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SIS410DN-T1-GE3
Power MOSFET, N Channel, 20 V, 35 A, 4800 µohm, PowerPAK 1212, Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.004ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V; P
- MSL: -
- SVHC: Lead (21-Jan-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 5.2W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: PowerPAK 1212
- Drain Source Voltage Vds: 20V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 35A
- Drain Source On State Resistance: 4800µohm
- Gate Source Threshold Voltage Max: 1.2V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.617 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
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Updated at March 27, 2026