Illustrative purposes only
SIS590DN-T1-GE3
Dual MOSFET, N and P Channel, 100 V, 4 A, 0.197 ohm, PowerPAK 1212, Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 8Pins
- Channel Type: N and P Channel
- Transistor Mounting: Surface Mount
- Transistor Polarity: N and P Channel
- Power Dissipation Pd: 23.1W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.197ohm
- Transistor Case Style: PowerPAK 1212
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 4A
- Power Dissipation N Channel: 23.1W
- Power Dissipation P Channel: 23.1W
- Gate Source Threshold Voltage Max: 2.5V
- Drain Source Voltage Vds N Channel: 100V
- Drain Source Voltage Vds P Channel: 100V
- Continuous Drain Current Id N Channel: 4A
- Continuous Drain Current Id P Channel: 4A
- Drain Source On State Resistance N Channel: 0.197ohm
- Drain Source On State Resistance P Channel: 0.197ohm
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.533 € |
| Current stock | 6010 |
| Lead time | 7 days |
Datasheet
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