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SIS590DN-T1-GE3
Dual MOSFET, N and P Channel, 100 V, 100 V, 4 A, 4 A, 0.197 ohm
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- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N and P Channel
- Product Range: TrenchFET Series
- Qualification: -
- Transistor Case Style: PowerPAK 1212
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 23.1W
- Power Dissipation P Channel: 23.1W
- Drain Source Voltage Vds N Channel: 100V
- Drain Source Voltage Vds P Channel: 100V
- Continuous Drain Current Id N Channel: 4A
- Continuous Drain Current Id P Channel: 4A
- Drain Source On State Resistance N Channel: 0.197ohm
- Drain Source On State Resistance P Channel: 0.197ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.308 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**SiS590DN** Vishay Siliconix www.vishay.com ## **N- and P-Channel 100 V (D-S) MOSFET** **PowerPAK[®] 1212-8 Dual** D1 D1 8 D2 7 D2 6 5 **1** 1 **4 S32 G21 S1 G** 2 Top View Bottom View **PRODUCT SUMMARY N-CHANNEL P-CHANNEL** VDS (V) 100 -100 RDS(on) ( ) at VGS = ± 10 V 0.167 0.251 RDS(on) ( ) at VGS = ± 4.5 V 0.186 0.338 Qg typ. (nC) 2.4 4.0 ID (A)[a, b] 4 Configuration N- and p-pair ~~an~~ **ORDERING INFORMATION** ## **FEATURES** - TrenchFET[®] power MOSFETs - Thermally enhanced PowerPAK[®] - 100 % Rg tested - Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ## **APPLICATIONS** - DC/DC converters • Active clamp D1 S2 • Brushless DC motors • AC/DC inverter G2 G1 • Motor drive switch S1 D2 N-Channel MOSFET P-Channel MOSFET ~~. *~~ Package PowerPAK 1212-8 Lead (Pb)-free and halogen-free SIS590DN-T1-GE3 |**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)<br>~~eee~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)<br>~~eee~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)<br>~~eee~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)<br>~~eee~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)<br>~~eee~~|**ABSOLUTE MAXIMUM RATINGS**(TA= 25 °C, unless otherwise noted)<br>~~eee~~| |---|---|---|---|---|---| |**PARAMETER**<br>~~Pe~~<br>~~[ttt~~|~~Pe~~<br>~~ttt~~|**SYMBOL**<br>~~Pe~~<br>~~ttt~~|**N-CHANNEL**<br>~~Pe~~<br>~~ttt~~|**P-CHANNEL**<br>~~Pe~~<br>~~ttt~~<br>~~er~~|**UNIT**<br>~~Pe~~<br>~~er~~| |Drain-source voltage<br>~~[ttt~~||VDS<br>~~ttt~~|100<br>~~ttt~~|-100<br>~~ttt~~<br>~~er~~|V<br>~~er~~<br>~~es~~| |Gate-source voltage<br>~~[ttt~~<br>~~[|~~||VGS<br>~~ttt~~|± 20<br>~~ttt~~<br>~~er~~<br>~~es~~||| |Continuous drain current<br>~~[ttt~~<br>~~[|~~<br>~~|~~<br>~~|~~<br>~~BE~~|TC= 25 °C<br>~~ttt~~<br>~~[|~~<br>~~|~~|ID<br>~~ttt~~<br>~~GO~~<br>|4g<br>~~ttt~~<br>~~es~~|4g<br>~~ttt~~<br>~~er~~<br>~~es~~|A<br>~~er~~<br>~~es~~<br>~~ee~~| ||TC= 70 °C<br>~~[|~~<br>~~|~~||4g<br>~~es~~|4g<br>~~es~~|| ||TA= 25 °C<br>~~|~~<br>~~|~~||2.7a, b|2.3a, b|| ||TA= 70 °C<br>~~|~~<br>~~BE~~||2.1<br>~~ee~~<br>~~GO~~|1.8<br>~~ee~~<br>~~GO~~|| |Pulsed drain current(t = 100s)<br>~~|~~<br>~~nD~~<br>~~BE~~||IDM<br>~~nD~~<br>~~GO~~<br>|8<br>~~ee~~<br>~~nD~~<br>~~GO~~|10<br>~~ee~~<br>~~nD~~<br>~~GO~~|~~ee~~<br>~~nD~~| |Continuous source-drain diode current<br>~~BE~~<br>~~|~~|TC= 25 °C<br>~~BESR~~<br>~~|~~|IS<br>~~GO~~<br>~~SR~~|14.9<br>~~GO~~<br>~~yh}~~|19.3<br>~~GO~~<br>~~yh}~~|~~yh}~~| ||TC= 70 °C<br>~~BESR~~<br>~~|~~||9.5<br>~~GO~~<br>~~yh}~~|12.3<br>~~GO~~<br>~~yh}~~|~~yh}~~| |Singlepulse avalanche current<br>~~BE~~<br>~~|~~|L = 0.1 mH<br>~~BE SR~~<br>~~|~~<br>~~|~~<br>~~SS~~|IAS<br>~~GO~~<br>~~SR~~|4<br>~~GO~~<br>~~yh}~~|10<br>~~GO~~<br>~~yh}~~|W<br>~~yh}~~| |Singlepulse avalanche energy<br>~~|~~||EAS<br>~~a~~<br>~~SS~~|0.8<br>~~a~~|5.0|| |Maximum Power Dissipation<br>~~|~~<br>~~**|**~~<br>~~a~~|TC= 25 °C<br>~~|~~<br>~~**|**~~<br>~~SS~~|PD<br>~~a~~<br>~~**a**~~<br>~~SS~~|17.9<br>~~a~~<br>~~**a**~~|23.1|| ||TC= 70 °C<br>~~|~~<br>~~**|**~~<br>~~SS~~||11.4<br>~~a~~<br>~~**a**~~|14.8|| ||TA= 25 °C<br>~~**|**~~<br>~~SS~~||2.5a, b<br>~~**a**~~|2.6a, b|| ||TA= 70 °C<br>~~**|**~~<br>~~SS~~||1.6<br>~~**a**~~|1.7|| |Operating junction and storage temperature range<br>~~SS~~<br>~~Sh~~<br>~~nD~~||TJ,Tstg<br>~~SS~~<br>~~Sh~~<br>~~GO~~|-55 to +150<br>~~GO~~||°C<br>~~GO~~| |Solderingrecommendations(peak temperature) d, e<br>~~nD~~||stg<br>~~GO~~|260<br>~~GO~~||| ## **Notes** a. Based on silicon capability only - b. Surface mounted on 1" x 1" FR4 board c. t = 10 s - d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection - e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 94 °C/W - g. Package limited S23-0133-Rev. B, 13-Mar-2023 Document Number: 63046 **1** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SiS590DN** www.vishay.com Vishay Siliconix |**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|||||| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX**|**UNIT**| |**Static**|||||||| |Drain-source breakdown voltage|VDS|VGS= 0 V, ID= 250 μA|N-Ch|100|-|-|V| |||VGS= 0 V, ID= -250 μA|P-Ch|-100|-|-|| |VDStemperature coefficient|VDS/TJ|ID= 250 μA|N-Ch|-|79|-|mV/°C| |||ID= -250 μA|P-Ch|-|-68|-|| |VGS(th)temperature coefficient|VGS(th)/TJ|ID= 250 μA|N-Ch|-|-4.4|-|| |||ID= -250 μA|P-Ch|-|4.3|-|| |Gate threshold voltage|VGS(th)|VDS= VGS, ID= 250 μA|N-Ch|1.5|-|2.5|V| |||VDS= VGS, ID= -250 μA|P-Ch|-1.5|-|-2.5|| |Gate-body leakage|IGSS|VDS= 0 V, VGS= ± 20 V|N-Ch|-|-|± 100|nA| ||||P-Ch|-|-|± 100|| |Zero gate voltage drain current|IDSS|VDS= 100 V, VGS= 0 V|N-Ch|-|-|1|μA| |||VDS= -100 V, VGS= 0 V|P-Ch|-|-|-1|| |||VDS= 100 V, VGS= 0 V, TJ= 55 °C|N-Ch|-|-|10|| |||VDS= -100 V, VGS= 0 V, TJ= 55 °C|P-Ch|-|-|-10|| |On-state drain currentb|ID(on)|VDS5 V, VGS= 10 V|N-Ch|4|-|-|A| |||VDS-5 V, VGS= -10 V|P-Ch|-4|-|-|| |Drain-source on-state resistanceb|RDS(on)|VGS= 10 V, ID= 1.5 A|N-Ch|-|0.139|0.167|| |||VGS= -10 V, ID= -2.3 A|P-Ch|-|0.197|0.251|| |||VGS= 4.5 V, ID= 1.0 A|N-Ch|-|0.155|0.186|| |||VGS= -4.5 V, ID= -2.0 A|P-Ch|-|0.260|0.338|| |Forward transconductanceb|gfs|VDS= 10 V, ID= 2.7 A|N-Ch|-|10|-|S| |||VDS= -10 V, ID= 2.3 A|P-Ch|-|24|-|| |**Dynamica**|||||||| |Input capacitance|Ciss|N-channel<br>VDS= 50 V, VGS= 0 V, f = 1 MHz<br>P-channel<br>VDS= -50 V, VGS= 0 V, f = 1 MHz|N-Ch|-|265|-|pF| ||||P-Ch|-|325|-|| |Output capacitance|Coss||N-Ch|-|20|-|| ||||P-Ch|-|90|-|| |Reverse transfer capacitance|Crss||N-Ch|-|2|-|| ||||P-Ch|-|5|-|| |Total gate charge|Qg|VDS= 50 V, VGS= 10 V, ID= 0.2 A|N-Ch|-|5.2|104|nC| |||VDS= -50 V, VGS= -10 V, ID= -9 A|P-Ch|-|11.2|22.4|| |||N-channel<br>VDS= 50 V, VGS= 4.5 V, ID= 0.2 A<br>P-channel<br>VDS= -50 V, VGS= -4.5 V, ID= 2.3 A|N-Ch|-|2.4|4.8|| ||||P-Ch|-|5.7|11.4|| |Gate-source charge|Qgs||N-Ch|-|1.0|-|| ||||P-Ch|-|2.4|-|| |Gate-drain charge|Qgd||N-Ch|-|0.5|-|| ||||P-Ch|-|2.5|-|| |Gate resistance|Rg|f = 1 MHz|N-Ch|0.24|1.2|2.4|| ||||P-Ch|0.76|3.8|7.6|| S23-0133-Rev. B, 13-Mar-2023 Document Number: 63046 **2** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SiS590DN** Vishay Siliconix www.vishay.com |**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|||||| |---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**||**MIN.**|**TYP.**|**MAX**|**UNIT**| |**Dynamica**|||||||| |Turn-on delay time|td(on)|N-channel<br>VDD= 10 V, RL= 2<br>ID 2.1 A, VGEN= 10 V, Rg= 1<br>P-channel<br>VDD= -10 V, RL= 2<br>ID -1.8 A, VGEN= -10 V, Rg= 1|N-Ch|-|12|25|ns| ||||P-Ch|-|15|30|| |Rise time|tr||N-Ch|-|45|90|| ||||P-Ch|-|50|100|| |Turn-off delay time|td(off)||N-Ch|-|22|45|| ||||P-Ch|-|30|60|| |Fall time|tf||N-Ch|-|12|25|| ||||P-Ch|-|11|20|| |Turn-on delay time|td(on)|N-channel<br>VDD= 10 V, RL= 2<br>ID 2.1 A, VGEN= 4.5 V, Rg= 1<br>P-channel<br>VDD= -10 V, RL= 2<br>ID -1.8 A, VGEN= -4.5 V, Rg= 1|N-Ch|-|6|15|| ||||P-Ch|-|10|15|| |Rise time|tr||N-Ch|-|21|40|| ||||P-Ch|-|23|45|| |Turn-off delay time|td(off)||N-Ch|-|20|40|| ||||P-Ch|-|26|50|| |Fall time|tf||N-Ch|-|10|20|| ||||P-Ch|-|10|20|| |**Drain-Source Body Diode Characteristics**|||||||| |Continuous source-drain diode current|IS|TA= 25 °C|N-Ch|-|-|2.1|A| ||||P-Ch|-|-|-2.2|| |Pulse diode forward current (t = 100 μs)|ISM||N-Ch|-|-|8|| ||||P-Ch|-|-|-10|| |Body diode voltage|VSD|IS= 2.1 A, VGS= 0 V|N-Ch|-|0.8|1.2|V| |||IS= -1.8 A, VGS= 0 V|P-Ch|-|-0.81|-1.2|| |Body diode reverse recovery time|trr|N-channel<br>IF= -1.8 A, dI//dt = 100 A/μs, TJ= 25 °C<br>P-channel<br>IF= -1.8 A, dI/dt = -100 A/μs, TJ= 25 °C|N-Ch|-|23|46|ns| ||||P-Ch|-|37|74|| |Body diode reverse recovery charge|Qrr||N-Ch|-|21|42|nC| ||||P-Ch|-|65|130|| |Reverse recovery fall time|ta||N-Ch|-|21|-|ns| ||||P-Ch|-|34|-|| |Reverse recovery rise time|tb||N-Ch|-|2|-|| ||||P-Ch|-|3|-|| ## **Notes** a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 μs, duty cycle 2 %. _Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ S23-0133-Rev. B, 13-Mar-2023 Document Number: 63046 **3** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SiS590DN** Vishay Siliconix www.vishay.com ## **N-CHANNEL TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [475 x 399] intentionally omitted <==** **----- Start of picture text -----**<br> Axis Title Axis Title<br>8 10000 8 10000<br>VGS = 10 V thru 4 V<br>6 6<br>1000 1000<br>4 4<br>TC = 125 °C<br>VGS = 3 V 100 100<br>2 2<br>TC = 25 °C<br>0 10 0 TC = -55 °C 10<br>0 1 2 3 4 0 1 2 3 4<br>VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)<br>Output Characteristics Transfer Characteristics<br>Axis Title Axis Title<br>0.30 10000 1000 10000<br>Ciss<br>0.24<br>VGS = 4.5 V 1000 100 Coss 1000<br>0.18<br>0.12<br>100 10 100<br>0.06 VGS = 10 V Crss<br>0 10 1 10<br>0 2 4 6 8 0 20 40 60 80 100<br>ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)<br>On-Resistance vs. Drain Current and Gate Voltage Capacitance<br>1st line 2nd line 2nd line<br> - Drain Current (A)ID - Drain Current (A)ID<br>1st line 2nd line 2nd line<br> - On-Resistance (Ω)<br>C - Capacitance (pF)<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [190 x 162] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>ID = 0.2 A<br>8<br>6<br>4<br>VDS = 25 V, 50 V, 80 V<br>2<br>0<br>0 1.1 2.2 3.3 4.4 5.5<br>Qg - Total Gate Charge (nC)<br> - Gate-to-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br> **Gate Charge** **==> picture [210 x 160] intentionally omitted <==** **----- Start of picture text -----**<br> 2.2 10000<br>VGS = 10 V, 2.7 A<br>1.9<br>1.6 1000<br>1.3<br>VGS = 4.5 V, 2.5 A<br>1.0 100<br>0.7<br>0.4 10<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Junction Temperature (°C)<br> - On-Resistance (Normalized)<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [157 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> On-Resistance vs. Junction Temperature<br>**----- End of picture text -----**<br> Document Number: 63046 S23-0133-Rev. B, 13-Mar-2023 **4** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SiS590DN** Vishay Siliconix www.vishay.com ## **N-CHANNEL TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [188 x 157] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>TJ = 150 °C<br>1<br>TJ = 25 °C<br>0.1<br>0.01<br>0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD - Source-to-Drain Voltage (V)<br> - Source Current (A)<br>IS<br>**----- End of picture text -----**<br> **Source-Drain Diode Forward Voltage** **==> picture [188 x 161] intentionally omitted <==** **----- Start of picture text -----**<br> 0.5<br>ID = 2.7 A<br>0.4<br>0.3 TJ = 125 °C<br>0.2<br>TJ = 25 °C<br>0.1<br>0<br>0 2 4 6 8 10<br>VGS - Gate-to-Source Voltage (V)<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **On-Resistance vs. Gate-to-Source Voltage** **==> picture [209 x 160] intentionally omitted <==** **----- Start of picture text -----**<br> 2.3 10000<br>ID = 250 μA<br>2.1<br>1000<br>1.9<br>1.7<br>100<br>1.5<br>1.3 10<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Junction Temperature (°C)<br> (V)<br>GS(th)<br>V<br>**----- End of picture text -----**<br> **==> picture [70 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> Threshold Voltage<br>**----- End of picture text -----**<br> **==> picture [197 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>25<br>20<br>15<br>10<br>5<br>0<br>0.001 0.01 0.1 1 10 100 600<br>Time (s)<br>Single Pulse Power (Junction-to-Ambient)<br>Power (W)<br>**----- End of picture text -----**<br> **==> picture [210 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 10 10000<br>IDM limited<br>100 μs<br>1 1000<br>1 ms<br>10 ms<br>0.1 Limited by R DS(on) a 100<br>100 ms<br>10s, 1s<br>T A = 25 °C,<br>single pulse<br>BVDSS limited DC<br>0.01 10<br>0.1 1 10 100<br>VDS - Drain-to-Source Voltage (V)<br>Safe Operating Area, Junction-to-Ambient<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> ## **Note** a. VGS > minimum VGS at which RDS(on) is specified S23-0133-Rev. B, 13-Mar-2023 Document Number: 63046 **5** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SiS590DN** Vishay Siliconix www.vishay.com ## **N-CHANNEL TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [209 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 8 10000<br>6<br>1000<br>4<br>100<br>2<br>0 10<br>0 25 50 75 100 125 150<br>TC - Case Temperature (°C)<br>Current Derating [a]<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **==> picture [456 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 1.6 10000 22.0<br>1.2 16.5<br>1000<br>0.8 11.0<br>100<br>0.4 5.5<br>0 10 0<br>0 25 50 75 100 125 150 0 25 50 75 100 125 150<br>TC - Case Temperature (°C) TA - Ambient Temperature (°C)<br>Power Junction to Ambient Power Junction to Case<br>1st line 2nd line 2nd line<br>P - Power (W) P - Power (W)<br>**----- End of picture text -----**<br> ## **Note** a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S23-0133-Rev. B, 13-Mar-2023 Document Number: 63046 **6** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SiS590DN** Vishay Siliconix www.vishay.com ## **N-CHANNEL TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [446 x 397] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>1<br>Duty cycle = 0.5<br>0.2<br>Notes:<br>0.1<br>0.1 PDM<br>0.05<br>t 1<br>0.02 1. Duty Cycle, D =t2 tt12<br>2. Per Unit Base = R thJA = 75 °C/W<br>3. T JM - T A = PDMZthJA [(t)]<br>Single pulse 4. Surface Mounted<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10 100 600<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br>2<br>1 Duty cycle = 0.5<br>0.2<br>0.1 0.1<br>0.05<br>0.02<br>Single pulse<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Case<br>Thermal Impedance<br>Normalized Effective Transient<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br> S23-0133-Rev. B, 13-Mar-2023 Document Number: 63046 **7** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SiS590DN** Vishay Siliconix www.vishay.com ## **P-CHANNEL TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [477 x 583] intentionally omitted <==** **----- Start of picture text -----**<br> 10 10000 10 10000<br>TC = -55 °C<br>8 8<br>VGS = 10 V thru 5 V 1000 1000<br>6 6<br>VGS = 4 V TC = 125 °C<br>4 4<br>100 100<br>TC = 25 °C<br>2 2<br>VGS = 3 V<br>0 10 0 10<br>0 1 2 3 4 0 1.5 3 4.5 6<br>VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)<br>Output Characteristics Transfer Characteristics<br>Axis Title Axis Title<br>0.5 10000 1000 10000<br>Ciss<br>0.4<br>VGS = 4.5 V 1000 100 Coss 1000<br>0.3<br>VGS = 10 V<br>0.2<br>100 10 100<br>0.1 Crss<br>0 10 1 10<br>0 2 4 6 8 10 0 20 40 60 80 100<br>ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)<br>On-Resistance vs. Drain Current and Gate Voltage Capacitance<br>Axis Title Axis Title<br>10 10000 2.0 10000<br>ID = 2.3 A VGS = 10 V, 2.3 A<br>8 1.7<br>VDS = 25 V, 50 V, 80 V 1000 1000<br>6 1.4<br>VGS = 4.5 V, 2.0 A<br>4 1.1<br>100 100<br>2 0.8<br>0 10 0.5 10<br>0 3 6 9 12 -50 -25 0 25 50 75 100 125 150<br>Qg- Total Gate Charge (nC) TJ - Junction Temperature (°C)<br>1st line 2nd line 2nd line<br> - Drain Current (A)ID - Drain Current (A)ID<br>1st line 2nd line 2nd line<br> - On-Resistance (Ω)<br>DS(on) C - Capacitance (pF)<br>R<br>1st line 2nd line 2nd line<br> - On-Resistance (Normalized)<br>VGS- Gate-to-Source Voltage (V) DS(on)<br>R<br>**----- End of picture text -----**<br> **Gate Charge** **On-Resistance vs. Junction Temperature** Document Number: 63046 S23-0133-Rev. B, 13-Mar-2023 **8** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SiS590DN** Vishay Siliconix www.vishay.com ## **P-CHANNEL TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [188 x 157] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>TJ = 150 °C<br>1<br>TJ = 25 °C<br>0.1<br>0.01<br>0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD - Source-to-Drain Voltage (V)<br> - Source Current (A)<br>IS<br>**----- End of picture text -----**<br> **Source-Drain Diode Forward Voltage** **==> picture [188 x 161] intentionally omitted <==** **----- Start of picture text -----**<br> 0.8<br>ID = 2.3 A<br>0.6<br>0.4<br>TJ = 125 °C<br>0.2<br>TJ = 25 °C<br>0<br>0 2 4 6 8 10<br>VGS - Gate-to-Source Voltage (V)<br> - On-Resistance (Ω)<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **On-Resistance vs. Gate-to-Source Voltage** **==> picture [209 x 160] intentionally omitted <==** **----- Start of picture text -----**<br> 2.3 10000<br>ID = 250 μA<br>2.1<br>1000<br>1.9<br>1.7<br>100<br>1.5<br>1.3 10<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Junction Temperature (°C)<br> (V)<br>GS(th)<br>V<br>**----- End of picture text -----**<br> **==> picture [70 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> Threshold Voltage<br>**----- End of picture text -----**<br> **==> picture [187 x 153] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>40<br>30<br>20<br>10<br>0<br>0.001 0.01 0.1 1 10 100 600<br>Time (s)<br>Power (W)<br>**----- End of picture text -----**<br> **Single Pulse Power, Junction-to-Ambient** **==> picture [210 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 100 10000<br>IDM limited<br>10<br>100 μs1000<br>1<br>1 ms<br>100<br>0.1 Limited by RDS(on) a 10 ms<br>100 ms<br>T single pulseA = 25 °C, 10s, 1s<br>BVDSS limited DC<br>0.01 10<br>0.1 1 10 100<br>VDS - Drain-to-Source Voltage (V)<br>Safe Operating Area, Junction-to-Ambient<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **Note** a. VGS > minimum VGS at which RDS(on) is specified S23-0133-Rev. B, 13-Mar-2023 Document Number: 63046 **9** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SiS590DN** Vishay Siliconix www.vishay.com ## **P-CHANNEL TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [209 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 8 10000<br>6<br>1000<br>4<br>100<br>2<br>0 10<br>0 25 50 75 100 125 150<br>TC - Case Temperature (°C)<br>Current Derating [a]<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **==> picture [475 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 28 10000 1.6 10000<br>21 1.2<br>1000 1000<br>14 0.8<br>100 100<br>7 0.4<br>0 10 0 10<br>0 25 50 75 100 125 150 0 25 50 75 100 125 150<br>TC - Case Temperature (°C) TA - Ambient Temperature (°C)<br>2nd line 2nd line<br>Power Junction to Ambient Power Junction to Case<br>1st line 2nd line 2nd line<br>Power (W) Power (W)<br>**----- End of picture text -----**<br> ## **Note** a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S23-0133-Rev. B, 13-Mar-2023 Document Number: 63046 **10** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **SiS590DN** Vishay Siliconix www.vishay.com ## **P-CHANNEL TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [438 x 379] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>1<br>Duty cycle = 0.5<br>0.2<br>Notes:<br>0.1<br>0.1 PDM<br>0.05<br>t 1<br>0.02 1. Duty Cycle, D =t2 tt12<br>2. Per Unit Base = R thJA = 94 °C/W<br>3. T JM - TA = PDMZthJA [(t)]<br>Single pulse 4. Surface Mounted<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10 100 600<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br>2<br>1<br>Duty cycle = 0.5<br>0.2<br>0.1<br>0.1 0.05<br>0.02<br>Single pulse<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1<br>Square Wave Pulse Duration (s)<br>Normalized Effective Transient Thermal Impedance<br>Normalized Effective Transient Thermal Impedance<br>**----- End of picture text -----**<br> ## **Normalized Thermal Transient Impedance, Junction-to-Case** _Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63046._ S23-0133-Rev. B, 13-Mar-2023 Document Number: 63046 **11** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Package Information** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **PowerPAK[®] 1212-8, (Single / Dual)** **==> picture [412 x 251] intentionally omitted <==** **----- Start of picture text -----**<br> L<br>H E2 K<br>W E4<br>8<br>1 1<br>Z<br>2<br>2<br>3<br>4 5 4<br>L1 E3<br>A1<br>Backside view of single pad<br>L<br>H E2 K<br>E4<br>H<br>2<br>1<br>E1 Detail Z D1<br>E 2<br>Notes 3<br>1. Inch will govern<br>2 Dimensions exclusive of mold gate burrs D2 4<br>3. Dimensions exclusive of mold flash and cutting burrs<br>E3<br>Backside view of dual pad<br>θ θ<br>θ<br>θ<br>D4<br>M<br>e<br>D1 D D2 D5<br>b<br>A<br>c<br>D4<br>3(2x)<br>D<br>D2 D5<br>K1<br>b<br>**----- End of picture text -----**<br> |**DIM.**|**MILLIMETERS**<br>**INCH**|**MILLIMETERS**<br>**INCH**|**MILLIMETERS**<br>**INCH**| |---|---|---|---| ||**MIN.**|**NOM.**|**MAX.**<br>**MIN.**<br>**NOM**| |A|0.97|1.04|1.12<br>0.038<br>0.04| |A1|0.00|-|0.05<br>0.000<br>-| |b|0.23|0.30|0.41<br>0.009<br>0.01| |c|0.23|0.28|0.33<br>0.009<br>0.01| |D|3.20|3.30|3.40<br>0.126<br>0.13| |D1|2.95|3.05|3.15<br>0.116<br>0.12| |D2|1.98|2.11|2.24<br>0.078<br>0.08| |D3|0.48|-|0.89<br>0.019<br>-| |D4|0.47 typ.<br>0.0185||| |D5|2.3 typ.<br>0.090||| |E|3.20|3.30|3.40<br>0.126<br>0.13| |E1|2.95|3.05|3.15<br>0.116<br>0.12| |E2|1.47|1.60|1.73<br>0.058<br>0.06| |E3|1.75|1.85|1.98<br>0.069<br>0.07| |E4|0.034 typ.<br>0.013||| |e|0.65 BSC<br>0.026||| |K|0.86 typ.<br>0.034||| |K1|0.35|-|-<br>0.014<br>-| |H|0.30|0.41|0.51<br>0.012<br>0.01| |L|0.30|0.43|0.56<br>0.012<br>0.01| |L1|0.06|0.13|0.20<br>0.002<br>0.00| ||0°|-|12°<br>0°<br>-| |W|0.15|0.25|0.36<br>0.006<br>0.01| |M|0.125 typ.<br>0.005||| |ECN: S16-2667-Rev. M, 09-Jan-17<br>DWG: 5882|||| Revison: 09-Jan-17 **1** Document Number: 71656 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **PAD Pattern** www.vishay.com Vishay Siliconix ## **Recommended Land Pattern for PowerPAK[®] 1212-8 Dual** **==> picture [160 x 180] intentionally omitted <==** **==> picture [160 x 180] intentionally omitted <==** **==> picture [285 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> For BW package For BWL package<br>**----- End of picture text -----**<br> **==> picture [239 x 264] intentionally omitted <==** **----- Start of picture text -----**<br> 0.55<br>0.65 x 3 = 1.95<br>0.40 0.65 0.55<br>1.01 0.49<br>0.38<br>0.19 1.13<br>0.65 0.55<br>0.35<br>0.55<br>0.65 x 3 = 1.95<br>0.60<br>1.31<br>0.43<br>0.09<br>1.32 0.67<br>0.76<br>**----- End of picture text -----**<br> Revision: 01-Sep-2020 Document Number: 72598 **1** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Legal Disclaimer Notice** Vishay www.vishay.com ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. _**© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ Revision: 01-Jan-2023 Document Number: 91000 **1**
Updated at June 9, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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