SIHH28N60E-T1-GE3

Power MOSFET, N Channel, 600 V, 29 A, 0.098 ohm, PowerPAK, Surface Mount

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Manufacturer: VISHAY
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Po
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: E
Qualification: -
Power Dissipation: 202W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: PowerPAK
Drain Source Voltage Vds: 600V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 29A
Drain Source On State Resistance: 0.098ohm
Gate Source Threshold Voltage Max: 5V

Delivery and price
Units per pack	1000
Price	2.92 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 14, 2026