SIHP12N65E-GE3

Power MOSFET, N Channel, 650 V, 12 A, 0.38 ohm, TO-220AB, Through Hole

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Manufacturer: VISHAY
Product type: Single MOSFETs
SVHC: Lead (21-Jan-2025)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: E Series
Qualification: -
Power Dissipation: 156W
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-220AB
Drain Source Voltage Vds: 650V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 12A
Drain Source On State Resistance: 0.38ohm
Gate Source Threshold Voltage Max: 4V

Delivery and price
Units per pack	500
Price	0.879 €
Current stock	50+
Lead time	7 days

Datasheet

Updated at March 27, 2026