|VDS=VGS, ID=250µA|1.0|1.8|2.5|V|
|Gate-Body Leakage Current|IGSS|VGS=±20V, VDS=0V|||±100|nA|
|Zero Gate Voltage Drain Current|IDSS|VDS=100V, VGS=0V|||1|µA|
|Drain-Source On-Resistance|RDS(on)|VGS=10V, ID=0.2A||2.6|3.4|Ω|
|||VGS=4.5V, ID=0.2A||2.8|3.6||
|Gate Resistance|Rg|f=1 MHz, Open drain||5.5||Ω|
|**Diode Characteristics**|||||||
|Continuous Body Diode Current|IS||||0.2|A|
|Diode Forward Voltage|VSD|VGS=0V, IS=0.2A|||1.2|V|
|Reverse Recovery Time|trr|IF=0.2A, dIF/dt=100A/μs||20||ns|
|Reverse Recovery Charge|Qrr|||6||nC|
|**Dynamic Characteristics**|||||||
|Input Capacitance|Ciss|VDS=50V,VGS=0V,f=1MHz||34||pF|
|Output Capacitance|Coss|||3.5|||
|Reverse Transfer Capacitance|Crss|||1|||
|Total Gate Charge|Qg|VDS=10V,VGS=50V,ID=0.2A||1.8||nC|
|Gate-Source Charge|Qgs|||0.6|||
|Gate-Drain Charge|Qgd|||0.3|||
|Turn-On  Delay Time|td(on)|VGS=50V,VDS=10V<br>ID=0.2A,RG=3Ω||4||ns|
|Turn-On  Rise Time|tr|||20|||
|Turn-Off  Delay Time|td(off)|||7|||
|Turn-Off  Fall Time|tf|||31|||



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## **Curve Characteristics** 

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Fig. 1 - Typical Output Characteristics Fig. 2 - Transfer Characteristics<br>1.0 1.0<br>VGS=10V,6V,4.5V,4V VDS= 5V 25°C<br>0.8 0.8<br>0.6 0.6<br>150°C<br>0.4 VGS=3V 0.4<br>0.2 0.2<br>VGS=2.5V<br>0.0 0.0<br>0 1 2 3 4 5 1 2 3 4 5<br>Drain to Source Voltage (V) Gate to Source Voltage (V)<br>Drain Current (A) Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig. 3 - RDS(ON)-VGS** 

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10<br>ID=0.2A<br>8<br>6<br>4<br>25°C<br>2<br>0<br>2 4 6 8 10<br>Gate to Source Voltage (V)<br>Drain-Source On-Resistance (Ω)<br>**----- End of picture text -----**<br>


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Fig. 5 - Capacitance Characteristics<br>100<br>Ciss<br>10<br>Coss<br>1<br>Crss<br>0.1<br>0 20 40 60 80 100<br>Drain to Source Voltage (V)<br>Capacitance (pF)<br>**----- End of picture text -----**<br>


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Fig. 4 - RDS(ON)-ID<br>8<br>6<br>4 V GS =4.5V<br>2 VGS=10V<br>0<br>0.0 0.2 0.4 0.6 0.8<br>Drain Current (A)<br>Fig. 6 - Gate Charge<br>10<br>VDS=50V<br>ID=0.2A<br>8<br>6<br>4<br>2<br>0<br>0.0 0.5 1.0 1.5 2.0<br>Gate Charge(nC)<br>Drain-Source On Resistance (Ω)<br>Gate-Source Voltage (V)<br>**----- End of picture text -----**<br>


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## **Curve Characteristics** 

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Fig. 7 - Normalized Threshold Voltage<br>1.4<br>1.2<br>ID=250μA<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature  (°C)<br>Fig. 9 - IS-VSD<br>1<br>V GS =0V<br>150°C 25°C<br>0.1<br>0.6 0.7 0.8  0.9 1.0 1.1<br>Source To Drain Voltage (V)<br>Fig. 11 - PD Dissipation<br>0.4<br>0.3<br>0.2<br>0.1<br>0.0<br>0 25 50 75 100 125 150<br>TA Temperature (°C)<br>VGS(th) - Threshold Voltage Normalized<br>Source Current (A)<br>Power Dissipation (W)<br>**----- End of picture text -----**<br>


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Fig. 8 - Normalized On Resistance Characteristics<br>3.0<br>VGS=10V<br>ID=0.2A<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature  (°C)<br>Normalized On Resistance<br>**----- End of picture text -----**<br>


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Fig. 10 - Drain Current<br>0.3<br>0.2<br>0.1<br>0.0<br>0 25 50 75 100 125 150<br>TA Temperature (°C)<br>ID-Drain Current (A)<br>**----- End of picture text -----**<br>


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## **Curve Characteristics** 

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Fig. 12 - Safe Operation Area<br>10<br>1<br>R DS(on)  Limited 100μs<br>0.1 300μs<br>DC 1ms<br>0.01<br>10ms<br>T =150°C<br>J(max)<br>T A =25°C<br>Single Pulse<br>1E-3<br>0.1 1 10 100 1000<br>Drain to Source Voltage (V)<br>Drain Current (A)<br>**----- End of picture text -----**<br>


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Fig. 13 - Normalized Transient Thermal Impedance<br>10<br>D=Ton/T<br>TJRθjA=350,PK=TC+PdmꞏZθ ° C/W jCꞏRθjC In descendinD=0.5, 0.3, 0.1,0.05, 0.02, 0.01, single pulseg order<br>1<br>0.1<br>Single Pulse<br>0.01 PDM<br>TON<br>T<br>1E-3<br>1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000<br>Pulse Width (s)<br>Thermal Resistance<br>Zth(J-A) Normalized Transient<br>**----- End of picture text -----**<br>


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|**Device**|**Packing**|
|---|---|
|Part Number-TP|Tape&Reel:3Kpcs/Reel|



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