SIDR610DP-T1-GE3

Power MOSFET, N Channel, 200 V, 39.6 A, 0.0319 ohm, PowerPAK SO, Surface Mount

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Manufacturer: VISHAY
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:39.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0239ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; P
MSL: MSL 1 - Unlimited
SVHC: Lead (07-Nov-2024)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: TrenchFET
Qualification: -
Power Dissipation: 125W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: PowerPAK SO
Drain Source Voltage Vds: 200V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 39.6A
Drain Source On State Resistance: 0.0319ohm
Gate Source Threshold Voltage Max: 4V

Delivery and price
Units per pack	1000
Price	1.38 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 27, 2026