SIHP7N60E-GE3

Power MOSFET, N Channel, 600 V, 7 A, 0.6 ohm, TO-220AB, Through Hole

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Manufacturer: VISHAY
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power D
MSL: -
SVHC: Lead (21-Jan-2025)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: E
Qualification: -
Power Dissipation: 78W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-220AB
Drain Source Voltage Vds: 600V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 7A
Drain Source On State Resistance: 0.6ohm
Gate Source Threshold Voltage Max: 2V

Delivery and price
Units per pack	5000
Price	0.678 €
Current stock	500+
Lead time	7 days

Datasheet

Updated at March 14, 2026