Image not available
Illustrative purposes only
SIA906EDJ-T1-GE3
Dual MOSFET, N Channel, 20 V, 20 V, 4.5 A, 4.5 A, 0.037 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: VISHAY
- Product type: Dual MOSFETs
- Transistor Polarity:Dual N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.037ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (04-Feb-2026)
- No. of Pins: 6Pins
- Channel Type: N Channel
- Product Range: TrenchFET Series
- Qualification: -
- Transistor Case Style: PowerPAK SC-70
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 7.8W
- Power Dissipation P Channel: 7.8W
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 4.5A
- Continuous Drain Current Id P Channel: 4.5A
- Drain Source On State Resistance N Channel: 0.037ohm
- Drain Source On State Resistance P Channel: 0.037ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.172 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
_**Work-In-Progress**_ **SiA906EDJ** Vishay Siliconix www.vishay.com ## **Dual N-Channel 20 V (D-S) MOSFET** ## **FEATURES** **==> picture [204 x 123] intentionally omitted <==** **----- Start of picture text -----**<br> PowerPAK [®] SC-70-6L Dual<br>D1<br>G2 6<br>S2 5<br>4<br>D1<br>m5 @<br>D2<br>1<br>2 S1<br>1 3 G1<br>D2<br>Top View Bottom View<br>205 mm .<br>2.05 mm<br>**----- End of picture text -----**<br> **Marking code:** CC ## **PRODUCT SUMMARY** |**PRODUCT SUMMARY**|**PRODUCT SUMMARY**| |---|---| |VDS(V)|20| |RDS(on)max. () at VGS= 4.5 V|0.046| |RDS(on)max. () at VGS= 2.5 V|0.063| |()<br>Qgtyp. (nC)|3.5| |gtyp. (nC)<br>ID(A)a|4.5| |Configuration|Dual| - TrenchFET[®] power MOSFET - New thermally enhanced PowerPAK[®] SC-70 package - Small footprint area - Low on-resistance - Typical ESD protection 560 V - Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ## **APPLICATIONS** - Load switch for portable applications - High frequency DC/DC converter **==> picture [191 x 104] intentionally omitted <==** **----- Start of picture text -----**<br> D1 D2<br>G1 G2<br>N-Channel MOSFET S1 N-Channel MOSFET S2<br>**----- End of picture text -----**<br> ## **ORDERING INFORMATION** Package PowerPAK SC-70 Lead (Pb)-free and halogen-free SiA906EDJ-T1-GE3 ~~|~~ **ABSOLUTE MAXIMUM RATINGS** (TA = 25 °C, unless otherwise noted) ~~DG~~ **PARAMETER SYMBOL LIMIT UNIT** Drain-source voltage VDS 20 V Gate-source voltage VGS ± 12 ~~ee~~ TC = 25 °C 4.5[a] ~~| PO~~ Continuous drain current (TJ = 150 °C) ~~|~~ TC = 70 °C ID ~~PO~~ 4.5[a] TA = 25 °C 4.5[a, b, c] ~~ES~~ TA = 70 °C 4.1[b, c] A ~~| PO~~ Pulsed drain current IDM 15 ~~eE~~ Continuous source-drain diode current ~~Ee~~ TTCA = 25 °C = 25 °C ~~SF~~ IS 1.6 4.5[b, c][a] TC = 25 °C 7.8 Maximum power dissipation ~~|~~ TC = 70 °C ~~sd~~ PD ~~PO~~ 5 W TA = 25 °C 1.9[b, c] ~~| PO Se~~ TA = 70 °C 1.2[b, c] ~~eeet~~ SolderinOperatingg recommendations junction and storag(pe temeak temperature ranperature)g[d, e] e TJ ~~ee~~ , Tstg -55 to +150260 °C **THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT** Maximum junction-to-ambient[b, f] t 5 s RthJA 52 65 °C/W Maximum junction-to-case (drain) Steady state RthJC 12.5 16 ## **Notes** - a. Package limited - b. Surface mounted on 1" x 1" FR4 board c. t = 5 s - d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection - e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components - f. Maximum under steady state conditions is 110 °C/W SPending-Rev. B, 01-Oct-10 Document Number: 69067 **1** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 _**Work-In-Progress**_ **SiA906EDJ** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com |**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)|**SPECIFICATIONS**(TJ= 25 °C,unless otherwise noted)||||| |---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**| |**Static**||||||| |Drain-source breakdown voltage|VDS|VGS= 0 V, ID= 250 μA|20|-|-|V| |VDStemperature coefficient|VDS/TJ|ID= 250 μA|-|23|-|mV/°C| |VGS(th)temperature coefficient|VGS(th)/TJ||-|-3.3|-|| |Gate-source threshold voltage|VGS(th)|VDS= VGS, ID= 250 μA|0.6|-|1.4|V| |Gate-source leakage|IGSS|VDS= 0 V, VGS= ± 12 V|-|-|± 8|μA| |Zero gate voltage drain current|IDSS|VDS= 20 V, VGS= 0 V|-|-|-1|| |||VDS= 20 V, VGS= 0 V, TJ= 55 °C|-|-|-10|| |On-state drain currenta|ID(on)|VDS5 V, VGS= 4.5 V|10|-|-|A| |Drain-source on-state resistancea|RDS(on)|VGS= 4.5 V, ID= 3.9 A|-|0.037|0.046|| |||VGS= 2.5 V, ID= 3.3 A|-|0.051|0.063|| |Forward transconductancea|gfs|VDS= 10 V, ID= 3.9 A|-|14|-|S| |**Dynamicb**||||||| |Input capacitance|Ciss|VDS= 10 V, VGS= 0 V, f = 1 MHz|-|350|-|pF| |Output capacitance|Coss||-|63|-|| |Reverse transfer capacitance|Crss||-|37|-|| |Total gate charge|Qg|VDS= 10 V, VGS= 10 V, ID= 5.1 A|-|7.5|12|nC| |||VDS= 10 V, VGS= 4.5 V, ID= 5.1 A|-|3.5|5.5|| |Gate-source charge|Qgs||-|0.95|-|| |Gate-drain charge|Qgd||-|0.75|-|| |Gate resistance|Rg|f = 1 MHz|0.7|3.5|7|| |Turn-on delay time|td(on)|VDD= 10 V, RL= 2.4<br>ID 4.1 A, VGEN= 4.5 V, Rg= 1|-|10|15|ns| |Rise time|tr||-|12|20|| |Turn-off delay time|td(off)||-|18|30|| |Fall time|tf||-|12|20|| |Turn-on delay time|td(on)|VDD= 10 V, RL= 2.4<br>ID 4.1 A, VGEN= 10 V, Rg= 1|-|5|10|| |Rise time|tr||-|12|20|| |Turn-off delay time|td(off)||-|15|25|| |Fall time|tf||-|10|15|| |**Drain-Source Body Diode Characteristics**||||||| |Continuous source-drain diode current|IS|TC= 25 °C|-|-|4.5|A| |Pulse diode forward current|ISM||-|-|15|| |Body diode voltage|VSD|IS= 4.1 A, VGS= 0 V|-|0.8|1.2|V| |Body diode reverse recovery time|trr|IF= 4.1 A, di/dt = 100 A/μs,<br>TJ= 25 °C|-|15|30|ns| |Body diode reverse recovery charge|Qrr||-|8|20|nC| |Reverse recovery fall time|ta||-|8|-|ns| |Reverse recovery rise time|tb||-|7|-|| ## **Notes** a. Pulse test; pulse width 300 μs, duty cycle 2 % b. Guaranteed by design, not subject to production testing _Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability._ SPending-Rev. B, 01-Oct-10 Document Number: 69067 **2** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 _**Work-In-Progress**_ **SiA906EDJ** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## Vishay Siliconix ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [202 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 4<br>3<br>2<br>IGSS at 25 °C<br>1<br>0<br>0 3 6 9 12 15 18<br>VGS - Gate-to-Source Voltage (V)<br>- Gate Current (mA)<br>I GSS<br>**----- End of picture text -----**<br> ## **Gate Current vs. Gate-Source Voltage** **==> picture [212 x 391] intentionally omitted <==** **----- Start of picture text -----**<br> 15<br>VGS = 5 V thru 3 V<br>VGS = 2.5 V<br>12<br>9<br>6<br>VGS = 2 V<br>3<br>VGS = 1.5 V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>VDS - Drain-to-Source Voltage (V)<br>Output Characteristics<br>0.12<br>0.09<br>VGS = 2.5 V<br>0.06<br>VGS = 4.5 V<br>0.03<br>0.00<br>0 3 6 9 12 15<br>ID - Drain Current (A)<br>On-Resistance vs. Drain Current and Gate Voltage<br>- Drain Current (A)<br>I D<br>)Ω<br>- On-Resistance (<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [205 x 592] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [-2]<br>10 [-3]<br>10 [-4]<br>10 [-5]<br>TJ = 150 °C<br>10 [-6]<br>10 [-7] TJ = 25 °C<br>10 [-8]<br>10 [-9]<br>10 [-10]<br>0 3 6 9 12 15 18<br>VGS - Gate-to-Source Voltage (V)<br>Gate Current vs. Gate-Source Voltage<br>5<br>4<br>TC = - 55 °C<br>3<br>2<br>TC = 25 °C<br>1<br>TC = 125 °C<br>0<br>0.0 0.5 1.0 1.5 2.0<br>VGS - Gate-to-Source Voltage (V)<br>Transfer Characteristics<br>500<br>400 Ciss<br>300<br>200<br>Coss<br>100<br>Crss<br>0<br>0 2 4 6 8 10 12 14 16 18 20<br>VDS - Drain-to-Source Voltage (V)<br>Capacitance<br>- Gate Current (A)<br>I GSS<br>- Drain Current (A)<br>I D<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br> SPending-Rev. B, 01-Oct-10 Document Number: 69067 **3** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 _**Work-In-Progress**_ **SiA906EDJ** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## Vishay Siliconix ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [205 x 377] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>ID = 5.1 A<br>8<br>VDS = 10 V<br>6<br>VDS = 16 V<br>4<br>2<br>0<br>0 2 4 6 8<br>Qg - Total Gate Charge (nC)<br>Gate Charge<br>100<br>10<br>T J = 150 °C<br>TJ = 25 °C<br>1<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD - Source-to-Drain Voltage (V)<br>- Gate-to-Source Voltage (V)<br>GS<br>V<br>- Source Current (A)<br>I S<br>**----- End of picture text -----**<br> ## **Source-Drain Diode Forward Voltage** **==> picture [204 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> 1.3<br>1.2<br>1.1 I D = 250 µA<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>- 50 - 25 0 25 50 75 100 125 150<br>TJ - Temperature (°C)<br>Threshold Voltage<br>(V)<br>GS(th)<br>V<br>**----- End of picture text -----**<br> **==> picture [208 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 1.7<br>ID = 3.9 A<br>1.5<br>1.3<br>VGS = 4.5 V, 2.5 V<br>1.1<br>0.9<br>0.7<br>0.5<br>- 50 - 25 0 25 50 75 100 125 150<br>TJ - Junction Temperature (°C)<br>- On-Resistance<br>(Normalized)<br>DS(on)<br>R<br>**----- End of picture text -----**<br> ## **On-Resistance vs. Junction Temperature** **==> picture [209 x 390] intentionally omitted <==** **----- Start of picture text -----**<br> 0.20<br>ID = 2 A<br>0.16<br>0.12<br>0.08<br>TJ = 125 °C<br>0.04<br>TJ = 25 °C<br>0.00<br>0 1 2 3 4 5<br>VGS - Gate-to-Source Voltage (V)<br>On-Resistance vs. Gate-to-Source Voltage<br>20<br>15<br>10<br>5<br>0<br>0.001 0.01 0.1 1 10 100 1000<br>Pulse (s)<br>Single Pulse Power (Junction-to-Ambient)<br>)Ω<br>- On-Resistance (<br>DS(on)<br>R<br>Power (W)<br>**----- End of picture text -----**<br> SPending-Rev. B, 01-Oct-10 Document Number: 69067 **4** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 _**Work-In-Progress**_ **SiA906EDJ** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [191 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>Limited by RDS(on) *<br>10<br>100 µA<br>1<br>1 ms<br>10 ms<br>100 ms<br>0.1 10 s, 1 s<br>TA = 25 °C DC<br>Single Pulse<br>BVDSS Limited<br>0.01<br>0.1 1 10 100<br>VDS - Drain-to-Source Voltage (V)<br>* VGS > minimum VGS at which RDS(on) is specified<br>Drain Current (A)<br>-<br>ID<br>**----- End of picture text -----**<br> **Safe Operating Area, Junction-to-Ambient** **==> picture [455 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> 12 8<br>10<br>6<br>8<br>6 4<br>Package Limited<br>4<br>2<br>2<br>0 0<br>0 25 50 75 100 125 150 25 50 75 100 125 150<br>TC - Case Temperature (°C) TC - Case Temperature (°C)<br>Current Derating [a] Power Derating<br>Drain Current (A)<br>-<br>I D Power Dissipation (W)<br>**----- End of picture text -----**<br> ## **Note** a. The power dissipation PD is based on TJ max = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit SPending-Rev. B, 01-Oct-10 Document Number: 69067 **5** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 _**Work-In-Progress**_ **SiA906EDJ** Vishay Siliconix **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## **TYPICAL CHARACTERISTICS** (25 °C, unless otherwise noted) **==> picture [447 x 387] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>Duty Cycle = 0.5<br>0.2<br>0.1<br>Notes:<br>0.1 0.05 P DM<br>0.02 t 1<br>1. Duty Cycle, D =t 2 tt12<br>2. Per Unit Base = R thJA = 85 °C/W<br>Single Pulse 3. T JM - TA = PDMZthJA [(t)]<br>4. Surface Mounted<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10 100 1000<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Ambient<br> 1<br>Duty Cycle = 0.5<br>0.2<br>0.1<br>0.05<br>0.02<br>Single Pulse<br>0.01<br>10 [-4] 10 [-3] 10 [-2] 10 [-1]<br>Square Wave Pulse Duration (s)<br>Normalized Thermal Transient Impedance, Junction-to-Foot<br>Thermal Impedance<br>Normalized Effective Transient<br>Thermal Impedance<br>Normalized Effective Transient<br>**----- End of picture text -----**<br> _Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69067._ SPending-Rev. B, 01-Oct-10 Document Number: 69067 **6** For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **==> picture [59 x 49] intentionally omitted <==** ## **PowerPAK**[®] **SC70-6L** ## **Package Information** ## Vishay Siliconix **==> picture [380 x 355] intentionally omitted <==** **----- Start of picture text -----**<br> e b e b<br>PIN1 PIN2 PIN3 PIN1 PIN2 PIN3<br>D2 D1 D1<br>D1<br>PIN6 PIN5 PIN4 PIN6 PIN5 PIN4<br>K3 K1 K2 K2 K1 K2<br>BACKSIDE VIEW OF SINGLE BACKSIDE VIEW OF DUAL<br>D A<br>Notes:<br>1. All dimensions are in millimeters<br>2. Package outline exclusive of mold flash and metal burr<br>3. Package outline inclusive of plating<br>Z<br>z<br>DETAIL Z<br>L L<br>K4 K<br>E2<br>E1 E1 E1<br>E3<br>K K<br>E<br>C A1<br>**----- End of picture text -----**<br> |**DIM**|**SINGLE PAD**|**SINGLE PAD**|**SINGLE PAD**|**SINGLE PAD**|**SINGLE PAD**|**SINGLE PAD**|**DUAL PAD**|**DUAL PAD**|**DUAL PAD**|**DUAL PAD**|**DUAL PAD**|**DUAL PAD**| |---|---|---|---|---|---|---|---|---|---|---|---|---| ||**MILLIMETERS**|||**INCHES**|||**MILLIMETERS**|||**INCHES**||| ||**Min**|**Nom**|**Max**|**Min**<br>|**Nom**|**Max**|**Min**|**Nom**|**Max**|**Min**|**Nom**|**Max**| |**A**|0.675|0.75|0.80|0.027<br>|0.030|0.032|0.675|0.75|0.80|0.027|0.030|0.032| |**A1**|0|-|0.05|0|-|0.002|0|-|0.05|0|-|0.002| |**b**|0.23|0.30|0.38|0.009<br>|0.012|0.015|0.23|0.30|0.38|0.009|0.012|0.015| |**C**|0.15|0.20|0.25|0.006<br>|0.008|0.010|0.15|0.20|0.25|0.006|0.008|0.010| |**D**|1.98|2.05|2.15|0.078<br>|0.081|0.085|1.98|2.05|2.15|0.078|0.081|0.085| |**D1**|0.85|0.95|1.05|0.033<br>|0.037|0.041|0.513|0.613|0.713|0.020|0.024|0.028| |**D2**|0.135|0.235|0.335|0.005<br>|0.009|0.013||||||| |**E**|1.98|2.05|2.15|0.078<br>|0.081|0.085|1.98|2.05|2.15|0.078|0.081|0.085| |**E1**|1.40|1.50|1.60|0.055<br>|0.059|0.063|0.85|0.95|1.05|0.033|0.037|0.041| |**E2**|0.345|0.395|0.445|0.014<br>|0.016|0.018||||||| |**E3**|0.425|0.475|0.525|0.017<br>|0.019|0.021||||||| |**e**|0.65 BSC|||0.026 BSC|||0.65 BSC|||0.026 BSC||| |**K**|0.275 TYP|||0.011 TYP|||0.275 TYP|||0.011 TYP||| |**K1**|0.400 TYP|||0.016 TYP|||0.320 TYP|||0.013 TYP||| |**K2**|0.240 TYP|||0.009 TYP|||0.252 TYP|||0.010 TYP||| |**K3**|0.225 TYP|||0.009 TYP||||||||| |**K4**|0.355 TYP|||0.014 TYP||||||||| |**L**|0.175|0.275|0.375|0.007<br>|0.011|0.015|0.175|0.275|0.375|0.007|0.011|0.015| |**T**|||||||0.05|0.10|0.15|0.002|0.004|0.006| |ECN: C-07431−Rev. C, 06-Aug-07<br>DWG: 5934||||||||||||| ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 **Application Note 826** Vishay Siliconix **==> picture [59 x 50] intentionally omitted <==** ## **RECOMMENDED PAD LAYOUT FOR PowerPAK[®] SC70-6L Dual** ## **==> picture [430 x 400] intentionally omitted <==** **----- Start of picture text -----**<br> 2.500 (0.098)<br>0.300 (0.012) 0.350 (0.014)<br>0.325 (0.013)<br>0.275 (0.011)<br>0.613 (0.024)<br>2.500 (0.098) 0.950 (0.037)<br>0.475 (0.019)<br>0.160 (0.006)<br>0.275 (0.011)<br>1 0.650 (0.026)<br>1.600 (0.063)<br>Dimensions in mm (inches)<br>Return to Index<br>**----- End of picture text -----**<br> www.vishay.com 1 Document Number: 70487 Revision: 18-Oct-13 **Legal Disclaimer Notice** Vishay www.vishay.com ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. _**© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED**_ Revision: 01-Jan-2022 Document Number: 91000 **1**
Updated at June 9, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 540,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →