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SIS9122DN-T1-GE3
Dual MOSFET, Dual N Channel, 100 V, 7.1 A, 0.16 ohm
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type:
- SVHC: No SVHC (21-Jan-2025)
- No. of Pins: 8Pins
- Channel Type: Dual N Channel
- Product Range: TrenchFET Gen IV Series
- Qualification: -
- Transistor Case Style: PowerPAK 1212
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 17.8W
- Power Dissipation P Channel: -
- Drain Source Voltage Vds N Channel: 100V
- Drain Source Voltage Vds P Channel: -
- Continuous Drain Current Id N Channel: 7.1A
- Continuous Drain Current Id P Channel: -
- Drain Source On State Resistance N Channel: 0.16ohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.336 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
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Updated at March 30, 2026