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SIHB22N60AEL-GE3
Power MOSFET, N Channel, 600 V, 21 A, 0.18 ohm, TO-263 (D2PAK), Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.155ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:
- SVHC: Lead (07-Nov-2024)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: EL
- Qualification: -
- Power Dissipation: 208W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-263 (D2PAK)
- Drain Source Voltage Vds: 600V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 21A
- Drain Source On State Resistance: 0.18ohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.6 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
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Updated at March 14, 2026