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SISH536DN-T1-GE3

Power MOSFET, N Channel, 30 V, 67.4 A, 3250 µohm, PowerPAK 1212, Surface Mount

  • Manufacturer: VISHAY
  • Product type: Single MOSFETs
  • MSL: MSL 1 - Unlimited
  • SVHC: Lead (07-Nov-2024)
  • No. of Pins: 8Pins
  • Channel Type: N Channel
  • Product Range: TrenchFET Gen V
  • Qualification: -
  • Power Dissipation: 26.5W
  • Transistor Mounting: Surface Mount
  • Rds(on) Test Voltage: 10V
  • Transistor Case Style: PowerPAK 1212
  • Drain Source Voltage Vds: 30V
  • Operating Temperature Max: 150°C
  • Continuous Drain Current Id: 67.4A
  • Drain Source On State Resistance: 3250µohm
  • Gate Source Threshold Voltage Max: 2.2V
Delivery and price
Units per pack 5000
Price 0.175 €
Current stock 1000+
Lead time 7 days

Updated at March 14, 2026