SISS30DN-T1-GE3

Power MOSFET, N Channel, 80 V, 54.7 A, 8250 µohm, PowerPAK 1212, Surface Mount

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Manufacturer: VISHAY
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:54.7A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.00685ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage V
MSL: MSL 1 - Unlimited
SVHC: Lead (07-Nov-2024)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: TrenchFET Gen IV
Qualification: -
Power Dissipation: 57W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: PowerPAK 1212
Drain Source Voltage Vds: 80V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 54.7A
Drain Source On State Resistance: 8250µohm
Gate Source Threshold Voltage Max: 3.8V

Delivery and price
Units per pack	1000
Price	0.355 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 27, 2026