SIHP21N80AE-GE3

Power MOSFET, N Channel, 800 V, 17.4 A, 0.235 ohm, TO-220AB, Through Hole

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Manufacturer: VISHAY
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:17.4A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.205ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V
SVHC: Lead (07-Nov-2024)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: E
Qualification: -
Power Dissipation: 32W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-220AB
Drain Source Voltage Vds: 800V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 17.4A
Drain Source On State Resistance: 0.235ohm
Gate Source Threshold Voltage Max: 4V

Delivery and price
Units per pack	1000
Price	1.56 €
Current stock	10+
Lead time	7 days

Datasheet

Updated at March 14, 2026