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SIHU6N65E-GE3

Power MOSFET, N Channel, 650 V, 7 A, 0.6 ohm, TO-251 (IPAK), Through Hole

  • Manufacturer: VISHAY
  • Product type: Single MOSFETs
  • SVHC: Lead (21-Jan-2025)
  • No. of Pins: 3Pins
  • Channel Type: N Channel
  • Product Range: E Series
  • Qualification: -
  • Power Dissipation: 78W
  • Transistor Mounting: Through Hole
  • Rds(on) Test Voltage: 10V
  • Transistor Case Style: TO-251 (IPAK)
  • Drain Source Voltage Vds: 650V
  • Operating Temperature Max: 150°C
  • Continuous Drain Current Id: 7A
  • Drain Source On State Resistance: 0.6ohm
  • Gate Source Threshold Voltage Max: 4V
Delivery and price
Units per pack 5000
Price 0.527 €
Current stock 50+
Lead time 7 days

Updated at March 27, 2026