SISH101DN-T1-GE3

Power MOSFET, P Channel, 30 V, 35 A, 7200 µohm, PowerPAK 1212, Surface Mount

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Manufacturer: VISHAY
Product type: Single MOSFETs
Transistor Polarity:P Channel; Continuous Drain Current Id:-35A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0058ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage V
MSL: MSL 1 - Unlimited
SVHC: Lead (07-Nov-2024)
No. of Pins: 8Pins
Channel Type: P Channel
Product Range: TrenchFET
Qualification: -
Power Dissipation: 52W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: PowerPAK 1212
Drain Source Voltage Vds: 30V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 35A
Drain Source On State Resistance: 7200µohm
Gate Source Threshold Voltage Max: 2.5V

Delivery and price
Units per pack	1500
Price	0.251 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 15, 2026