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SISF20DN-T1-GE3
Dual MOSFET, N Channel, 60 V, 60 V, 52 A, 52 A, 0.01 ohm
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- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Transistor Polarity:Dual N Channel; Continuous Drain Current Id:52A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs
- MSL: MSL 1 - Unlimited
- SVHC: Lead (04-Feb-2026)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: TrenchFET Gen IV Series
- Qualification: -
- Transistor Case Style: PowerPAK 1212
- Drain Source Voltage Vds: 60V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 52A
- Power Dissipation N Channel: 69.4W
- Power Dissipation P Channel: 69.4W
- Drain Source Voltage Vds N Channel: 60V
- Drain Source Voltage Vds P Channel: 60V
- Continuous Drain Current Id N Channel: 52A
- Continuous Drain Current Id P Channel: 52A
- Drain Source On State Resistance N Channel: 0.01ohm
- Drain Source On State Resistance P Channel: 0.01ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.619 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**SiSF20DN** Vishay Siliconix www.vishay.com ## **Common - Drain Dual N-Channel 60 V (S1-S2) MOSFET** ## **FEATURES** |• TrenchFET®Gen IV power MOSFET<br>• Very low source-to-source on resistance<br>• Integrated common-drain n-channel MOSFETs<br>in a compact and thermally enhanced package<br>• 100 % Rgand UIS tested<br>• Optimizes circuit layout for bi-directional current flow<br>• Material categorization: for definitions of compliance<br>please seewww.vishay.com/doc?99912<br>**APPLICATIONS**<br>• Battery protection switch<br>• Bi-directional switch<br>• Load switch<br>• 24 V systems<br>**PRODUCT SUMMARY**<br>VS1S2 (V)<br>60<br>RS1S2(on)max.()at VGS= 10 V<br>0.0130<br>RS1S2(on)max.()at VGS= 4.5 V<br>0.0185<br>Qgtyp.(nC)<br>10.2g<br>IS1S2 (A)<br>52a<br>Configuration<br>Common - Drain<br>**PowerPAK® 1212-8SCD**<br>1<br>G1<br>2<br>D1<br>3<br>D2<br>4<br>G2<br>S1<br>8<br>S1<br>7<br>S2<br>6<br>S2<br>5<br>S1<br>S2<br>Top View<br>Bottom View<br>3.3 mm<br>1<br>3.3 mm<br>N-Channel 1 MOSFET<br>N-Channel 2 MOSFET<br>G2<br>S2<br>G1<br>S1<br>®<br>ore<br>~~_~~<br>~~=e~~|• TrenchFET®Gen IV power MOSFET<br>• Very low source-to-source on resistance<br>• Integrated common-drain n-channel MOSFETs<br>in a compact and thermally enhanced package<br>• 100 % Rgand UIS tested<br>• Optimizes circuit layout for bi-directional current flow<br>• Material categorization: for definitions of compliance<br>please seewww.vishay.com/doc?99912<br>**APPLICATIONS**<br>• Battery protection switch<br>• Bi-directional switch<br>• Load switch<br>• 24 V systems<br>**PRODUCT SUMMARY**<br>VS1S2 (V)<br>60<br>RS1S2(on)max.()at VGS= 10 V<br>0.0130<br>RS1S2(on)max.()at VGS= 4.5 V<br>0.0185<br>Qgtyp.(nC)<br>10.2g<br>IS1S2 (A)<br>52a<br>Configuration<br>Common - Drain<br>**PowerPAK® 1212-8SCD**<br>1<br>G1<br>2<br>D1<br>3<br>D2<br>4<br>G2<br>S1<br>8<br>S1<br>7<br>S2<br>6<br>S2<br>5<br>S1<br>S2<br>Top View<br>Bottom View<br>3.3 mm<br>1<br>3.3 mm<br>N-Channel 1 MOSFET<br>N-Channel 2 MOSFET<br>G2<br>S2<br>G1<br>S1<br>®<br>ore<br>~~_~~<br>~~=e~~|• TrenchFET®Gen IV power MOSFET<br>• Very low source-to-source on resistance<br>• Integrated common-drain n-channel MOSFETs<br>in a compact and thermally enhanced package<br>• 100 % Rgand UIS tested<br>• Optimizes circuit layout for bi-directional current flow<br>• Material categorization: for definitions of compliance<br>please seewww.vishay.com/doc?99912<br>**APPLICATIONS**<br>• Battery protection switch<br>• Bi-directional switch<br>• Load switch<br>• 24 V systems<br>**PRODUCT SUMMARY**<br>VS1S2 (V)<br>60<br>RS1S2(on)max.()at VGS= 10 V<br>0.0130<br>RS1S2(on)max.()at VGS= 4.5 V<br>0.0185<br>Qgtyp.(nC)<br>10.2g<br>IS1S2 (A)<br>52a<br>Configuration<br>Common - Drain<br>**PowerPAK® 1212-8SCD**<br>1<br>G1<br>2<br>D1<br>3<br>D2<br>4<br>G2<br>S1<br>8<br>S1<br>7<br>S2<br>6<br>S2<br>5<br>S1<br>S2<br>Top View<br>Bottom View<br>3.3 mm<br>1<br>3.3 mm<br>N-Channel 1 MOSFET<br>N-Channel 2 MOSFET<br>G2<br>S2<br>G1<br>S1<br>®<br>ore<br>~~_~~<br>~~=e~~|• TrenchFET®Gen IV power MOSFET<br>• Very low source-to-source on resistance<br>• Integrated common-drain n-channel MOSFETs<br>in a compact and thermally enhanced package<br>• 100 % Rgand UIS tested<br>• Optimizes circuit layout for bi-directional current flow<br>• Material categorization: for definitions of compliance<br>please seewww.vishay.com/doc?99912<br>**APPLICATIONS**<br>• Battery protection switch<br>• Bi-directional switch<br>• Load switch<br>• 24 V systems<br>**PRODUCT SUMMARY**<br>VS1S2 (V)<br>60<br>RS1S2(on)max.()at VGS= 10 V<br>0.0130<br>RS1S2(on)max.()at VGS= 4.5 V<br>0.0185<br>Qgtyp.(nC)<br>10.2g<br>IS1S2 (A)<br>52a<br>Configuration<br>Common - Drain<br>**PowerPAK® 1212-8SCD**<br>1<br>G1<br>2<br>D1<br>3<br>D2<br>4<br>G2<br>S1<br>8<br>S1<br>7<br>S2<br>6<br>S2<br>5<br>S1<br>S2<br>Top View<br>Bottom View<br>3.3 mm<br>1<br>3.3 mm<br>N-Channel 1 MOSFET<br>N-Channel 2 MOSFET<br>G2<br>S2<br>G1<br>S1<br>®<br>ore<br>~~_~~<br>~~=e~~|• TrenchFET®Gen IV power MOSFET<br>• Very low source-to-source on resistance<br>• Integrated common-drain n-channel MOSFETs<br>in a compact and thermally enhanced package<br>• 100 % Rgand UIS tested<br>• Optimizes circuit layout for bi-directional current flow<br>• Material categorization: for definitions of compliance<br>please seewww.vishay.com/doc?99912<br>**APPLICATIONS**<br>• Battery protection switch<br>• Bi-directional switch<br>• Load switch<br>• 24 V systems<br>**PRODUCT SUMMARY**<br>VS1S2 (V)<br>60<br>RS1S2(on)max.()at VGS= 10 V<br>0.0130<br>RS1S2(on)max.()at VGS= 4.5 V<br>0.0185<br>Qgtyp.(nC)<br>10.2g<br>IS1S2 (A)<br>52a<br>Configuration<br>Common - Drain<br>**PowerPAK® 1212-8SCD**<br>1<br>G1<br>2<br>D1<br>3<br>D2<br>4<br>G2<br>S1<br>8<br>S1<br>7<br>S2<br>6<br>S2<br>5<br>S1<br>S2<br>Top View<br>Bottom View<br>3.3 mm<br>1<br>3.3 mm<br>N-Channel 1 MOSFET<br>N-Channel 2 MOSFET<br>G2<br>S2<br>G1<br>S1<br>®<br>ore<br>~~_~~<br>~~=e~~|• TrenchFET®Gen IV power MOSFET<br>• Very low source-to-source on resistance<br>• Integrated common-drain n-channel MOSFETs<br>in a compact and thermally enhanced package<br>• 100 % Rgand UIS tested<br>• Optimizes circuit layout for bi-directional current flow<br>• Material categorization: for definitions of compliance<br>please seewww.vishay.com/doc?99912<br>**APPLICATIONS**<br>• Battery protection switch<br>• Bi-directional switch<br>• Load switch<br>• 24 V systems<br>**PRODUCT SUMMARY**<br>VS1S2 (V)<br>60<br>RS1S2(on)max.()at VGS= 10 V<br>0.0130<br>RS1S2(on)max.()at VGS= 4.5 V<br>0.0185<br>Qgtyp.(nC)<br>10.2g<br>IS1S2 (A)<br>52a<br>Configuration<br>Common - Drain<br>**PowerPAK® 1212-8SCD**<br>1<br>G1<br>2<br>D1<br>3<br>D2<br>4<br>G2<br>S1<br>8<br>S1<br>7<br>S2<br>6<br>S2<br>5<br>S1<br>S2<br>Top View<br>Bottom View<br>3.3 mm<br>1<br>3.3 mm<br>N-Channel 1 MOSFET<br>N-Channel 2 MOSFET<br>G2<br>S2<br>G1<br>S1<br>®<br>ore<br>~~_~~<br>~~=e~~|• TrenchFET®Gen IV power MOSFET<br>• Very low source-to-source on resistance<br>• Integrated common-drain n-channel MOSFETs<br>in a compact and thermally enhanced package<br>• 100 % Rgand UIS tested<br>• Optimizes circuit layout for bi-directional current flow<br>• Material categorization: for definitions of compliance<br>please seewww.vishay.com/doc?99912<br>**APPLICATIONS**<br>• Battery protection switch<br>• Bi-directional switch<br>• Load switch<br>• 24 V systems<br>**PRODUCT SUMMARY**<br>VS1S2 (V)<br>60<br>RS1S2(on)max.()at VGS= 10 V<br>0.0130<br>RS1S2(on)max.()at VGS= 4.5 V<br>0.0185<br>Qgtyp.(nC)<br>10.2g<br>IS1S2 (A)<br>52a<br>Configuration<br>Common - Drain<br>**PowerPAK® 1212-8SCD**<br>1<br>G1<br>2<br>D1<br>3<br>D2<br>4<br>G2<br>S1<br>8<br>S1<br>7<br>S2<br>6<br>S2<br>5<br>S1<br>S2<br>Top View<br>Bottom View<br>3.3 mm<br>1<br>3.3 mm<br>N-Channel 1 MOSFET<br>N-Channel 2 MOSFET<br>G2<br>S2<br>G1<br>S1<br>®<br>ore<br>~~_~~<br>~~=e~~|• TrenchFET®Gen IV power MOSFET<br>• Very low source-to-source on resistance<br>• Integrated common-drain n-channel MOSFETs<br>in a compact and thermally enhanced package<br>• 100 % Rgand UIS tested<br>• Optimizes circuit layout for bi-directional current flow<br>• Material categorization: for definitions of compliance<br>please seewww.vishay.com/doc?99912<br>**APPLICATIONS**<br>• Battery protection switch<br>• Bi-directional switch<br>• Load switch<br>• 24 V systems<br>**PRODUCT SUMMARY**<br>VS1S2 (V)<br>60<br>RS1S2(on)max.()at VGS= 10 V<br>0.0130<br>RS1S2(on)max.()at VGS= 4.5 V<br>0.0185<br>Qgtyp.(nC)<br>10.2g<br>IS1S2 (A)<br>52a<br>Configuration<br>Common - Drain<br>**PowerPAK® 1212-8SCD**<br>1<br>G1<br>2<br>D1<br>3<br>D2<br>4<br>G2<br>S1<br>8<br>S1<br>7<br>S2<br>6<br>S2<br>5<br>S1<br>S2<br>Top View<br>Bottom View<br>3.3 mm<br>1<br>3.3 mm<br>N-Channel 1 MOSFET<br>N-Channel 2 MOSFET<br>G2<br>S2<br>G1<br>S1<br>®<br>ore<br>~~_~~<br>~~=e~~| |---|---|---|---|---|---|---|---| |**ORDERING INFORMATION**<br>Package<br>Lead(Pb)-free and halogen-free<br>**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C<br>~~_————~~||PowerPAK 1212-8SCD<br>SiSF20DN-T1-GE3<br>= 25 °C,unless otherwise noted)|||||| |**PARAMETER**|||**SYMBOL**<br>**LIMIT**|||**UNIT**|| |Drain-source voltage<br>Gate-source voltage|||VS1S2<br>60<br>VGS<br>± 20||||V| |TC= 25 °C|= 25 °C|= 25 °C|52||||| |Continuous drain current (TJ= 150 °C)<br>TC= 70 °C<br>TA= 25 °C|= 70 °C<br>= 25 °C|= 70 °C<br>= 25 °C|IS1S2<br>41<br>14b, c||||A| |TA= 70 °C|= 70 °C|= 70 °C|11b, c||||| |Pulsed drain current(t = 100μs)|||IS1S2M<br>100||||| |TC= 25 °C|= 25 °C|= 25 °C|69.4||||| |Maximum power dissipation<br>TC= 70 °C<br>TA= 25 °C|= 70 °C<br>= 25 °C|= 70 °C<br>= 25 °C|PS1S2<br>44.4<br>5.2b, c|||W|| |TA= 70 °C|= 70 °C|= 70 °C|3.3b, c||||| |Operating junction and storage temperature range<br>Solderingrecommendations(peak temperature) c|||TJ,Tstg<br>-55 to +150<br>260|||°C|| - Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 |**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**|**THERMAL RESISTANCE RATINGS**| |---|---|---|---|---|---| |**PARAMETER**||**SYMBOL**|**TYPICAL**|**MAXIMUM**|**UNIT**| |Maximumjunction-to-ambientb|t10 s|RthJA|19|24|°C/W| |Maximumjunction-to-case(drain)|Steadystate|RthJC|1.4|1.8|| ## **Notes** a. TC = 25 °C - b. Surface mounted on 1" x 1" FR4 board c. t = 10 s - d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8SCD is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection - e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components - f. Maximum under steady state conditions is 63 °C/W - g. Single MOSFET S18-1210-Rev. A, 10-Dec-2018 Document Number: 76915 **1** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SiSF20DN** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com |**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)||||| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**| |**Static**||||||| |Drain-source breakdown voltage|VDS|VGS= 0 V, ID= 250 μA|60|-|-|V| |Gate-source threshold voltage|VGS(th)|VS1S2= VGS, ID= 250 μA|1|-|3|| |Gate-source leakage|IGSS|VS1S2= 0 V, VGS= ± 20 V|-|-|± 100|nA| |Zero gate voltage drain current|IDSS|VS1S2= 60 V, VGS= 0 V|-|-|1|μA| |||VS1S2= 60 V, VGS= 0 V, TJ= 70 °C|-|-|15|| |On-state drain currenta|IS1S2(on)|VS1S2 10 V, VGS= 10 V|20|-|-|A| |Drain-source on-state resistancea|RS1S2(on)|VGS= 10 V, IS1S2= 7 A|-|0.0100|0.0130|| |||VGS= 4.5 V, IS1S2= 5 A|-|0.0140|0.0185|| |Forward transconductancea|gfs|VS1S2= 10 V, IS1S2= 25 A|-|75|-|S| |**Dynamicb, c**||||||| |Input capacitance|Ciss|VDS= 30 V, VGS= 0 V, f = 1 MHz|-|1290|-|pF| |Output capacitance|Coss||-|340|-|| |Reverse transfer capacitance|Crss||-|8|-|| |Total gate charge|Qg|VDS= 30 V, VGS= 10 V, ID=5 A|-|22|33|nC| |||VDS= 30 V, VGS= 4.5 V, ID= 5 A|-|10.2|16|| |Gate-source charge|Qgs||-|3.9|-|| |Gate-drain charge|Qgd||-|2.9|-|| |Gate resistance|Rg|f = 1 MHz|0.14|0.7|1.4|| |Turn-on delay time|td(on)|VDD= 30 V, RL= 6, IS1S2 5 A,<br>VGEN= 10 V, Rg= 1|-|10|20|ns| |Rise time|tr||-|5|10|| |Turn-off delay time|td(off)||-|19|40|| |Fall time|tf||-|5|10|| |Turn-on delay time|td(on)|VDD= 30 V, RL= 6, ID 5 A,<br>VGEN= 4.5 V, Rg= 1|-|15|30|| |Rise time|tr||-|50|100|| |Turn-off delay time|td(off)||-|24|50|| |Fall time|tf||-|7|15|| |**Drain-Source Body Diode Characteristicsc**||||||| |Continuous source-drain diode current|IS1S2|TC= 25 °C|-|-|52|A| |Pulse diode forward current|IS1S2M||-|-|100|| |Body diode reverse recovery time|trr|IF= 5 A, di/dt = 100 A/μs,<br>TJ= 25 °C|-|30|60|ns| |Body diode reverse recovery charge|Qrr||-|18|35|nC| |Reverse recovery fall time|ta||-|15|-|ns| |Reverse recovery rise time|tb||-|15|-|| ## **Notes** a. Pulse test; pulse width 300 μs, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. On single MOSFET _Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ S18-1210-Rev. A, 10-Dec-2018 Document Number: 76915 **2** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SiSF20DN** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> www.vishay.com<br>**----- End of picture text -----**<br> ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [238 x 384] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>100 10000<br>VGS = 10 V thru 5 V<br>VGS = 4 V<br>80<br>1000<br>60<br>40<br>100<br>20 V GS = 3 V<br>0 10<br>0 0.5 1.0 1.5 2.0 2.5 3.0<br>VS1S2 - Source-to-Source Voltage (V)<br>Output Characteristics<br>Axis Title<br>0.025 10000<br>0.020<br>VGS = 4.5 V 1000<br>0.015<br>0.010<br>100<br>VGS = 10 V<br>0.005<br>0 10<br>0 20 40 60 80 100<br>IS1S2 - Source Current (A)<br>1st line 2nd line<br>2nd line<br> - Source Current (A)<br>IS1S2<br>1st line 2nd line<br>2nd line<br> - On-Resistance (Ω)<br>S1S2(on)<br>R<br>**----- End of picture text -----**<br> **On-Resistance vs. Source Current and Gate Voltage** **==> picture [238 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> Note: for one channel only<br>10 10000<br>ID = 5 A<br>8<br>VDS = 30 V<br>1000<br>6<br>4 VDS = 15 V VDS = 24 V<br>100<br>2<br>0 10<br>0 5 10 15 20 25<br>Qg - Total Gate Charge (nC)<br>2nd line 1st line 2nd line<br> - Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br> **Gate Charge** **==> picture [238 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>100 10000<br>80<br>1000<br>60<br>40<br>TC = 25 °C 100<br>20<br>TC = 125 °C TC = -55 °C<br>0 10<br>0 1 2 3 4 5<br>VGS - Gate-to-Source Voltage (V)<br>2nd line 1st line 2nd line<br>- Source Current (A)<br>IS1S2<br>**----- End of picture text -----**<br> ## **Transfer Characteristics** **==> picture [238 x 382] intentionally omitted <==** **----- Start of picture text -----**<br> Note: for one channel only<br>1600 10000<br>Ciss<br>1200<br>1000<br>800<br>100<br>400 C oss<br>Crss<br>0 10<br>0 10 20 30 40 50 60<br>VDS - Drain-to-Source Voltage (V)<br>Capacitance<br>Axis Title<br>2.0 10000<br>ID = 7 A<br>1.8<br>VGS = 10 V<br>1.6<br>1000<br>1.4<br>VGS = 4.5 V<br>1.2<br>100<br>1.0<br>0.8<br>0.6 10<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Junction Temperature (°C)<br>2nd line 1st line 2nd line<br>C - Capacitance (pF)<br>1st line 2nd line<br>2nd line<br> - On-Resistance (Normalized)<br>S1S2(on)<br>R<br>**----- End of picture text -----**<br> **On-Resistance vs. Junction Temperature** Document Number: 76915 S18-1210-Rev. A, 10-Dec-2018 **3** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SiSF20DN** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [238 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>100 10000<br>10 TJ = 150 ° C<br>1000<br>1 TJ = 25 °C<br>100<br>0.1<br>0.01 10<br>0 0.2 0.4 0.6 0.8 1.0 1.2<br>VFS1S2 - Source-to-Source Voltage (V)<br>1st line 2nd line<br>2nd line<br> - Source Current (A)<br>IFS1S2<br>**----- End of picture text -----**<br> **Source-Drain Diode Forward Voltage** **==> picture [238 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>1.8 10000<br>1.6<br>1000<br>1.4 I D = 250 μA<br>1.2<br>100<br>1.0<br>0.8 10<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Junction Temperature (°C)<br>2nd line - (V)<br>GS(th) 1st line 2nd line<br>V<br>**----- End of picture text -----**<br> **Threshold Voltage** **==> picture [238 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>0.08 10000<br>0.06<br>1000<br>0.04<br>TJ = 125 °C 100<br>0.02<br>TJ = 25 °C<br>0 10<br>0 2 4 6 8 10<br>VGS - Gate-to-Source Voltage (V)<br>2nd line 1st line 2nd line<br>- On-Resistance (Ω)<br>S1S2(on)<br>R<br>**----- End of picture text -----**<br> **On-Resistance vs. Gate-to-Source Voltage** **==> picture [238 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>80 10000<br>60<br>1000<br>40<br>100<br>20<br>0 10<br>0.001 0.01 0.1 1 10 100 1000<br>t - Time (s)<br>2nd line 1st line 2nd line<br>P - Power (W)<br>**----- End of picture text -----**<br> **Single Pulse Power, Junction-to-Ambient** S18-1210-Rev. A, 10-Dec-2018 Document Number: 76915 **4** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SiSF20DN** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [240 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>1000 10000<br>Limited by R S1S2(on) a IS1S2M limited<br>100<br>IS1S2(ON) limited<br>1000<br>10 10 0 μs<br>1 m s<br>1 10 ms<br>10 0 ms100<br>T A = 25 °C, 1 s<br>0.1 single pulse<br>10 s<br>DC<br>BV S1S2 limited<br>0.01 10<br>0.1 1 10 100<br>VS1S2 - Source-to-Source Voltage (V)<br>1st line 2nd line<br>2nd line<br> - Source Current (A)<br>IS1S2<br>**----- End of picture text -----**<br> **Safe Operating Area, Junction-to-Ambient** **==> picture [505 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title Axis Title<br>60 10000 100 10000<br>50<br>80<br>40 1000 1000<br>60<br>30<br>40<br>20 100 100<br>20<br>10<br>0 10 0 10<br>0 25 50 75 100 125 150 0 25 50 75 100 125 150<br>TC - Case Temperature (°C) TC - Case Temperature (°C)<br>Current Derating [b] Power, Junction-to-Case<br>1st line 2nd line 2nd line 1st line 2nd line<br>2nd line<br>P - Power (W)<br> - Source Current (A)<br> S1S2<br>R<br>**----- End of picture text -----**<br> ## **Notes** a. VGS > minimum VGS at which RDS(on) is specified b. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S18-1210-Rev. A, 10-Dec-2018 Document Number: 76915 **5** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SiSF20DN** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** **==> picture [77 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> www.vishay.com<br>**----- End of picture text -----**<br> ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [504 x 382] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title<br>1 10000<br>Duty cycle = 0.5<br>0.2 Notes<br>1000<br>0.1 PDM<br>0.1<br>0.05 t 1<br>t 2<br>t 1 100<br>0.02 1. Duty cycle, D = t2<br>2. Per unit base = R thJA = 63 °C/W<br>3. T JM - T A = P DM Z thJA (t)<br>4. Surface mounted<br>Single pulse<br>0.01 10<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br>Axis Title<br>1 10000<br>Duty cycle = 0.5<br>1000<br>0.2<br>0.1<br>100<br>0.05<br>0.02<br>Single pulse<br>0.1 10<br>0.0001 0.001 0.01 0.1 1<br>Square Wave Pulse Duration (s)<br>1st line 2nd line<br>Thermal Impedance<br>Normalized Effective Transient<br>1st line 2nd line<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br> **Normalized Thermal Transient Impedance, Junction-to-Case** _Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76915._ S18-1210-Rev. A, 10-Dec-2018 Document Number: 76915 **6** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Package Information** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **PowerPAK[®] 1212-8S CD with Flip Chip** **==> picture [476 x 200] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>D A<br>A<br>Pin 1 dot B<br>A1<br>8 1<br>c<br>7 2<br>6 3<br>5 4<br>2 x<br>0.1 C<br>2 x H<br>0.1 C<br>D1 K L<br>D<br>Backside view<br>H<br>B<br>A<br>(8) C C<br>E1<br>M M<br>E E K1 e N x b 0.1 0.05<br>E1<br>b<br>C C H<br>0.1 0.05<br>**----- End of picture text -----**<br> |**DIM.**|**MILLIMETERS**|**MILLIMETERS**|**MILLIMETERS**|**INCHES**|**INCHES**|**INCHES**| |---|---|---|---|---|---|---| ||**MIN.**|**NOM.**|**MAX.**|**MIN.**|**NOM.**|**MAX.**| |A|0.70|0.75|0.80|0.027|0.029|0.031| |A1|0|0.02|0.05|0|0.001|0.002| |b|0.27|0.32|0.37|0.011|0.013|0.015| |c|-|0.20 ref.|-|-|0.008 ref.|-| |D|3.20|3.30|3.40|0.126|0.130|0.134| |D1|1.76|1.86|1.96|0.069|0.073|0.077| |E|3.20|3.30|3.40|0.126|0.130|0.134| |E1|1.18|1.28|1.38|0.046|0.050|0.054| |e|0.60|0.65|0.70|0.024|0.026|0.028| |K|0.50 typ.|||0.020 typ.||| |K1|0.35 typ.|||0.014 typ.||| |H|0.10|0.20|0.30|0.006|0.008|0.010| |L|0.84|0.94|1.04|0.033|0.037|0.041| |ECN: C17-1732-Rev. A, 18-Dec-17<br>DWG: 6061||||||| Revision: 18-Dec-17 Document Number: 76263 **1** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **PAD Pattern** Vishay Siliconix www.vishay.com ## **Recommended Land Pattern PowerPAK[®] 1212-8S CD** **==> picture [216 x 162] intentionally omitted <==** **----- Start of picture text -----**<br> 1 8<br>2 7<br>3 6<br>4 5<br>**----- End of picture text -----**<br> **==> picture [422 x 281] intentionally omitted <==** **----- Start of picture text -----**<br> 3.90<br>3.30<br>0.40 0.30<br>1.29 1.46<br>0.45<br>0.30<br>1 8<br>2 7<br>3 6<br>4 5<br>0.48 0.47<br>0.40 0.42<br>0.65 0.65<br>2.35 2.37 3.30<br>0.32<br>0.20<br>**----- End of picture text -----**<br> Revision: 05-Jan-2021 Document Number: 63021 **1** For technical questions, contact: powerictechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **PAD Pattern** Vishay Siliconix www.vishay.com **==> picture [59 x 48] intentionally omitted <==** ## **Recommended Minimum PADs for PowerPAIR[®] 6 x 5F** **==> picture [436 x 336] intentionally omitted <==** **----- Start of picture text -----**<br> 7<br>0.98 0.4 1.05 0.4 1.69 0.5 1.98<br>0.5 0.5<br>1 8<br>2 7<br>3 6<br>4 5<br>0.5<br>2.81 0.4 0.97<br>0.595 0.27 0.595<br>0.4<br>1.27<br>5<br>0.6464 4.46 0.6464<br>1.27 x 3 =3 .81<br>1.27 x 2 =2.54<br>0.595 0.27 0.595<br>**----- End of picture text -----**<br> Component for PowerPair 6 x 5F Land Pattern for PowerPair 6 x 5F ## **Note** - Dimensions in millimeters Revision: 12-Feb-18 Document Number: 76480 **1** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Legal Disclaimer Notice** Vishay www.vishay.com ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. _**© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ Revision: 01-Jan-2021 Document Number: 91000 **1**
Updated at June 9, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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