SIL2301-TP

**SIL2301** 

## ~~**Features**~~ 

- Trench LV MOSFET Technology 

- Moisture Sensitivity Level 1 

- Halogen Free. “Green” Device[(Note1)] 

- Epoxy Meets UL 94 V-0 Flammability Rating 

- Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) 

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Dual<br>P-Channel MOSFET<br>**----- End of picture text -----**<br>


## **Maximum Ratings** 

- Operating Junction Temperature Range : -55[o] C to +150[o] C 

- Storage Temperature Range: -55[o] C to +150[o] C 

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SOT23-6L<br>**----- End of picture text -----**<br>


- Thermal Resistance: 100[o] C/W Junction to Ambient[(Note2)] 

|**Parameter**||**Symbol**|**Rating**|**Unit**|
|---|---|---|---|---|
|Drain-Source Voltage||VDS|-20|V|
|Gate-Source Volltage||VGS|±8|V|
|Continuous Drain Current|TA=25°C|ID|-2.3|A|
||TA=100°C||-1.4||
|Pulsed Drain Current(Note3)||IDM|-9.2|A|
|Total Power Dissipation(Note4)||PD|1.25|W|



Note: 

1. Halogen free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

2. The value of RθJA is measured with the device mounted on 1in[2] FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 

3. Repetitive rating; pulse width limited by max. junction temperature. 

4. PD is based on max. junction temperature, using junction-ambient thermal resistance. 

## **Internal Structure and Marking Code** 

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D1 S1 D2 6       5 4<br>6 5 4<br>S1<br>1 2 3<br>G1 S2 G2 1  2 3<br>**----- End of picture text -----**<br>


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G<br>6 5 4<br>B C<br>1  2 3<br>A<br>H<br>K M<br>J<br>D<br>L<br>DIMENSIONS<br>INCHES MM<br>DIM NOTE<br>MIN MAX MIN MAX<br>A 0.012 0.020 0.30 0.50<br>B 0.051 0.070 1.30 1.80<br>C 0.087 0.126 2.20 3.20<br>D 0.037  0.95 TYP.<br>G 0.074 1.90  TYP.<br>H 0.106 0.122 2.70 3.10<br>J 0.002 0.006 0.05 0.15<br>K 0.030 0.051 0.75 1.30<br>L 0.012 0.024 0.30 0.60<br>M 0.003 0.008 0.08 0.22<br>**----- End of picture text -----**<br>


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## **Electrical Characteristics  @ 25°C (Unless Otherwise Specified)** 

|**Parameter**|**Symbol**|**Test   Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|**Static Characteristics**|||||||
|Drain-Source Breakdown Voltage|V(BR)DSS|VGS=0V, ID=-250µA|-20|||V|
|Gate-Source Leakage Current|IGSS|VDS=0V, VGS=±8V|||±100|nA|
|Zero Gate Voltage Drain Current|IDSS|VDS=-20V, VGS=0V|||-1|µA|
|Gate-Threshold Voltage|VGS(th)|VDS=VGS, ID=-250µA|-0.4|-0.7|-1.0|V|
|Drain-Source On-Resistance|RDS(on)|VGS=-4.5V, ID=-2.5A||50|90|mΩ|
|||VGS=-2.5V, ID=-2A||64|125||
|||VGS=-1.8V, ID=-1.6A||110|200||
|Forward Tranconductance|gFS|VDS=-5V,ID=-2.3A||10||S|
|Gate Resistance|Rg|f=1 MHz, Open drain||14||Ω|
|**Diode Characteristics**|||||||
|Continuous Body Diode Current|IS||||-2.3|A|
|Diode Forward Voltage|VSD|VGS=0V, IS=-0.7A|||-1.2|V|
|Reverse Recovery Time|trr|IF=-1.4A,di/dt=100A/μs||16||ns|
|Reverse Recovery Charge|Qrr|||4.7||nC|
|**Dynamic Characteristics**|||||||
|Input Capacitance|Ciss|VDS=-15V,VGS=0V,f=1MHz||480||pF|
|Output Capacitance|Coss|||61|||
|Reverse Transfer Capacitance|Crss|||51|||
|Total Gate Charge|Qg|VDS=-10V,VGS=-4.5V,ID=-1.4A||8||nC|
|Gate-Source Charge|Qgs|||1.4|||
|Gate-Drain Charge|Qgd|||1.6|||
|Turn-On  Delay Time|td(on)|VDD=-10V, VGS=-4.5V,<br>RG=6Ω,  ID=-1.4A||8||ns|
|Turn-On  Rise Time|tr|||9|||
|Turn-Off  Delay Time|td(off)|||26|||
|Turn-Off  Fall Time|tf|||10|||



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## **Curve Characteristics** 

**Fig.1 - Typical Output Characteristics** 

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-30<br>VGS=-4.5V,-4V VGS=-3.5V<br>-25<br>VGS=-3V<br>-20<br>VGS=-2.5V<br>-15<br>-10<br>VGS=-1.8V<br>-5<br>0<br>0 -1 -2 -3 -4 -5<br>Drain To Source Voltage (V)<br>Fig.3 - RDS(ON) - VGS<br>200<br>180 ID=-2.5A<br>160<br>140<br>120<br>100<br>80<br>60<br>40 25℃<br>20<br>0<br>-1.5 -2 -2.5 -3 -3.5 -4 -4.5<br>Gate To Source Voltage (V)<br>Drain Current (A)<br>Drain-Source On-Resistance (mΩ)<br>**----- End of picture text -----**<br>


**Fig.5 - Capacitance Characteristics** 

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1000<br>Ciss<br>100 Coss<br>Crss<br>10<br>0 -5 -10 -15 -20<br>Drain To Source Voltage (V)<br>Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig.2 - Transfer Characteristic** 

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-30<br>VDS=-5V<br>-25<br>-20<br>25℃<br>150℃<br>-15<br>-10<br>-5<br>0<br>0 -1 -2 -3 -4 -5<br>Gate To Source Voltage (V)<br>Drain Current (A)<br>**----- End of picture text -----**<br>


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Fig.4 - RDS(ON) - ID<br>100<br>90<br>80 VGS=-2.5V<br>70<br>60 VGS=-4.5V<br>50<br>40<br>30<br>20<br>10<br>0<br>0 -4 -8 -12 -16<br>Drain Current (A)<br>Drain-Source On-Resistance (mΩ)<br>**----- End of picture text -----**<br>


**Fig.6 - Gate Charge** 

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-4.5<br>-4.0 VIDDS=-1.4A=-10V<br>-3.5<br>-3.0<br>-2.5<br>-2.0<br>-1.5<br>-1.0<br>-0.5<br>0.0<br>0 1 2 3             4 6 7 8<br>Gate Charge(nC)<br>V)<br>（<br>Gate-Source Voltage<br>**----- End of picture text -----**<br>


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## **Curve Characteristics** 

**Fig.7 - Normalized Threshold Voltage** 

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1.4<br>1.2<br>1.0<br>0.8<br>ID=-250µA<br>0.6<br>0.4<br>0.2<br>0.0<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Junction Temperature(℃)<br>VGS(th) - Threshold Voltage Normalized<br>**----- End of picture text -----**<br>


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Fig.9 - IS - VSD<br>-100<br>VGS=0V<br>-10<br>150℃ 25℃<br>-1<br>-0.1<br>0.0 -0.5 -1.0 -1.5<br>Source To Drain Voltage (V)<br>Source Current (A)<br>**----- End of picture text -----**<br>


**Fig.8 - Normalized On Resistance Characteristics** 

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1.6<br>VGS=-4.5V<br>1.4 ID= -2.8A<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Junction Temperature(℃)<br>Fig.10 - Drain Current<br>-2.5<br>-2.0<br>-1.5<br>-1.0<br>-0.5<br>0.0<br>0 25 50 75 100 125 150<br>TA Temperature (℃)<br>Normalized On Resistance<br>Drain Current(A)<br>**----- End of picture text -----**<br>


**Fig.11 - PD Dissipation** 

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1.5<br>1.2<br>0.9<br>0.6<br>0.3<br>0<br>0 25 50            75  100  125 150<br>TA Temperature (°C)<br>Power Dissipation  (W)<br>**----- End of picture text -----**<br>


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## **Curve Characteristics** 

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Fig.12 - Safe Operation Area<br>-100<br>-10 RDS(on) Limited<br>100us<br>1ms<br>-1<br>10ms<br>DC 100ms<br>1s<br>-0.1<br>TJ(MAX)=150 ℃ 10s<br>T A =25°C<br>Single Pulse<br>-0.01<br>-0.1 -1 -10 -100<br>Drain-Source Voltage (V)<br>Fig.13 - Normalized Transient Thermal Impedance<br>10<br>D=Ton/T In descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse<br>T J,PK =T A +P DM .Z θJA .R θJA<br>1 RθJA=100 ° C/W<br>0.1<br>0.01 P DM<br>Single Pulse<br>T ON<br>T<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>Pulse Width(s)<br>Drain Current (A)<br>Thermal Resistance<br>Zth(J-A) Normalized Transient<br>**----- End of picture text -----**<br>


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## **Ordering Information** 

|**Device**|**Packing**|
|---|---|
|Part Number-TP|Tape&Reel:3Kpcs/Reel|



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