SISS02DN-T1-GE3

Power MOSFET, N Channel, 25 V, 80 A, 1200 µohm, PowerPAK 1212, Surface Mount

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Manufacturer: VISHAY
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.001ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2
MSL: MSL 1 - Unlimited
SVHC: Lead (07-Nov-2024)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: TrenchFET Gen IV
Qualification: -
Power Dissipation: 65.7W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: PowerPAK 1212
Drain Source Voltage Vds: 25V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 80A
Drain Source On State Resistance: 1200µohm
Gate Source Threshold Voltage Max: 2.2V

Delivery and price
Units per pack	5000
Price	0.478 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 14, 2026