SIHU4N80AE-GE3

Power MOSFET, N Channel, 800 V, 4.1 A, 1.44 ohm, TO-251, Through Hole

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Manufacturer: VISHAY
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:4.1A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Powe
MSL: MSL 1 - Unlimited
SVHC: Lead (07-Nov-2024)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: E
Qualification: -
Power Dissipation: 62.5W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-251
Drain Source Voltage Vds: 800V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 4.1A
Drain Source On State Resistance: 1.44ohm
Gate Source Threshold Voltage Max: 4V

Delivery and price
Units per pack	1000
Price	0.473 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 15, 2026