SIHD3N50D-GE3

Power MOSFET, N Channel, 500 V, 3 A, 3.2 ohm, TO-252 (DPAK), Surface Mount

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Manufacturer: VISHAY
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:500V; On Resistance Rds(on):2.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Diss
MSL: MSL 1 - Unlimited
SVHC: No SVHC (17-Dec-2014)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: D
Qualification: -
Power Dissipation: 104W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-252 (DPAK)
Drain Source Voltage Vds: 500V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 3A
Drain Source On State Resistance: 3.2ohm
Gate Source Threshold Voltage Max: 3V

Delivery and price
Units per pack	100
Price	0.393 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 14, 2026