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SIHU5N80AE-GE3

Power MOSFET, N Channel, 800 V, 4.4 A, 1.35 ohm, TO-251, Through Hole

  • Manufacturer: VISHAY
  • Product type: Single MOSFETs
  • SVHC: Lead (07-Nov-2024)
  • No. of Pins: 3Pins
  • Channel Type: N Channel
  • Product Range: E
  • Qualification: -
  • Power Dissipation: 62.5W
  • Transistor Mounting: Through Hole
  • Rds(on) Test Voltage: 10V
  • Transistor Case Style: TO-251
  • Drain Source Voltage Vds: 800V
  • Operating Temperature Max: 150°C
  • Continuous Drain Current Id: 4.4A
  • Drain Source On State Resistance: 1.35ohm
  • Gate Source Threshold Voltage Max: 4V
Delivery and price
Units per pack 5000
Price 0.373 €
Current stock 50+
Lead time 7 days

Updated at March 14, 2026