SIDR608DP-T1-RE3

Power MOSFET, N Channel, 45 V, 208 A, 1200 µohm, PowerPAK SO, Surface Mount

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Manufacturer: VISHAY
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:208A; Drain Source Voltage Vds:45V; On Resistance Rds(on):0.001ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:
MSL: MSL 1 - Unlimited
SVHC: Lead (07-Nov-2024)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: TrenchFET
Qualification: -
Power Dissipation: 104W
Transistor Mounting: Surface Mount
Transistor Polarity: N Channel
Power Dissipation Pd: 104W
Rds(on) Test Voltage: 10V
On Resistance Rds(on): 0.001ohm
Transistor Case Style: PowerPAK SO
Drain Source Voltage Vds: 45V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 208A
Drain Source On State Resistance: 1200µohm
Automotive Qualification Standard: -
Gate Source Threshold Voltage Max: 2.3V

Delivery and price
Units per pack	1000
Price	0.836 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 14, 2026