SISF20DN-T1-GE3

Dual MOSFET, N Channel, 60 V, 60 V, 52 A, 52 A, 0.01 ohm

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Manufacturer: VISHAY
Product type: Dual MOSFETs
Transistor Polarity:Dual N Channel; Continuous Drain Current Id:52A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs
MSL: MSL 1 - Unlimited
SVHC: Lead (07-Nov-2024)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: TrenchFET Gen IV Series
Qualification: -
Transistor Case Style: PowerPAK 1212
Drain Source Voltage Vds: 60V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 52A
Power Dissipation N Channel: 69.4W
Power Dissipation P Channel: 69.4W
Drain Source Voltage Vds N Channel: 60V
Drain Source Voltage Vds P Channel: 60V
Continuous Drain Current Id N Channel: 52A
Continuous Drain Current Id P Channel: 52A
Drain Source On State Resistance N Channel: 0.01ohm
Drain Source On State Resistance P Channel: 0.01ohm

Delivery and price
Units per pack	5000
Price	0.54 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 23, 2026