SIA517DJ-T1-GE3

Dual MOSFET, Complementary N and P Channel, 12 V, 12 V, 4.5 A, 4.5 A, 0.024 ohm

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Manufacturer: VISHAY
Product type: Dual MOSFETs
Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Volt
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 6Pins
Channel Type: Complementary N and P Channel
Product Range: TrenchFET Series
Qualification: -
Transistor Case Style: PowerPAK SC-70
Operating Temperature Max: 150°C
Power Dissipation N Channel: 6.5W
Power Dissipation P Channel: 6.5W
Drain Source Voltage Vds N Channel: 12V
Drain Source Voltage Vds P Channel: 12V
Continuous Drain Current Id N Channel: 4.5A
Continuous Drain Current Id P Channel: 4.5A
Drain Source On State Resistance N Channel: 0.024ohm
Drain Source On State Resistance P Channel: 0.024ohm

Delivery and price
Units per pack	1500
Price	0.318 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 23, 2026