SIHB35N60EF-GE3

Power MOSFET, N Channel, 600 V, 32 A, 0.097 ohm, TO-263 (D2PAK), Surface Mount

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Manufacturer: VISHAY
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.084ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Powe
MSL: MSL 1 - Unlimited
SVHC: Lead (07-Nov-2024)
No. of Pins: 3Pins
Channel Type: N Channel
Product Range: EF
Qualification: -
Power Dissipation: 250W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-263 (D2PAK)
Drain Source Voltage Vds: 600V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 32A
Drain Source On State Resistance: 0.097ohm
Gate Source Threshold Voltage Max: 4V

Delivery and price
Units per pack	1000
Price	2.31 €
Current stock	10+
Lead time	7 days

Datasheet

Updated at March 14, 2026