Illustrative purposes only
SIDR610DP-T1-GE3
Power MOSFET, N Channel, 200 V, 39.6 A, 0.0239 ohm, PowerPAK SO, Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type: Single MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: TrenchFET
- Power Dissipation: 125W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 125W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.0239ohm
- Transistor Case Style: PowerPAK SO
- Drain Source Voltage Vds: 200V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 39.6A
- Drain Source On State Resistance: 0.0239ohm
- Gate Source Threshold Voltage Max: 4V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 2.18 € |
| Current stock | 5179 |
| Lead time | 7 days |
Datasheet
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