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SIS903DN-T1-GE3
Dual MOSFET, P Channel, 20 V, 20 V, 6 A, 6 A, 0.0167 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0167ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Volta
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (07-Nov-2024)
- No. of Pins: 8Pins
- Channel Type: P Channel
- Product Range: TrenchFET Gen III Series
- Qualification: -
- Transistor Case Style: PowerPAK 1212
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 23W
- Power Dissipation P Channel: 23W
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 6A
- Continuous Drain Current Id P Channel: 6A
- Drain Source On State Resistance N Channel: 0.0167ohm
- Drain Source On State Resistance P Channel: 0.0167ohm
| Delivery and price | |
|---|---|
| Units per pack | 6000 |
| Price | 0.547 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
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Updated at April 25, 2026