SISH410DN-T1-GE3

Power MOSFET, N Channel, 20 V, 35 A, 4800 µohm, PowerPAK 1212, Surface Mount

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Manufacturer: VISHAY
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.004ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5
MSL: MSL 1 - Unlimited
SVHC: Lead (07-Nov-2024)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: TrenchFET
Qualification: -
Power Dissipation: 52W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: PowerPAK 1212
Drain Source Voltage Vds: 20V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 35A
Drain Source On State Resistance: 4800µohm
Gate Source Threshold Voltage Max: 2.5V

Delivery and price
Units per pack	5000
Price	0.308 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 27, 2026